Theoretical analysis of gain-recovery time and chirp in QD-SOA

Ben-Ezra, Y.; Haridim, M.; Lembrikov, B. I.

doi:10.1109/lpt.2005.853030

Cited by 70 publications

(46 citation statements)

References 17 publications

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“…The emission coefficient higher than the absorption coefficient by >6 times. Note here, the peak wavelength~697nm which is in the range of measurements in [7]. The result of emission and absorption can be compared with that in [6].…”

Section: Resultsmentioning

confidence: 88%

“…Note that, the hole dynamics are neglected due to their larger effective mass [7]. The energy diagram describing the REs system is shown in Figure 2.…”

Section: Qd-soa Characteristicsmentioning

confidence: 99%

“…Accordingly the rates of the WL carrier density ( ) w N , ES occupation probability (h) and GS occupation probability (f) can be described by the following REs system [7], (7) (8) …”

Section: Qd-soa Characteristicsmentioning

confidence: 99%

See 2 more Smart Citations

CdSe/ZnSe Quantum-Dot Semiconductor Optical Amplifiers

Al-Mossawi¹,

Al-Shatravi²,

Al-Khursan³

2012

Insciences J.

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CdSe/ZnSe quantum dot semiconductor optical amplifier is studied theoretically where the core/shell structure is discussed. Absorption and emission coefficients and noise figure are studied. The emission coefficient obtained is higher than the similar structure of InGaAs/InP. A 25dB gain is obtained. A low noise figure (5.5dB) is obtained. A high output power can be obtained. The simulated structure can be used to develop photonic integrated circuits.

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Section: Resultsmentioning

confidence: 88%

“…Note that, the hole dynamics are neglected due to their larger effective mass [7]. The energy diagram describing the REs system is shown in Figure 2.…”

Section: Qd-soa Characteristicsmentioning

confidence: 99%

See 1 more Smart Citation

CdSe/ZnSe Quantum-Dot Semiconductor Optical Amplifiers

Al-Mossawi¹,

Al-Shatravi²,

Al-Khursan³

2012

Insciences J.

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show abstract

“…Based on the rate equations used in [4] for the wetting layer (WL) carrier density N w , occupation probabilities for ground and exited states (f and h), respectively one can write.…”

Section: Qd-soamentioning

confidence: 99%

“…The carrier dynamics described by the rate Equations are related only to electrons in the conduction band while hole dynamics can be neglected due to their larger effective mass [4]. In addition, typical values of the material parameters in Table 1 [5] for ZnSe/ZnS system where (E g = 2.…”

Section: Qd-soamentioning

confidence: 99%

ZnSe / ZnS Quantum-Dot Semiconductor Optical Amplifiers

Al-Mossawi¹

2011

OPJ

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Analysis of all-optical demultiplexing from 160/320 Gbit/s to 40 Gbit/s using quantum-dot semiconductor optical amplifiers assisted Mach-Zehnder interferometer

Zhang

2010

Microw. Opt. Technol. Lett.

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ABSTRACT:The performance of ultrafast all-optical demultiplexer using quantum-dot semiconductor optical amplifiers (QD-SOAs) assisted Mach-Zehnder interferometer (MZI) is analyzed. Through numerical simulations, a set of key parameters are optimized and all-optical demultiplexing from 160/320 Gbit/s to 40 Gbit/s can be realized with fairly high performance. The results are useful for the system performance studies and practical application.

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Theoretical analysis of gain-recovery time and chirp in QD-SOA

Cited by 70 publications

References 17 publications

CdSe/ZnSe Quantum-Dot Semiconductor Optical Amplifiers

CdSe/ZnSe Quantum-Dot Semiconductor Optical Amplifiers

ZnSe / ZnS Quantum-Dot Semiconductor Optical Amplifiers

Analysis of all-optical demultiplexing from 160/320 Gbit/s to 40 Gbit/s using quantum-dot semiconductor optical amplifiers assisted Mach-Zehnder interferometer

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