Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films

Lee, Joohwi; Cho, Deok‐Yong; Jung, Jongwan; Kim, Un Ki; Rha, Sang Ho; Hwang, Cheol Seong; Choi, Jung-Hae

doi:10.1063/1.4811788

Cited by 29 publications

(26 citation statements)

References 24 publications

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“…The performance of TFT devices with an amorphous channel was reported to be improved by thermal annealing at a relatively high temperature presumably due to the decrease of localized defect states. 5,6 Therefore, maintaining an amorphous structure at temperatures as high as possible is crucial for the fabrication of high-performance TFT devices. Zinc tin oxide is known to remain as amorphous phase up to 650 C, which is much higher than the crystallization temperature of its binary oxides of ZnO or SnO 2 (250-300 C).…”

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confidence: 99%

Ab initio study on the structural characteristics of amorphous Zn2SnO4

Lee

Kang

Han

et al. 2013

Applied Physics Letters

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Articles you may be interested inThe effect of defects and disorder on the electronic properties of ZnIr2O4Ab initio study of structure in boron nitride, aluminum nitride and mixed aluminum boron nitride amorphous alloysThe structural characteristics of amorphous Zn 2 SnO 4 were investigated using ab initio calculations in comparison with its crystalline phase. By amorphization, both the coordination number of Zn and the most probable bond length of Zn-O decreased, and the O-Zn-O angle distribution became broader. Meanwhile, the coordination number of Sn was almost unchanged, and the reducing tendency in the most probable bond length of Sn-O as well as the extent of broadening in the O-Sn-O angles were less distinct. The significant changes in Zn-O bonds by amorphization partly account for the higher crystallization temperature of Zn 2 SnO 4 compared to its binary oxides. V C 2013 AIP Publishing LLC. [http://dx.

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confidence: 99%

Ab initio study on the structural characteristics of amorphous Zn2SnO4

Lee

Kang

Han

et al. 2013

Applied Physics Letters

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“…This type of behavior is very desirable for most displays circuit applications, because TFT exhibiting this property have large output impedance. Table I compares the important device parameters of the aluminum-doped zinc oxide TFTs with those ZnO-based TFTs reported in the literature [15][16][17][18][19][20][21][22][23][24][25]. The results show that the aluminum-doped zinc oxide TFTs have very nice electrical properties.…”

Section: Resultsmentioning

confidence: 81%

“…Indium Gallium Zinc Oxide (IGZO) TFTs is the most popular in recent years due to high performance [14,15], but we know that indium is not an abundant material in the earth's crust [21,22]. In is very expensive, and the low binding energy of In with oxygen sometimes brings about concerns with reliability [22]. So that, a non-In active channel layer material offers competitive advantages such as lower cost and safety.…”

Section: Introductionmentioning

confidence: 99%

“…So that, a non-In active channel layer material offers competitive advantages such as lower cost and safety. Oxide semiconductor TFTs using ZnO [17], In-Zn-O [23], Zn-Sn-O [22], Al-Zn-O [16], Al-Zn-Sn-O [24], Hf-In-Zn-O [21] and In-Ga-Zn-O [25] as an active channel have been widely studied. Most oxide thin-film transistors require high temperature (>200 °C) processing.…”

Section: Introductionmentioning

confidence: 99%

“…Flexible transparent ZnO-based thin-film transistors have been considered as a potential alternative candidate to amorphous silicon (a-Si) TFTs [7][8][9][10][11][12][13]. Indium Gallium Zinc Oxide (IGZO) TFTs is the most popular in recent years due to high performance [14,15], but we know that indium is not an abundant material in the earth's crust [21,22]. In is very expensive, and the low binding energy of In with oxygen sometimes brings about concerns with reliability [22].…”

