Theoretical analysis of a novel dual gate metal–graphene nanoribbon field effect transistor

Naderi, Ali

doi:10.1016/j.mssp.2014.11.051

Cited by 29 publications

(19 citation statements)

References 24 publications

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“…A semiconductor device can control the output loop current by controlling the electric eld effect of the input loop, FET. [166][167][168][169][170][171][172][173][174][175][176][177][178][179][180][181][182][183][184] In 2013, researchers proved that by introducing edge defects, to achieve a higher pH response of graphene FET, edge defects can be introduced. The decrease in GNR width increases the pH response.…”

Section: The Eld-effect Transistor (Fet)mentioning

confidence: 99%

Novel electrical properties and applications in kaleidoscopic graphene nanoribbons

Zou

Wang

2021

RSC Adv.

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Section: The Eld-effect Transistor (Fet)mentioning

confidence: 99%

Novel electrical properties and applications in kaleidoscopic graphene nanoribbons

Zou

Wang

2021

RSC Adv.

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“…Using linear and step-linear doping profiles for drain (source) in doped contact CNTFETs and GNRFETs can alleviate the short channel problems [14][15][16]. Dual-and triple-material gate structures which employ gate-material engineering with different work functions instead of doping engineering are another way to partially suppress the short channel effects in doped contact DG-GNRFETs [17].…”

Section: Journal Of Materialsmentioning

confidence: 99%

Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

Sarvari

Ghayour

Chen

et al. 2016

Journal of Materials

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Short channel effects of single-gate and double-gate graphene nanoribbon field effect transistors (GNRFETs) are studied based on the atomistic orbital model for the Hamiltonian of graphene nanoribbon using the nonequilibrium Green's function formalism. A tight-binding Hamiltonian with an atomistic orbital basis set is used to describe the atomistic details in the channel of the GNRFETs. We have investigated the vital short channel effect parameters such as on and off , the threshold voltage, the subthreshold swing, and the drain induced barrier lowering versus the channel length and oxide thickness of the GNRFETs in detail. The gate capacitance and the transconductance of both devices are also computed in order to calculate the intrinsic cut-off frequency and switching delay of GNRFETs. Furthermore, the effects of doping of the channel on the threshold voltage and the frequency response of the double-gate GNRFET are discussed. We have shown that the single-gate GNRFET suffers more from short channel effects if compared with those of the double-gate structure; however, both devices have nearly the same cut-off frequency in the range of terahertz. This work provides a collection of data comparing different features of short channel effects of the single gate with those of the double gate GNRFETs. The results give a very good insight into the devices and are very useful for their digital applications.

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“…One type of graphene nanoribbon-based field-effect transistors (GNRFETs) is metal oxide semicondutor (MOS)-like GNRFET [7][8][9][10]. In the MOS-like GNRFET, applying a gate voltage can reduce the potential barrier at the channel region, leading to flowing of carriers from the top of the barrier and reaching the drain side.…”

Section: Introductionmentioning

confidence: 99%

A numerical study of the nanoribbon field-effect transistors under the ballistic and dissipative transport

2017

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In this article, a detailed performance comparison is made between ballistic and dissipative quantum transport of metal oxide semicondutor-like graphene nanoribbon field-effect transistor, in ON and OFF-state conditions. By the self-consistent mode-space non-equilibrium Green's function approach, inter-and intraband scattering is accounted and the role of acoustic and optical phonon scattering on the performance of the devices is evaluated. We found that in this structure the dominant mechanism of scattering changes according to the ranges of voltage bias. Under large biasing conditions, the influence of optical phonon scattering becomes important. Also, the ambipolar and OFF-current are impressed by the phononassisted band-to-band tunneling and increased considerably compared to the ballistic conditions, although sub-threshold swing degrades due to optical phonon scattering.

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Theoretical analysis of a novel dual gate metal–graphene nanoribbon field effect transistor

Cited by 29 publications

References 24 publications

Novel electrical properties and applications in kaleidoscopic graphene nanoribbons

Novel electrical properties and applications in kaleidoscopic graphene nanoribbons

Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

A numerical study of the nanoribbon field-effect transistors under the ballistic and dissipative transport

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