Theoretical analysis of high-temperature characteristics of 1.3-μm InP-based quantum-well lasers

Seki, S.; Yokoyama, K.; Sotirelis, Paul

doi:10.1109/2944.401205

Cited by 22 publications

(24 citation statements)

References 31 publications

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“…14,15 However, in such measurements with our samples we observe no change in the energy of the peak of the absorption spectrum as a function of applied bias 16 indicating that the overlap of the electron and hole wave functions is insensitive to the local electric field in our samples. The modeling of quantum well structures, for example, 17 based on the self-consistent solution of the Schrodinger-Poisson equations and with carrier density dependent broadening of the Fermi golden rule optical gain spectrum, suggests that the electrostatic deformation of energy bands ͑here described as a relative movement of the quasi-Fermi levels and included within f c − f v ͒ has a much larger effect than the carrier density dependent homogenous broadening. Therefore we will focus here on changes in the degree of inversion, and to understand the effect of p doping we will simulate the behavior of f c − f v in our structures with and without p doping.…”

Section: Calculationsmentioning

confidence: 99%

Gain in p-doped quantum dot lasers

Smowton

Sandall

Liu

et al. 2007

Journal of Applied Physics

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We directly measure the gain and threshold characteristics of three quantum dot laser structures that are identical except for the level of modulation doping. The maximum modal gain increases at fixed quasi-Fermi level separation as the nominal number of acceptors increases from 0 to 15 to 50 per dot. These results are consistent with a simple model where the available electrons and holes are distributed over the dot, wetting layer, and quantum well states according to Fermi-Dirac statistics. The nonradiative recombination rate at fixed quasi-Fermi level separation is also higher for the p-doped samples leading to little increase in the gain that can be achieved at a fixed current density. However, we demonstrate that in other similar samples, where the difference in the measured nonradiative recombination is less pronounced, p doping can lead to a higher modal gain at a fixed current density.

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Section: Calculationsmentioning

confidence: 99%

Gain in p-doped quantum dot lasers

Smowton

Sandall

Liu

et al. 2007

Journal of Applied Physics

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“…Material gain for an arbitrary well is calculated as in our earlier work [19,20], which incorporates band-gap renormalization and Coulombic and non-Marko-vian effects [21][22][23][24][25][26]. The TE material gain for a single well is…”

Section: Theoretical Modelmentioning

confidence: 99%

Broad gain spectra of single and multiple InGaAsN quantum well systems

Miloszewski

Wartak

Weetman

2009

Physica Status Solidi (b)

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The optical gain of single and multiple quantum well systems fabricated from InGaAsN/GaAs was investigated. We performed a numerical analysis to find structures which would increase the gain bandwidth for application in semiconductor optical amplifiers and broadband tunable lasers. A 10‐band k · p Hamiltonian was used to calculate TE modal gain spectra. First, we calculated the gain spectra of a single quantum well for varying nitrogen compositions and well widths at fixed carrier density. Next, we calculated the gain spectra for two‐ and three‐quantum‐well systems which used the compositions and sizes of the previously analyzed single wells. The three‐quantum‐well system had an approximate 100% increase of gain bandwidth in comparison with a single quantum well. This increase is due to carefully selected different values of nitrogen compositions in various quantum wells. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…However, the net gain spectrum is the composite of the contributions from the nine individual wells, which can be quite different [12]. The net gain spectrum has been measured for CMBH devices with different doping profiles and at different temperatures [7].…”

Section: Static Laser Performance: Characteristic Temperaturementioning

confidence: 99%

“…There is also a small term in the usual expression for related to the which is lost. Now we can get simplified expressions for the resonance frequency in terms of the well-by-well properties (12) where is the total modal gain and we introduce an effective differential gain , which is just the gain-averaged local differential gain (13) An expression for the damping can also be derived. However, the present analysis explicitly ignored the drive currents into each well, which from the simulations we know to have a nontrivial phase as a function of frequency away from the resonance frequency.…”

Section: Small-signal Modulationmentioning

confidence: 99%

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Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance

Witzigmann¹,

Hybertsen²,

Reynolds³

et al. 2003

IEEE J. Quantum Electron.

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Abstract-The temperature dependence of the performance of 1.3-m Fabry-Perot (FP) multiple-quantum-well (MQW) lasers is analyzed using detailed microscopic simulations. Both static and dynamic properties are extracted and compared to measurements. Devices with different profiles of acceptor doping in the active region are studied. The simulation takes into account microscopic carrier transport, quantum mechanical calculation of the optical and electronic quantum well properties, and the solution of the optical mode. The temperature dependence of the Auger coefficients is found to be important and is represented by an activated form. Excellent agreement between measurement and simulation is achieved as a function of both temperature and doping profile for static and dynamic properties of the lasers, threshold current density, and effective differential gain. The simulations show that the static carrier density, and hence the contribution to the optical gain, varies significantly from the quantum wells on the p-side of the active layer to those on the n-side. Furthermore, the modal differential gain and the carrier density modulation also vary. Both effects are a consequence of the carrier dynamics involved in transport through the MQW active layer. Despite the complexity of the dynamic response of the MQW laser, the resonance frequency is determined by an effective differential gain, which we show can be estimated by a gain-weighted average of the local differential gain in each well.Index Terms-Laser modulation response, laser simulation, laser threshold current, optical gain, semiconductor quantum well laser diode.

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Theoretical analysis of high-temperature characteristics of 1.3-μm InP-based quantum-well lasers

Cited by 22 publications

References 31 publications

Gain in p-doped quantum dot lasers

Gain in p-doped quantum dot lasers

Broad gain spectra of single and multiple InGaAsN quantum well systems

Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance

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