Theoretical analysis of single electron spin surface detections

Li, F.X.; Tabib-Azar, Massood; Mann, J. Adin

doi:10.1109/nems.2008.4484504

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2014

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“…With the size scaling down, the single-electron effect becomes more important for the electrical performances of memory devices (1)(2). Recently, some works have reported the detection of single electron transfer in sub-micro floating gate memory devices and various transfer methods have been proposed (3)(4)(5). However, the single electron transfer and single electron effect on electrical characteristics haven't determined precisely.…”

Section: Introductionmentioning

confidence: 99%

The Single-Electron Transfer in Polysilicon-Oxide-Nitride-Oxide-Silicon Devices

Sheng

Guo

et al. 2014

ECS Trans.

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In this study, the low voltage CHEI program is used to achieve single electron injection in nitride layer of nano-scaled SONOS (polysilicon-oxide-nitride-silicon) devices. By investigating various CHEI conditions and different temperature, the best single electron transfer condition is determined. Under this condition, the single electron induced current steps are in good agreement with theoretical result.

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