Theoretical and numerical investigation of SiC JFET and MOSFET at 6.5 kV

Mihaila, A.; Udrea, F.; Azar, R.; Liang, Jing; Amaratunga, Gaj; Rusu, Ana; Brezeanu, Gheorghe

doi:10.1109/smicnd.1999.810460

Cited by 4 publications

(1 citation statement)

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“…The normally-on SiC-JFET samples used in this paper were supplied by SiCED in Germany that is now a part of Infineon Technologies. At the start of the project, the variability of the SiC devices was a major concern [13]. In order to assess their quality, statistical analysis was done.…”

Section: Introductionmentioning

confidence: 99%

PMSM drive using silicon carbide inverter: Design, development and testing at elevated temperature

Singh

Pilli

Guedon³

et al. 2015

2015 IEEE International Conference on Industrial Technology (ICIT)

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With the development in silicon carbide (SiC) power device technology, the prospects of SiC to replace silicon (Si) in HEVs are increasing. Through this paper the authors have tried to highlight the practical challenges associated with the thermal aspect and switching EMI of SiC inverter. To assess the quality of upcoming devices, a statistical analysis of the normally-on SiC JFETs is performed. Experimentally the SiC devices in a voltage source inverter (VSI) topology are exploited to operate at higher case temperature of 105 • C. Instead using additional Schottky diodes across the SiC devices, the intrinsic PiN body diodes are utilised, reducing the number of components. The size and cost of the SiC inverter is reduced by removing the LC filter at the output stage of the VSI driving a permanent magnet synchronous machine (PMSM).

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Section: Introductionmentioning

confidence: 99%