Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers

Tomić, Stanko; O’Reilly, Eoin P.; Fehse, R.; Sweeney, S. J.; Adams, A.R.; Andreev, A. D.; Choulis, Stelios A.; Hosea, T. J. C.; Riechert, H.

doi:10.1109/jstqe.2003.819516

Cited by 147 publications

(121 citation statements)

References 52 publications

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“…This value is only slightly lower than the theoretical result ͑ϳ1300 cm −1 ͒ for 1.3 m GaInNAs quantum wells. 3 On the other hand, the differential gain dg/ dI is 1.25 cm −1 / mA at 10°C and decreases with increasing temperature. This value is lower than the typical 5c m −1 / mA in the InGaAs͑P͒ / InP system.…”

Section: Resultsmentioning

confidence: 96%

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Gain spectra of 1.3μm GaInNAs laser diodes

Zhang

Gupta

Barrios

et al. 2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Gain spectra of 1.3 μm GaInNAs laser diodes Zhang, X.; Gupta, J. A.; Barrios, P. J.; Pakulski, G.; Wu, X.; Delâge, A.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1116/1.2186662 A, 24, 3, pp. 787-790, 2006-05 We present an experimental investigation of the optical gain properties of 1.3 m GaInNAs double quantum well ridge waveguide laser diodes. High-resolution gain spectra versus injection current and temperature were obtained by measuring the modulation depth introduced into the spontaneous emission spectrum by the Fabry-Pérot resonances. As the injection current increases, the modal gain spectral peak experiences a small blueshift over the photon energy, and the magnitude increases asymptotically, saturating at the lasing threshold level of 24.4 cm −1 . The peak of the modal gain spectra exhibits a redshift with an average rate of 0.58 nm/°C as the temperature increases from 30 to 50°C. For wavelengths corresponding to photon energy below the band gap, the modal gain spectra converge to the internal loss of 7 cm −1 . The full width at half maximum of the gain spectrum is 41.1 meV at 30°C, 40 mA and increases with injection current at a rate of 0.42 meV/ mA. The high optical gain and low internal loss indicate that GaInNAs is a promising active material for long wavelength laser diodes. Journal of vacuum science and technology

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Section: Resultsmentioning

confidence: 96%

“…2, 3 Both systems have a large conduction band offset between the QWs and barriers. This large band offset provides better electron confinement that suppresses thermal-induced carrier leakage, enhances differential gain, and reduces the temperature sensitivity of the devices.…”

Section: Introductionmentioning

confidence: 99%

Gain spectra of 1.3μm GaInNAs laser diodes

Zhang

Gupta

Barrios

et al. 2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…These values are lower than for 1.3 m GaInNAs lasers, 15 while it was noted in Ref. 16 that the differential gain in GaInNAs is lower than in pure GaInAs with the introduction of even 0.25% nitrogen due to the strong coupling between the N resonant band and the conduction band edge states.…”

Section: Gain and Lifetime Of Gainnassb Narrow Ridge Waveguide Laser mentioning

confidence: 82%

Gain and lifetime of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.56μm

Gupta

Barrios

Caballero

et al. 2006

Applied Physics Letters

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca.

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“…One must include the interaction between the N resonant states and the conduction band edge to describe the variation of the ͑zone-center͒ conduction band edge energy with N. This leads to a modified ten-band Hamiltonian as shown in Ref. 17. The ten-band Hamiltonian describes on average interaction of the all N atoms with the host material.…”

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confidence: 99%

Intersubband gain without global inversion through dilute nitride band engineering

Pereira

Tomić

2011

Applied Physics Letters

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We investigate the possibility of interconduction band gain without global inversion by engineering the conduction band effective masses so that the upper lasing subband has an effective mass considerably smaller than the lower lasing subband that could not be obtained in conventional III-V materials. We recover the expected dispersive gain shape for similar masses and contrasting results if the effective masses characterizing the relevant subbands are very different.

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Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers

Cited by 147 publications

References 52 publications

Gain spectra of 1.3μm GaInNAs laser diodes

Gain spectra of 1.3μm GaInNAs laser diodes

Gain and lifetime of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.56μm

Intersubband gain without global inversion through dilute nitride band engineering

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