Theoretical and experimental study of ScAlN/Sapphire structure based SAW sensor

Bartoli, Florian; Moutaouekkil, Mohammed; Streque, Jérémy; Pigeat, P.; Hage-Ali, Sami; Boulet, Pascal; M'Jahed, Hamid; Elmazria, O.; Zhgoon, Sergei; Aubert, Thierry; Matar, Olivier Bou; Talbi, Abdelkrim

doi:10.1109/icsens.2017.8233938

Cited by 10 publications

(5 citation statements)

References 12 publications

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“…In summary, we observed a significant improvement in the insertion loss at the 60 • inclined Sc 0.375 Al 0.625 N SAW delay line compared to the pure AlN SAW delay line. The same improvement was observed experimentally by A. Kochar et al [26,30]. Moreover, the passing frequency band of the SAW delay line based on 60 • inclined pure AlN is shifted down to the low frequencies compared to Sc 0.375 Al 0.625 N at the same angle.…”

Section: Analysis Of Surface Phononic Modes In the Saw-pncssupporting

confidence: 84%

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Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (ScxAl1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

Arab¹,

Kanouni²,

Serhane

et al. 2022

Crystals

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Within the framework of the Density Functional Theory, the elastic, dielectric, and piezoelectric coefficients of w-ScxAl1−xN material were investigated for scandium (Sc) concentrations x = 0 to 0.375. The electro-acoustic properties are used to investigate the frequency response of the SAW delay line, based on the tilt θ° of the normal c-axis of the w-ScxAl1−xN piezoelectric thin film. We found that the piezoelectric response is improved as the Sc concentration increases, which is consistent with existing works in the literature. A 2D-phononic crystal pillars was then grafted on top of the surface, and the dependence of the acoustic band gaps is investigated with the help of the finite element method as a function of the Sc concentration and the tilted angle of w-Sc0.375Al0.625N. It was found that the two first band gaps exhibit a shift toward low frequencies with increasing Sc concentration. Moreover, the second acoustic bandgap is more sensitive to the inclination angle than the first. Furthermore, the insertion loss (S21) of w-Sc0.375Al0.625N is improved by 22 dB at θ° = 60°. The c-axis tilted Sc0.375Al0.625N-SAW delay line coupled with 2D-phononic crystals is a promising structure for low-loss and high-frequency SAW devices.

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Section: Analysis Of Surface Phononic Modes In the Saw-pncssupporting

confidence: 84%

“…Some examples of SAW devices properties based on Sc x Al 1-x N/sapphire structures have been investigated using experiments [27] and theories [13,14,28], showing relatively high insertion losses. By comparison, Sc x Al 1-x N/sapphire structures are promising SAW devices for high-temperature sensor applications [16,29,30].…”

Section: Introductionmentioning

confidence: 99%

Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (ScxAl1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

Arab¹,

Kanouni²,

Serhane

et al. 2022

Crystals

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“…Regarding the SAW, insulative substrates are often adopted [144]. Silicon [145,146] and sapphire [147][148][149][150] are the two commonly used substrates. Other insulative substrates were also reported, such as 6H silicon carbide (6H-SiC) [151], diamond [152], silicon dioxide (SiO 2 ), and polysilicon [153].…”

Section: Electrodes and Substratesmentioning

confidence: 99%

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Zha,

Luo,

Tao

et al. 2024

AAPPS Bull.

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Bandpass filters with high frequency and wide bandwidth are indispensable parts of the fifth-generation telecommunication technologies, and currently, they are mainly based on surface and bulk acoustic wave resonators. Owing to its high mechanical strength, excellent stability at elevated temperatures, good thermal conductivity, and compatibility with complementary metal-oxide-semiconductor technology, aluminum nitride (AlN) becomes the primary piezoelectric material for high-frequency resonators. This review briefly introduces the structures and key performance parameters of the acoustic resonators. The common filter topologies are also discussed. In particular, research progresses in the piezoelectric AlN layer, electrodes, and substrates of the resonators are elaborated. Increasing the electromechanical coupling constant is the main concern for the AlN film. To synthesize AlN in single-crystalline or poly-crystalline with a high intensity of (0002) orientation, and alloy the AlN with other elements are two effective approaches. For the substrates and bottom electrodes, lattice and thermal expansion mismatch, and surface roughness are critical for the synthesis of a high-crystal-quality piezoelectric layer. The electrodes with low electrical resistance, large acoustic-impedance mismatch to the piezoelectric layer, and low density are ideal to reduce insertion loss. Based on the research progress, several possible research directions in the AlN-based filters are suggested at the end of the paper.

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“…The addition of Sc in Sc x Al 1−x N strongly increases the measured piezoelectric coefficients of this material if x increases up to the value of x = 0.43 [8,9]. Four times d 33 enhancement is reported for Sc 0.43 Al 0.57 N compared to AlN [10,11]. Because of its strong electromechanical coupling and improved piezoelectricity, ScAlN allows the application field widening of SAW devices manufactured on this material.…”

Section: Introductionmentioning

confidence: 99%

Experimental Analysis of Rayleigh and Sezawa Modes Resonance Frequencies in SAW Devices Manufactured on Sc₀.₃Al₀_.₇N/Si^†

Nicoloiu,

Boldeiu,

Nastase

et al. 2024

IEEJ Transactions Elec Engng

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GHz operating single port SAW resonators have been manufactured on Sc0.3Al0.7N/Si substrate. The thickness of the ScAlN thin layer was 0.8 μm. Advanced nano‐lithographic techniques have been developed for devices manufacturing. Rayleigh and Sezawa modes have been evidenced on Sc0.3Al0.7N/Si structure. The targeted applications are temperature sensors for harsh environmental operations. The sensitivity and temperature coefficient of frequency (TCF) of the manufactured devices have been experimentally determined and analyzed. The mode shapes of the resonances that appear in the devices supported on Sc0.3Al0.7N/Si substrate were evidenced by finite element method (FEM) simulations. A technique that combines FEM with Coupling of Modes (COM) was used for the determination of the resonance frequencies. Simulations performed for the temperature dependence of the resonance frequency led to results close to the experimental ones for the Rayleigh mode as well as for the Sezawa mode for devices supported on Sc0.3Al0.7N/Si substrate. © 2024 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC.

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Theoretical and experimental study of ScAlN/Sapphire structure based SAW sensor

Cited by 10 publications

References 12 publications

Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (ScxAl1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (ScxAl1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Experimental Analysis of Rayleigh and Sezawa Modes Resonance Frequencies in SAW Devices Manufactured on Sc₀.₃Al₀_.₇N/Si^†

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Theoretical and experimental study of ScAlN/Sapphire structure based SAW sensor

Cited by 10 publications

References 12 publications

Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (ScxAl1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (ScxAl1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Experimental Analysis of Rayleigh and Sezawa Modes Resonance Frequencies in SAW Devices Manufactured on Sc0.3Al0.7N/Si†

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Product

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Experimental Analysis of Rayleigh and Sezawa Modes Resonance Frequencies in SAW Devices Manufactured on Sc₀.₃Al₀_.₇N/Si^†