1980
DOI: 10.1016/0021-9797(80)90309-4
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The zno/aqueous solution interface. II. mechanism of the slow process

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Cited by 10 publications
(15 citation statements)
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“…The good fit of experimental data to Values for the parameters indicate that as semiconductor mass concentration increases the OH -consumption rate increases. Consequently, as observed by other researchers, slow consumption of ions was found to be due to the presence of the semiconductor surface (16,18).…”
Section: Process Velocitysupporting
confidence: 56%
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“…The good fit of experimental data to Values for the parameters indicate that as semiconductor mass concentration increases the OH -consumption rate increases. Consequently, as observed by other researchers, slow consumption of ions was found to be due to the presence of the semiconductor surface (16,18).…”
Section: Process Velocitysupporting
confidence: 56%
“…The semiconductor/electrolyte solution interface has been studied by comparing the P-N junction (18)(19) because of the phenomenological similarities found between semiconductor/electrolyte and P-N junctions (16,19,20,23). On each of the faces, a concentration of free charge-carriers can move through the interface, so that, in both cases, the charge currents are charge-transfer phenomena.…”
Section: Theoretical Aspectsmentioning
confidence: 99%
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“…A theoretical justification for this procedure, based on a mechanism for the slow reaction which accounts for all data available at present, is given in another paper Ref. (15). b For cro, the surface charge at the pzc (pH 8.7) is taken as reference.…”
Section: Experiments At Constant Phmentioning
confidence: 99%
“…E-potentials of ZnO have been determined during the slow reaction in 0.01 and 0.001 M solutions (15), but only after 500 and 3800 min contact. In all cases investigated the E-potential does not change any more after 500 rain contact.…”
Section: F] Flihn~ndu~ -Nsmentioning
confidence: 99%