The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

Ardalı, Şükrü; Atmaca, G.; Li̇şesi̇vdi̇n, S. B.; Малин, Т. В.; Мансуров, В. Г.; Журавлев, К. С.; Tiraş, E.

doi:10.1002/pssb.201552135

Cited by 14 publications

(8 citation statements)

References 32 publications

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“…It should be noted that sample C exhibits an ultra-high 2DEG mobility at room temperature (2161.4 cm 2 /V·s) due to reduced piezoelectric scattering [19][20][21] at lower residual strain of the cross structure. This mobility is higher than most room temperature 2DEG mobilities of similar AlGaN/GaN heterostructures [22][23][24][25] and is comparable to the highest value of 2150 cm 2 /V·s reported to date. 26 This ultra-high room temperature mobility is beneficial to high-frequency electronic devices in room temperature application.…”

Section: Influence Of Contact Structure On the 2deg Performancementioning

confidence: 61%

Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

Zhong²,

et al. 2016

AIP Advances

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In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG) properties of AlGaN/GaN high electron mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition (MOCVD) on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72%) across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/V⋅s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/V⋅s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si.

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Section: Influence Of Contact Structure On the 2deg Performancementioning

confidence: 61%

Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

Zhong²,

et al. 2016

AIP Advances

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“…These high PCEs are very close to the theoretical maximum of 29.4%, [ 111 ] but, each new design has been coupled with an increase in complexity. Dielectric passivation schemes with SiO 2 , [ 112 ] Al 2 O 3 , [ 113 ] SiN x , [ 114 ] and hydrogenated amorphous silicon (a‐Si:H) [ 115 ] have become increasingly important and these require high‐vacuum and/or high‐temperature processes for their deposition. Likewise, carrier‐selective contacts require phosphorus/boron doping of bulk silicon or thin films thereof.…”

Section: Carbon Nanotubes In Silicon Photovoltaicsmentioning

confidence: 99%

Carbon Nanotubes for Photovoltaics: From Lab to Industry

Wieland

Han

Rust

et al. 2020

Advanced Energy Materials

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All other nanotube conformations (0° < θ < 30°) are referred to as being chiral. In this 1D system, circumferential electron confinement results in SWCNTs that are either metallic (m) or semiconducting (s) and the innate ability of small changes in diameter to impart large changes in the spectral position (size) of absorption maxima (bandgap) of the SWCNTs. [1a,2] For each chiral species these maxima appear as sets of discrete excitonic transitions (S 11 , S 22 , S 33 …etc.) in the infrared, visible, and ultraviolet and the ability to tune them with structure has made SWCNTs one of the most intensively studied nanomaterials of the past two decades. [3] SWCNTs meet all of the requirements for next generation technology to become flexible and potentially made entirely from carbon to aid disposal at the end of the product life-cycle. Applications for SWCNTs can be found across all fields of science including photonics, [4] telecommunications, [5] batteries, [6] fuel cells, [7] high frequency transistors, [8] biosensors, [9] novel memory devices, [10] molecular contacts, [11] and cancer research. [12] In particular, their chirality dependent bandgap, chemical stability, conductivity, and hole selectivity have made them attractive for new generation solar cells and light sensitive elements. [13] For example, there are 200 species in the dia meter range of 0.6-2 nm, which have first (S 11) and second (S 22) optical transitions ranging from 2.57 eV (visible) to 0.5 eV (near-infrared) and these already cover a majority of the solar spectrum (400-2000 nm), Figure 1d. [14] Being solutionprocessable and fiber-shaped, CNTs can easily be integrated into different types of solar cells with distinct functions. For example, as a photoactive layer in organic solar cell, a transparent electrode in silicon and perovskite solar cells or as counter electrode in dye-sensitized solar cells. [15] However, despite their promise, the number of real-world applications for SWCNTs in the photovoltaics (PV) industry continue to remain limited. The reasons for this are manifold and include the comparatively lower power conversion efficiency (PCE) and device area of SWCNT-based technologies, which drive simple cost-benefit arguments to retool existing production lines, ongoing challenges to orientate and control the structure of CNT films in a scalable manner, spurious health concerns associated with the use of CNTs [16] and importantly, the fact that it is still not possible to selectively synthesize SWCNTs of arbitrarily defined chirality. Most synthesis methods produce a 2:1 mixture of many semiconducting and metallic chiral types and even the CoMoCAT synthesis process, [17] which is well known to be highly enriched in small diameter (6,5), still contains at least 15 other chiral species in low concentration. Research efforts to achieve chiral specific growth are ongoing The use of carbon nanotubes (CNTs) in photovoltaics could have significant ramifications on the commercial solar cell market. Three interrelated research directions within t...

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“…where μ 0 is low-field mobility and v sat is saturation velocity. μ 0 values of 951N and 951Y are used as 2385 and 2244 cm 2 /V· s from [30], respectively. E C , n 1 , n 2 , and n 3 are adjustable fitting parameters.…”

Section: Resultsmentioning

confidence: 99%

“…The results of the Hall effect measurements of the samples are given in Table I. The measured sheet carrier densities of heterostructures without and with in situ Si 3 N 4 passivation layer are 1.21 × 10 13 and 1.31 × 10 13 cm −2 , respectively [30].…”

Section: Methodsmentioning

confidence: 99%

Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

Atmaca

Narin

Kutlu

et al. 2018

IEEE Trans. Electron Devices

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The aim of this paper is an investigation of electric field-dependent drift velocity characteristics for Al 0.3 Ga 0.7 N/AlN/GaN heterostructures without and with in situ Si 3 N 4 passivation. The nanosecond-pulsed currentvoltage (I -V ) measurements were performed using a 20-ns applied pulse. Electron drift velocity depending on the electric field was obtained from the I -V measurements. These measurements show that a reduction in peak electron velocity from 2.01 × 10 7 to 1.39 × 10 7 cm/s after in situ Si 3 N 4 passivation. Also, negative differential resistance regime was observed which begins at lower fields with the implementation of in situ Si 3 N 4 passivation. In our samples, the electric field dependence of drift velocity was measured over 400 kV/cm due to smaller sample lengths. Then, a wellknown fitting model was fitted to our experimental results. This fitting model was improved in order to provide an adequate description of the field dependence of drift velocity. It gives reasonable agreement with the experimental drift velocity data up to 475 kV/cm of the electric field and could be used in the device simulators. ). T. V. Malin and V. G. Mansurov are with the Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia. K. S. Zhuravlev is with the Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia, and also with the

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The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

Cited by 14 publications

References 32 publications

Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

Carbon Nanotubes for Photovoltaics: From Lab to Industry

Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

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