Section: Introductionmentioning

confidence: 99%

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Flexible aluminum-doped zinc-oxide thin-film transistor fabricated on plastic substrates

et al. 2014

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We have studied processing and characteristics of flexible Aluminum-doped Zinc Oxide thin-film transistors (AZO TFTs) fabricated on plastic substrates using radio frequency (rf) magnetron sputtering. To improve the performance of flexible AZO TFT, we studied effects of device structures on characteristics of the aluminum-doped zinc oxide thin film transistors. The electrical properties of top-gate type and bottom-gate type AZO TFTs were investigated, respectively. The top-gate type AZO TFTs shows a threshold voltage of 1.4 V, a I on /I off current ratio of 1.0×10 7 , a field effect mobility of 28.2 cm 2 / V•s, a subthreshold swing of 0.19 V/decade. And the bottom-gate type AZO TFTs shows a threshold voltage of 1.7 V, a I on /I off ratio of 1.0×10 7 , a field effect mobility of 209 cm 2 / V•s, a subthreshold swing of 0.16 V/decade, and the off current of less than 10 -11 A at room temperature. Both TFTs show low threshold voltage, high I on /I off ratio and high field effect mobility. By comparison, the bottom-gate type AZO TFTs shows better characteristics. The flexible AZO-TFT is a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics due to flexible, transparency, high mobility, and low-temperature processing.

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Functional Perovskites by Atomic Layer Deposition – An Overview

Sønsteby

Fjellvåg

Nilsen

2017

Adv Materials Inter

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properties in thin film complex oxides and their heterostructures is still in its infancy.Functional perovskite oxide thin films have traditionally been deposited by physical, high temperature techniques, such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD). While these methods can provide films of very high structural quality, they do not offer deposition of conformal film on complex structures while maintaining control of stoichiometry. Chemical deposition techniques were long thought unsuitable for deposition of complex systems with high structural quality. This has changed dramatically over the last two decades. One of the most important techniques to emerge in this area has been atomic layer deposition (ALD).In this short review we aim to summarize the perovskite and ABO 3 -oxides, down to the ilmenite structure, that have been deposited using the ALD technique. The review includes work done over the last 20 years, and covers all oxide perovskites with ferromagnetic, piezoelectric and ferroelectric functionality known to have been deposited by ALD ( Table 1). The origin of the properties in these specific structures is briefly discussed, followed by a complete listing of the known systems. Perovskite heterostructures with new properties and combinations of properties are brought up, before thoughts on possible future work in the field concludes the paper. Why Atomic Layer Deposition?The ALD technique was pioneered independently in both Russia and Finland during the 1960s and 70s, and its history was thoroughly described by Puurunen in 2014. [4] The technique has been comprehensively discussed in several review papers over the last years. The first commercial application was to deposit zinc sulfide, used for electroluminescent display panels. The number of materials with known deposition routes was very limited for the first 20 years, before it exploded in the 1990s and still continues to grow. At the time of the review written by Miikkulainen et al. in 2013, binary oxides of most of the natural elements had been reported, as well as many nitrides, sulfides and fluorides (Figure 2). [5] As the community has embraced the possibility of growing epitaxial films of high chemical and structural quality, systems that are even more complex have been deposited, including materials with ternary, quaternary and even quinary compositions.The advantages and drawbacks of ALD as a thin film deposition technique have been reviewed several times the The last 20 years have seen a massive increase in reports on complex oxides with functional properties synthesized by atomic layer deposition (ALD). Many of these compounds have perovskite or perovskite-related structures, and exhibit a range of electric and magnetic properties. This short review summarizes the current status of functional perovskites and ABO 3 compounds down to the ilmenite structure prepared by ALD, focusing on ferromagnetism and ferro-and piezoelectricity. All perovskite-related compounds known to have been deposited by ALD down to the ilmeni...

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Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films

Cited by 29 publications

References 24 publications

Ab initio study on the structural characteristics of amorphous Zn2SnO4

Ab initio study on the structural characteristics of amorphous Zn2SnO4

Flexible aluminum-doped zinc-oxide thin-film transistor fabricated on plastic substrates

Functional Perovskites by Atomic Layer Deposition – An Overview

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