The wave approach to noise modeling of microwave transistors by including the correlation effect

Comparative Analysis of Different Cad Methods for Extraction of the Hemt Noise Wave Model Parameters

“…For this reason, a large number of circuit designers still uses the older and cheaper measurement setups, resulting in time-consuming noise measurements. Consequently, different transistor noise models were developed [1][2][3][4][5][6][7][8][9] in order to provide more efficient transistor noise analysis within circuit simulators. Most of the proposed transistor noise models represent the noise generated in a component using equivalent voltage and/or current sources [3,[5][6].…”

“…Most of the proposed transistor noise models represent the noise generated in a component using equivalent voltage and/or current sources [3,[5][6]. However, at microwave frequencies, a wave representation of noise looks attractive since it allows the use of scattering matrices for the noise computations, leading to advantages in Computer-Aided Design (CAD) of microwave networks [2,[7][8][9][10][11][12][13][14][15][16][17][18]. The power of the wave representation of noise lies in its ability to treat the network noise in terms of incident and reflected waves, which is compatible with the scattering matrix description of microwave networks.…”

Wave approach for noise modeling of gallium nitride high electron‐mobility transistors

“…The scattering matrices and the wave approach have appeared as an efficient tool for computer-aided design of networks working at microwave frequencies [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. The wave approach gives the possibility to treat the network noise in terms of incident and reflected waves, thus being compatible with the scattering matrix description of microwave networks.…”

“…Therefore, the wave representation of noise provides a suitable alternative to the most commonly used representations of noise generated in network based on the equivalent voltage and/or current sources. The wave approach has been successfully applied to the noise modeling of different transistor types, such as GaAs metal‐semiconductor field‐effect transistors (MESFETs), dual gate MESFETs, and high electron‐mobility transistors (HEMTs) , but to the best authors' knowledge, there are no published works on the noise wave modeling applied to transistors in gallium nitride (GaN) technology.…”

Bias Dependant Noise Wave Modelling Procedure of Microwave Fets

“…Therefore, during the last few decades an extensive work has been carried out in the field of signal / noise modelling of microwave transistors. There is a number of different models, starting from accurate physical models which require knowledge about the numerous technological parameters [1,2], through the widely used empirical models, mostly based on equivalent circuit representation of a transistor [3][4][5][6][7][8][9][10][11][12][13][14][15], to the models based on the application of the artificial neural networks, based either on the black box modelling approach [16,17] or on a combination with the empirical models [18].…”