Theoretical calculations of mobility enhancement in strained silicon

Dziekan, Thomas; Zahn, Peter; Meded, Velimir; Mirbt, Susanne

doi:10.1103/physrevb.75.195213

Cited by 25 publications

(27 citation statements)

References 23 publications

(33 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The importance of strain engineering in Si devices has also stimulated many theoretical studies. [12][13][14][15][16][17][18][19][20][21][22][23] However, our understanding of the strain effect on carrier mobility in Si is still far from complete. The theoretical calculation of carrier mobility requires the knowledge of accurate electronic band structures.…”

Section: Introductionmentioning

confidence: 99%

“…Current methods of calculating band structures in strained systems include the k • p method, [13][14][15][16][17][18] tight-binding ͑TB͒, 19,20 empirical pseudopotential ͑EPM͒ ͑Ref. 21͒, and first-principles quantum mechanics 22,23 methods. The carrier mobilities are usually calculated by using the band structures obtained from the semiempirical methods, with good efficiency but poor accuracy.…”

Section: Introductionmentioning

confidence: 99%

“…The carrier mobilities are usually calculated by using the band structures obtained from the semiempirical methods, with good efficiency but poor accuracy. Recently, Dziekan et al 23 attempted to combine more accurate first-principles band structures with Boltzmann transport equations to calculate the electron mobility in strained Si based on a constant relaxation-time approximation.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility

2008

View full text Add to dashboard Cite

Using first-principles method, we calculate the electronic band structure of biaxially strained silicon, from which we analyze the change in electron and hole effective mass as a function of strain and determine the mobility of electrons and holes in the biaxially strained silicon based on Boltzmann transport theory. We found that electron mobility increases with tensile strain and decreases with compressive strain. Such changes are mainly caused by a strain-induced change in electron effective mass, while the suppression of intervalley scattering plays a minor role. On the other hand, the hole mobility increases with both signs of strain and the effect is more significant for compressive strain because the hole effective mass decreases with compressive strain but increases with tensile strain. The strain-induced suppression of interband and intraband scatterings plays also an important role in changing the hole mobility.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility

2008

View full text Add to dashboard Cite

show abstract

“…Thus, the 2S-doped QW with symmetric bent band has much higher mobility than the 1S-doped counterpart with asymmetric band. It is worth mentioning that with the help of the previous methods for structural modulation, [40][41][42][43][44] the enhancement is rather low: Q . 2.…”

Section: Mobility Enhancementmentioning

confidence: 98%

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

et al. 2011

View full text Add to dashboard Cite

We presented a theoretical study of the effects from two-side (2S) doing on low-temperature lateral transport in square quantum wells (QWs). Within a variational approach, we obtained analytic expressions for the carrier distribution, screening function, and autocorrelation functions for various scattering mechanisms. We found that the mobility of a 2S-doped square QW is larger than that of the one-side (1S) doped counter part for scattering from both interfaces or from the top interface. However, the former is smaller than the latter for scattering from the bottom (substrate-side) interface. The mobility of a 2S-doped square QW exhibits a well-width evolution slower than the power-of-six law characteristic of the undoped QW. The mobility may be enhanced by 2S doping. We examine the dependence of the enhancement factor on QW parameters for optimization of the structure. This factor may achieve an order of magnitude, which is much larger than that provided by earlier methods. Our theory is able to reproduce recent experimental data on transport in 2S-doped narrow square QWs, e.g., the mobility dependence on well width and the enhancement factor, which have not been explained so far.

show abstract

“…1,2 The most typical example of nanostructures with localized strains is strain-induced/self-assembled quantum dots ͑QDs͒, 3,4 whose energy band gap is affected severely by lattice-mismatch strain. 1,2 The most typical example of nanostructures with localized strains is strain-induced/self-assembled quantum dots ͑QDs͒, 3,4 whose energy band gap is affected severely by lattice-mismatch strain.…”

Section: Introductionmentioning

confidence: 99%

Direct-to-indirect transition observed in quantum dot photoluminescence with nanoprobe indentation

Ozasa

Maeda

Hara

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inFurther insight into the temperature quenching of photoluminescence from In As ∕ Ga As self-assembled quantum dots J. Appl. Phys. 103, 083548 (2008); 10.1063/1.2913179Temperature dependence of the photoluminescence properties of self-assembled In Ga As ∕ Ga As single quantum dot Suppression of the photoluminescence quenching effect in self-assembled In As ∕ Ga As quantum dots Photoluminescence ͑PL͒ of InGaAs/ GaAs quantum dots ͑QDs͒ is found to be enhanced and then quenched by localized-strain effects induced by the indentation of a nanoprobe. By using a nanoprobe with a flat cylindrical apex of 600 nm in radius, the quench of individual fine PL peaks originating from single QDs was analyzed to obtain the relation between the QD location relative to the nanoprobe and the indentation force required to quench the PL. By analyzing direct-to-indirect transition in the band lineup of the QDs and surrounding GaAs matrix through numerical simulation, the authors concluded that the PL quench should be attributed to the crossover of the ⌫ band of InGaAs and the X band of InGaAs. The bowing parameter of the InGaAs X band of 1050Ϯ 50 meV was deduced by fitting the simulation result to the experimental data.

show abstract

Theoretical calculations of mobility enhancement in strained silicon

Cited by 25 publications

References 23 publications

First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility

First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility

Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

Direct-to-indirect transition observed in quantum dot photoluminescence with nanoprobe indentation

Contact Info

Product

Resources

About