2019
DOI: 10.1007/s10825-019-01353-z
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Theoretical analysis and optimization of high-k dielectric layers for designing high-performance and low-power-dissipation nanoscale double-gate MOSFETs

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Cited by 11 publications
(2 citation statements)
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“…Further development of low power biosensors requires a thorough investigation on various computational models used to minimize power without compromising on performance. Towards this end, Thriveni et al and Damodaran et al provided a detailed description and modelling of various types of leakage and power dissipation in a MOSFET and quantum dot-based modulation doped field effect transistor (MODFET), respectively [ 103 , 104 , 105 ]. The findings exhibited the need for a high k dielectric layer with larger conduction band offset (CBO) or a high band gap semiconductor layer for reducing leakage and minimizing power consumption.…”
Section: Challenges In Current Leakage Power Dissipation and Proposed...mentioning
confidence: 99%
“…Further development of low power biosensors requires a thorough investigation on various computational models used to minimize power without compromising on performance. Towards this end, Thriveni et al and Damodaran et al provided a detailed description and modelling of various types of leakage and power dissipation in a MOSFET and quantum dot-based modulation doped field effect transistor (MODFET), respectively [ 103 , 104 , 105 ]. The findings exhibited the need for a high k dielectric layer with larger conduction band offset (CBO) or a high band gap semiconductor layer for reducing leakage and minimizing power consumption.…”
Section: Challenges In Current Leakage Power Dissipation and Proposed...mentioning
confidence: 99%
“…The ndings of this study are correlated with various theories and experiments which have given strong credence to our assertions. The study has also taken into account in minimizing power dissipation as the device simulation is carried out with smaller applied bias from 0 to 1 voltage range [25].…”
Section: Introductionmentioning
confidence: 99%