Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy

Dubrovskiı̆, V. G.; Sibirev, N. V.; Cirlin, G. É.; Harmand, J. C.; Ustinov, V. M.

doi:10.1103/physreve.73.021603

Cited by 174 publications

(78 citation statements)

References 30 publications

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“…The key effect underlying the VLS mechanism of NW growth is the decrease of the nucleation barrier on the NW top facet with respect to the case of a thin film without a catalyst [5,6,15]. The nucleation process determines the NW morphology [16][17][18], crystal structure [7,12,15,19,20], doping profiles [21,22], and abruptness of heterointerfaces [23].…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, sufficiently narrow NWs form in the so-called mononuclear regime where only one twodimensional (2D) island nucleates in each layer and then rapidly spreads to fill the complete ML slice [14,25,27]. Most theoretical models consider VLS growth of NWs as a steadystate process at a time-independent supersaturation [5,6,9,17,28]. In this case, 2D nucleation events occur randomly and independently of each other [10,14,29].…”

Section: Introductionmentioning

confidence: 99%

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Modeling the nucleation statistics in vapor–liquid–solid nanowires

Sibirev

Назаренко

Zeze

et al. 2014

Journal of Crystal Growth

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The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Abstract: The statistics of nucleation events in nanowires growing via the vapor-liquid-solid mechanism in the mononuclear regime is studied theoretically. A semi-analytical model is developed which is capable of describing the distributions of time intervals between the successive nucleation events and some other useful characteristics of nucleation statistics. Very importantly, our model accounts for desorption from the droplet, which was not included in the previous studies. It is shown that the relative dispersion of nucleation distributions increases with the nanowire radius and at a higher desorption rate from the droplet, leading to the corresponding broadening of the length distribution. Using the model is also shown to fit well experimental data available on nucleation statistics in the Au-catalyzed Si and III-V nanowires.We proposed theoretical model of nucleation during the VLS growth of nanowires in the mononuclear regimeThe model accounts for desorption from the droplet and allows one to describe the nucleation statistics and the nanowire length distribution.It was shown that the relative dispersion of nanowire length increases with the NW radius and at a higher desorption from the droplet. *Highlights (for review) AbstractThe statistics of nucleation events in nanowires growing via the vapor-liquid-solid mechanism in the mononuclear regime is studied theoretically. A semi-analytical model is developed which is capable of describing the distributions of time intervals between the successive nucleation events and some other useful characteristics of nucleation statistics. Very importantly, our model accounts for desorption from the droplet, which was not included in the previous studies. It is shown that the relative dispersion of nucleation distributions increases with the nanowire radius and at a higher desorption rate from the droplet, leading to the corresponding broadening of the length distribution. Using the model is also shown to fit well experimental data available on nucleation statistics in the Au-catalyzed Si and III-V nanowires. AbstractThe statistics of nucleation events in nanowires growing via the vapor-liquid-solid mechanism in the mononuclear regime is studied theoretically. A semi-analytical model is developed which is capable of describing the distributions of time intervals between the successive nucleation events and some other useful characteristics of nucleation statistics. Very importantly, our model accounts for desorption from the droplet, which w...

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling the nucleation statistics in vapor–liquid–solid nanowires

Sibirev

Назаренко

Zeze

et al. 2014

Journal of Crystal Growth

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“…On the other hand, although thick NWs were realized at 420°C, the NWs diameter decreased with increasing temperatures in the range of 420-450°C due to the increased adatoms diffusion to the NWs tip in favor of axial growth. This can be interpreted in terms of the temperature-dependent adatom diffusion flux from the substrate to the NWs tip (Dubrovskii et al 2006;Harmand et al 2007). The continued decline in diameter beyond 450°C is understandable, given the high NWs yield and temperature-dependent In desorption at high temperatures.…”

