The voltage endurance of cast and molded resins

Dakin, T. W.; Studniarz, S. A.

doi:10.1109/eic.1977.7461972

Cited by 10 publications

(5 citation statements)

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“…These models have been widely used up till now, together with the Inverse Power Model, and will likely be used even in the future for the design of insulation systems subjected to a level of electrical stress able to age insulation [13][14][15][16][17][18]. They are simple and include a quite small number of parameters, which can be estimated phenomenologically, that is, through accelerated life tests.…”

Section: Bulk Models and Space Chargementioning

confidence: 99%

Electrical aging and life models: the role of space charge

Mazzanti

Montanari

Dissado³

2005

IEEE Trans. Dielect. Electr. Insul.

215

112

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This paper has the aim of providing a view of a lively debated topic which has broad impact on the design of electrical apparatus and new insulating materials, that is, the interaction between space charge and aging processes of polymeric insulation. Aging models developed in recent decades that consider explicitly or implicitly the contribution of space charge to insulation degradation, under both dc and ac voltage, are dealt with, with the intention to point out their range of validity. Some conventional phenomenological models that have been used for much more than two decades without referring to space charges can be exploited to account for electrical field and activation energy modification due to space charge. These, together with models conceived considering space charges as the driving force for aging, are especially examined. In addition, recent models that disregard the action of space charge as an ageing factor, but consider space charge as the consequence of degradation processes are also discussed.

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Section: Bulk Models and Space Chargementioning

confidence: 99%

Electrical aging and life models: the role of space charge

Mazzanti

Montanari

Dissado³

2005

IEEE Trans. Dielect. Electr. Insul.

215

112

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“…According to the findings in Refs. [39] and [40], as seen in Fig. 2(a), the metallic cathode can give a broader region in comparison with the semiconductor cathode.…”

Section: Resultsmentioning

confidence: 80%

“…Since the cathodes are conducting materials in the studies of Refs. [39] and [40], the breakdown voltages at larger p become lower in comparison to that with the semiconducting cathode.…”

Section: Resultsmentioning

confidence: 91%

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Exploration of the Townsend regime by discharge light emission in a gas discharge device

Kurt

2014

Chinese Phys. B

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The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device (MGDD) with different applied voltages U and interelectrode distance d under various pressures in air. The anode and the cathode of the MGDD are formed by a transparent SnO 2 covered glass and a GaAs semiconductor, respectively. In the experiments, the discharge is found to be unstable just below the breakdown voltage U b , whereas the discharge passes through a homogeneous stable Townsend mode beyond the breakdown voltage. The measurements are made by an electrical circuit and a CCD camera by recording the currents and light emission (LE) intensities. The intensity profiles, which are converted from the 3D light emission images along the semiconductor diameter, have been analysed for different system parameters. Different instantaneous conductivity σ t regimes are found below and beyond the Townsend region. These regimes govern the current and spatio-temporal LE stabilities in the plasma system. It has been proven that the stable LE region increases up to 550 Torr as a function of pressure for small d. If the active area of the semiconductor becomes larger and the interlectrode distance d becomes smaller, the stable LE region stays nearly constant with pressure.

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