Proceedings of 37th International Cosmic Ray Conference — PoS(ICRC2021) 2021
DOI: 10.22323/1.395.0803
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The VERITAS-Stellar Intensity Interferometry (VSII) survey of Stellar Diameters

Abstract: Matthews a,d on behalf of the VERITAS Collaboration

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Cited by 1,065 publications
(1,605 citation statements)
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“…However, in most of the cases, the implication was to employ FA as a synthon in organic transformations or as a transfer hydrogenation agent and less attention was paid for its application as an LOHC. [ 50 ] In 2008, independent reports from the Beller and the Laurenczy groups demonstrated the incremental effects of additives on FA dehydrogenation to achieve higher TONs and TOFs albeit at the cost of reducing the volumetric capacity. [ 51 ] Many combinations of metal precursors/ligands were then evolved to obtain high efficiency towards FA dehydrogenation.…”
Section: Formic Acid To Powermentioning
confidence: 99%
“…However, in most of the cases, the implication was to employ FA as a synthon in organic transformations or as a transfer hydrogenation agent and less attention was paid for its application as an LOHC. [ 50 ] In 2008, independent reports from the Beller and the Laurenczy groups demonstrated the incremental effects of additives on FA dehydrogenation to achieve higher TONs and TOFs albeit at the cost of reducing the volumetric capacity. [ 51 ] Many combinations of metal precursors/ligands were then evolved to obtain high efficiency towards FA dehydrogenation.…”
Section: Formic Acid To Powermentioning
confidence: 99%
“…Cardiac surgery is recommended in patients with aortic valve stenosis and left ventricle (LV) dysfunction or significant ventricular arrhythmias (VA) even if they are asymptomatic (Priori et al, 2001) and can reduce the risk for SCD. Despite vast advances in surgery techniques, post-surgery mortality risk is high, especially in the first 3 months after the intervention, and often due to reduced LVEF and life-threatening VT/VF (Kaul et al, 1998;Rao et al, 2017).…”
Section: Introductionmentioning
confidence: 99%
“…The amorphous oxide semiconductor (AOS), indium gallium zinc oxide (IGZO) has also been demonstrated as active layer for memristors due to its great potential for 1T1M integration. [28][29][30][31][32][33][34][35][36] IGZO is often employed on TFTs in the display technology [37,38] as the semiconductor layer due to its excellent stability, cost-efficient manufacturing, and the additional control on its electrical conductivity provided by the oxygen and cation composition. [39] In fact, the development of neuromorphic displays is the unavoidable new trend for system-on-panel applications.…”
Section: Introductionmentioning
confidence: 99%