Section: Temperature Dependencementioning

confidence: 99%

Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon

Anyebe

2017

Appl Nanosci

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The influence of growth parameters on the morphology and density of InAs nanowires (NWs) grown on bare Si substrates using Indium (In) droplets as catalyst is investigated. By tuning the growth temperature, V/III flux ratio, and growth rate, the diameter and yield of asgrown NWs were controllably manipulated. It is demonstrated that the In-droplet-assisted growth of InAs NWs can only be realized on bare Si within a relatively narrow growth window of 420-475°C. Below 420°C, NWs' growth is kinetically limited, while the highest yield of vertically aligned NWs was obtained at *450°C. It is shown that In-catalyzed InAs NWs nucleation can only be realized on Si at highly As-rich conditions (V/III flux ratio [50), while the axial growth rate was found to be strongly dependent on the V/III flux ratio. The nucleation and axial growth of In-catalyzed InAs NWs are promoted by a low growth rate, while a high growth rate favors the formation of unwanted parasitic islands.

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“…[152][153] Many theoretical [154][155] and experimental research 156 works have been tried to understand the effects that influence the nanowire growth rate. According to these works, apart from the direct impingement of growth species on the catalyst, they…”

Section: Nanowire Growth Ratementioning

confidence: 99%

“…[162][163] As shown in the Figure 2.14, the growth rate dependence on nanoparticle diameter shows opposite tendency under different V/III ratios, and this is due to the changing of growth mechanisms. Through theoretical calculation, Dubrovskii 154 predicted the transition from decreasing to increasing length-diameter dependence at a certain critical diameter in the very wide-range sized Au-catalyzed nanowire growth in MBE. And they attributed this change to the transition from diffusion-induced growth to the traditional adsorption-induced VLS growth.…”

Section: Diameter Effectmentioning

confidence: 99%

Investigation of structural characteristics of III-V semiconductor nanowires grown by molecular beam epitaxy

Zhang¹

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One-dimensional nanowires made of III-V semiconductors have attracted significant research interest in the recent decades due to their distinct physical and chemical properties that can potentially lead to a wide range of applications in nanoelectronics and optoelectronics. As a key class of III-V semiconductor nanowires, InAs nanowires have attracted special attention due to their narrow bandgap, relatively high electron mobility, and small electron effective mass, which made them a promising candidate for the applications in future optical and highfrequency electronic devices.One of the challenges in realizing these unique III-V nanowire properties in nanowire-based devices is to integrate nanowires on the nano-devices or chips with well-organized arrangement. To solve this issue, the epitaxial nanowire growth provides the uniqueness that well aligned nanowires can be grown on the chosen substrates, and by selecting substrates with particular orientations, specifically orientated nanowires can be grown. Au-assisted nanowire growth is one of the most common methods to grow epitaxial III-V nanowires via the vapor-liquid-solid (VLS) mechanism or vapor-solid-solid (VSS) mechanism.For III-V nanowires, one of the coherent problems is that the stacking faults and/or twin defects can easily be introduced in both wurtzite or zinc-blende structured nanowires due to the small energy differences between wurtzite and zinc-blende stacking sequences of their dense planes. For III-V nanowires to be practically useful, it is of significant importance to minimize the lattice defects in nanowires, and to control their crystal phase and structural quality. In this regard, in this thesis, we investigated the growth parameters on the growth behaviour, crystal phase and structural quality of III-V nanowires, particularly InAs and GaAs nanowires. By carefully tuning the growth parameters, we have successfully achieved the controlled growth of InAs and GaAs nanowires with defect-free wurtzite structure and/or zincblende structure. I acknowledge that an electronic copy of my thesis must be lodged with the University Library and, subject to the policy and procedures of The University of Queensland, the thesis be made available for research and study in accordance with the Copyright Act 1968 unless a period of embargo has been approved by the Dean of the Graduate School.I acknowledge that copyright of all material contained in my thesis resides with the copyright holder(s) of that material. Where appropriate I have obtained copyright permission from the copyright holder to reproduce material in this thesis. In the meantime, I am very grateful for the staff of Centre for Microscopy and Microanalysis (CMM) at UQ, who helped me in so many ways. They are Richard IV Publications during candidature

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Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy

Cited by 174 publications

References 30 publications

Modeling the nucleation statistics in vapor–liquid–solid nanowires

Modeling the nucleation statistics in vapor–liquid–solid nanowires

Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon

Investigation of structural characteristics of III-V semiconductor nanowires grown by molecular beam epitaxy

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