2021
DOI: 10.1016/j.optmat.2020.110565
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Theoretical evidence of high power conversion efficiency in double perovskite solar cell device

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Cited by 64 publications
(42 citation statements)
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“…39 This can be because of the superiority of carrier recombination along with the presence of parasitic resistance losses. 40 The PCE increased initially with the thickness and reached a maximum value of 21.21% at 1000 nm, which was chosen as the final optimum absorber thickness. Then it declined with a further enhancement in the absorber thickness.…”
Section: Simulated Parametersmentioning
confidence: 99%
“…39 This can be because of the superiority of carrier recombination along with the presence of parasitic resistance losses. 40 The PCE increased initially with the thickness and reached a maximum value of 21.21% at 1000 nm, which was chosen as the final optimum absorber thickness. Then it declined with a further enhancement in the absorber thickness.…”
Section: Simulated Parametersmentioning
confidence: 99%
“…This is due to the inherent volatile nature of the organic counterpart in perovskite materials used as absorber layer in PSCs. [ 35 ] However, this study uses different inorganic Cs containing halide perovskites and hence it becomes necessary to analyze the photovoltaic performance stability of the device configuration with increase in temperature. With this view, the operating temperature of the device configurations under study is varied from 300 to 500 K. The results are shown in Figure .…”
Section: Resultsmentioning
confidence: 99%
“…However, typically hole confirm lesser diffusion length on account of higher effective mass but generally in the simulation studies, it has been neglected due to very little variation in device output and adopted same diffusion length for both electron and hole. [49][50][51][52][53] The device architecture FTO/TiO 2 /MASnI 3 /Spiro-OMeTAD/Au is used for this study as shown in Figure 1A along with the energy band diagram and grading of energy parameters in Figure 1B,C, respectively. The TiO 2 as electron transport layer (ETL) is chosen after the optimization of different ETLs.…”
Section: Device Configuration and Simulation Methodologymentioning
confidence: 99%
“…In the present simulation, all the electrical and physical parameters are collected from previous reported studies, as listed in the Table 1. 22,46,50,[53][54][55][56][57][58][59][60][61] The interfacial contact between ETL/absorber and absorber/HTL play very crucial role in the PSCs. Two defect states such as TiO 2 / MASnI 3 and MASnI 3 /Spiro-OMeTAD are taken into consideration to understand the carrier recombination and tabulated in Table 2.…”
Section: Device Configuration and Simulation Methodologymentioning
confidence: 99%
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