Theoretical and Experimental Study of High-Speed Small-Signal Cross-Gain Modulation of Quantum-Dot Semiconductor Optical Amplifiers

Kim, Jungho; Laemmlin, M.; Meuer, C.; Bimberg, D.; Eisenstein, G.

doi:10.1109/jqe.2008.2010881

Cited by 103 publications

(71 citation statements)

References 25 publications

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“…In the past, models without spatial resolution have been employed for the description of semiconductor amplifiers [BER03b,KUN08,ERN09a,KIM09a]. As soon as strong spatial inhomogeneities arise, such models are, however, bound to fail.…”

Section: Quantum-dot Semiconductor Optical Amplifier Modelmentioning

confidence: 99%

“…In general there exist two appropriate modeling approaches: the deterministic description of the ASE power spectral density in frequency space [MEU08a,KIM09a] and the stochastic description in time-domain [MEL08,ROS11c]. Here, we will employ the stochastic description, which simplifies the inclusion of time-varying input signals.…”

Section: Modeling Of Spontaneous Emissionmentioning

confidence: 99%

“…When a linear amplification of the input signal is required, the flat section of the gain characteristics should extend towards as high input power as possible, leading to a distortion-free amplification of arbitrarily strong optical signals [LAE06a]. On the other hand, optical signals with powers in the nonlinear regime induce a nonlinear response of the amplifier, which can be used, e.g., for wavelength conversion via four-wave-mixing [AKI02,QAS04,MAJ11a,SCH12e] or cross-gain-modulation [KIM09a,MEU10].…”

Section: Gain Saturationmentioning

confidence: 99%

“…Here, a linear amplification with a low noise figure is required, to ensure low distortion of the input signal [AKI03,BER04,USK05]. On the other hand, nonlinear optical applications, such as four-wave-mixing [AKI02,QAS04,MAJ11a,SCH12e] and cross-gain modulation [KIM09a,MEU10,CON10] for wavelength conversion, as well as regenerative amplification, require a nonlinear response of the optical amplifier. In the nonlinear amplification regime the amplifier response is input-power dependent and will thus lead to signal distortions, which can be utilized, e.g., for pulse shaping…”

Section: Introductionmentioning

confidence: 99%

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Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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In this thesis the dynamics and performance of optoelectronic devices based on semiconductor quantum-dots are investigated.In the first part, the dynamics of quantum-dot lasers under external perturbations is discussed. Using a microscopically based balance equation model that incorporates detailed charge-carrier scattering dynamics and the possibility to describe nonequilibrium between intra-band electronic states, the relaxation oscillations of the quantum-dot laser are investigated. Three qualitatively different dynamic regimes are identified in dependence of the scattering rates -the "constantreservoir" regime for slow scattering, the "overdamped" regime, and the "synchronized" regime for high scattering -characterized by a varying degree of nonequilibrium between the quantum-dot and reservoir states.Important differences to conventional lasers are found in the modulation response and the dynamics in optical injection and feedback setups. Common theoretical models and approaches used to describe these applications are shown to yield inaccurate predictions, especially in the "constant-reservoir" and "overdamped" dynamic regimes. An important consequence is that the amplitude-phase coupling in quantum-dot lasers, commonly described by the α-factor, differs from conventional descriptions due to the desynchronization of gain and refractive index. While the α-factor describes bifurcations of fixed points accurately, it fails in describing dynamic solutions and overestimates the extent of complex dynamics. The observed low sensitivity to optical perturbations in quantum-dot lasers can therefore be attributed partly to the charge-carrier nonequilibrium. Three quantum-dot laser models on different levels of sophistication are presented that can accurately describe the quantum-dot nonequilibrium dynamics.In the second part of the thesis, the performance of quantum-dot semiconductor optical amplifiers is investigated, and two types of applications unique to quantum-dots as active medium are discussed. The ground and excited states of the quantum-dots allow an ultra-broad-band amplification of optical data streams. Amplified signals on the ground-state frequencies are shown to generally exhibit higher quality than on the excited state, due to a lower sensitivity of the groundstate to carrier-density variations. Nevertheless the quantum-dot amplifier is found to allow effective amplification on both frequency ranges. Furthermore, a parameter range is identified that allows for a simultaneous amplification of data signals on the ground and excited state in a counter-propagating setup.The long microscopically polarization dephasing times in quantum-dots are found to enable quantum-coherent interactions on a macroscopic scale at room-temperature. By comparison with experiments, the occurrence of Rabi-oscillations by amplification of ultra-short pulses is demonstrated. Quantum-dot based devices could therefore be used for future applications based on quantum-coherent effects.

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Section: Quantum-dot Semiconductor Optical Amplifier Modelmentioning

confidence: 99%

Section: Modeling Of Spontaneous Emissionmentioning

confidence: 99%

Section: Gain Saturationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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“…It is determined by electrons, because of the much larger effective mass of holes and their smaller state spacing Berg (2004a). Recently, an attempt has been carried out to take into account the hole dynamics for small-signal XGM case Kim (2009).…”

Section: Basic Equations Of Qd Soa Dynamicsmentioning

confidence: 99%

New Approach to Ultra-Fast All-Optical Signal Processing Based on Quantum Dot Devices

Ezra¹,

Lembrikov²

2010

Semiconductor Technologies

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A simple and accurate dynamical modeling of quantum‐dot semiconductor optical amplifiers

Taleb

Abedi

Golmohammadi

2013

Int J Numerical Modelling

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SUMMARY In this article, quantum‐dot semiconductor optical amplifiers (QD‐SOAs) have been modelled using state space method. To derive this model, we have manipulated the rate equation model of the QD‐SOA, where the average values of the occupation probabilities along the QD‐SOA cavity are considered as the state variables of the system. Using these variables, the distance dependence of the rate equations is eliminated. The derived state space model gives the optical gain and output signal of the amplifier with a high accuracy. Simulation results show that the derived model is not only much simpler and faster than conventional rate equation models, but also the optical gain and output signal of the investigated QD‐SOA are calculated with a higher precision compared to the rate equation model. Copyright © 2013 John Wiley & Sons, Ltd.

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Theoretical and Experimental Study of High-Speed Small-Signal Cross-Gain Modulation of Quantum-Dot Semiconductor Optical Amplifiers

Cited by 103 publications

References 25 publications

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

New Approach to Ultra-Fast All-Optical Signal Processing Based on Quantum Dot Devices

A simple and accurate dynamical modeling of quantum‐dot semiconductor optical amplifiers

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