Theoretical and experimental study of α-Sn deposited on CdTe(001)

Gómez, Jordi; Guenzburger, Diana; Ellis, Donald E; Hu, Michael Y.; Alp, E.E.; Baggio‐Saitovitch, E.; Passamani, E. C.; Ketterson, J. B.; Cho, S.

doi:10.1103/physrevb.67.115340

Cited by 9 publications

(8 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The significantly higher δ value for α-Sn in our samples, compared to bulk samples [27][28][29][30][31] and films 32,33 , implies an elevated 5s electron density value 34,35 as this shift cannot be an intrinsic effect of the Sn nucleus, but rather results from a difference in the electron density around it. Since we observed only one crystallographic site of Sn, without any quadruple splitting, and since the crystal structure of the grown α-Sn films remains unchanged compared to bulk α-Sn, the existence of the compressive strain is confirmed 36 .…”

Section: A Chemical Composition and Surface Structurementioning

confidence: 89%

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal α-Sn

et al. 2020

View full text Add to dashboard Cite

In-plane compressively strained α-Sn films have been theoretically predicted and experimentally proven to possess nontrivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained α-Sn films on InSb(100), without heating of the substrate during growth, nor using any dopants. The α-Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film's surface. Local insight into the surface morphology was provided by scanning tunneling microscopy. We detected the existence of compressive strain using Mössbauer spectroscopy and we observed a remarkable robustness of the grown samples against ambient conditions. The topological character of the samples was confirmed by angle-resolved photoemission spectroscopy, revealing the Dirac cone of the topological surface state. Scanning tunneling spectroscopy, moreover, allowed obtaining an improved insight into the electronic structure of the 3D topological Dirac semimetal α-Sn above the Fermi level.

show abstract

Section: A Chemical Composition and Surface Structurementioning

confidence: 89%

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal α-Sn

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Each of the layers is biaxially strained according to the lattice mismatch to the zinc-blende substrate, on which an α-Sn film of varying thickness is assumed to be pseudomorphically grown. Such gray tin films can be indeed grown by molecular beam epitaxy on CdTe(001) wafers [46,47]. The strain value −0.23% is used in the theoretical studies.…”

Section: Surface Modelingmentioning

confidence: 99%

Topologicalα-Sn surface states versus film thickness and strain

2014

View full text Add to dashboard Cite

The theoretical prediction that gray tin represents a strong topological insulator under strain [L. Fu and C.L. Kane, Phys. Rev. B 76, 045302 (2007)] is proven for biaxially strained α-Sn layers with varying thickness by means of a generalized density functional theory with a nonlocal exchange-correlation potential that widely simulates quasiparticle bands and a tight-binding method including intra-and interatomic spin-orbit interaction. Hydrogen-passivated surfaces are modeled by symmetric slabs. In contrast to the conventional picture of a topological insulator, we find topological gapless surface states below the strain-induced bulk gap, in agreement with photoemission studies. The topological surfaces states do not emerge out of the lower + 8 states but are strongly influenced by the inverted bulk − 7 band, i.e., lie within the negative bulk sp gap. We show that the position of the Dirac point and the dispersion of the surrounding bands depend on the thickness of the α-Sn layer but are less influenced by strain. The resulting Fermi velocities agree well with available photoemission data.

show abstract

“…Using the multidimensional numeral integer method, self‐consistent process is carried out to obtain ε i , φ i ( r ) and others. DFT–DVM method can be used to calculate larger structure models of molecules, clusters, and solids, so it has been widely used in chemistry, physics, material science, an so on 11–14.…”

Section: Calculation Methods and Modelmentioning

confidence: 99%

Theoretical analysis on the structure of Nb‐doped SrBi₄Ti₄O₁₅

Hao

Liu

Min

et al. 2010

Int J of Quantum Chemistry

View full text Add to dashboard Cite

ABSTRACT:The structure of niobium-doped SrBi 4 Ti 4 O 15 was calculated by using density function and discrete variation method (DFT-DVM). By comparing the total energy of different doping sites, the total energy is found to be lower when Nb ion was substituted into the Ti site in the upper perovskite layer, which is far from the two bismuth (Bi) ions in the perovskite layer. The bonding strength of Nb (3)-O increases and the electronic conductivity of the SBT decreases after Nb doping.

show abstract

Theoretical and experimental study of α-Sn deposited on CdTe(001)

Cited by 9 publications

References 42 publications

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal α-Sn

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal α-Sn

Topologicalα-Sn surface states versus film thickness and strain

Theoretical analysis on the structure of Nb‐doped SrBi₄Ti₄O₁₅

Contact Info

Product

Resources

About

Theoretical and experimental study of α-Sn deposited on CdTe(001)

Cited by 9 publications

References 42 publications

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal α-Sn

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal α-Sn

Topologicalα-Sn surface states versus film thickness and strain

Theoretical analysis on the structure of Nb‐doped SrBi4Ti4O15

Contact Info

Product

Resources

About

Theoretical analysis on the structure of Nb‐doped SrBi₄Ti₄O₁₅