New Research on Silicon - Structure, Properties, Technology 2017
DOI: 10.5772/67614
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Theoretical and Experimental Characterization of Silicon Nanoclusters Embedded in Silicon-Rich Oxide films

Abstract: We present theoretical calculations using DFT method and the Global Reaction Model (GRM) for molecular structures and photoluminescence (PL) and Fourier Transform Infrared (FTIR) spectroscopy for silicon nanoclusters (Si-NCs) embedded in silicon rich oxide (SRO) films. Correlations between theoretical predictions and experimental results are made taking as reference experimental results obtained from measurements performed on SRO thin films obtained by the Hot Filament Chemical Vapor Deposition (HFCVD) techniq… Show more

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Cited by 2 publications
(2 citation statements)
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“…By analyzing the spectra of infrared spectroscopy with the Fourier transformation, it was possible to obtain information on the structure of the tested samples in terms of the qualitative composition of the materials. In the case of silicon dioxide, the typical spectrum is characterized by the presence of three bands with maximum peaks at 1100, 800 and 450 cm −1 [ 47 , 48 ]. For all samples of the tested phyto-ashes, analogous maxima were obtained, differing in their surface areas ( Figure 4 ).…”
Section: Resultsmentioning
confidence: 99%
“…By analyzing the spectra of infrared spectroscopy with the Fourier transformation, it was possible to obtain information on the structure of the tested samples in terms of the qualitative composition of the materials. In the case of silicon dioxide, the typical spectrum is characterized by the presence of three bands with maximum peaks at 1100, 800 and 450 cm −1 [ 47 , 48 ]. For all samples of the tested phyto-ashes, analogous maxima were obtained, differing in their surface areas ( Figure 4 ).…”
Section: Resultsmentioning
confidence: 99%
“…According to experimental and calculated data [20], absorption peaks in the area of 655-677 cm The observed widening of the short-wave wing of 900-1200 cm -1 peak seems to occur due to the appearance of a small absorption peak in the area of 1170 cm -1 , typical for Si-O-C bond [13,21,22].…”
Section: Sio 2 +Si =2siomentioning
confidence: 99%