The variable threshold transistor, a new electrically-alterable, non-destructive read-only storage device

Wegener, H. A. R.; Lincoln, Abraham; Pao, H.C.; O'Connell, Maurice R.; Oleksiak, R. E.; Lawrence, H.

doi:10.1109/iedm.1967.187833

Cited by 44 publications

(20 citation statements)

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“…Ab03 blocking layer and high work-function gate materials [1] have been proposed to suppress the gate current during erase, which penalizes the erase performances. Alumina is the material of choice for the blocking oxide [21,22], mainly because of its high band-gap [30], which is believed to ensure a better reliability.…”

Section: B Blocking Dielectricmentioning

confidence: 99%

“…In nitride-based CT memory devices (SONOS [1], NROM [2], and TANOS [3]), the charge is stored into discrete traps and cannot move within the storage layer. This fundamental property allows the device to be much less sensitive to the local degradation of the tunnel oxide, which can increase exponentially the leakage current responsible of the threshold voltage VT reduction [6,7].…”

Section: C Harge L Ocaliza Non I Nside the Trapping L Ayermentioning

confidence: 99%

“…I NTRODUCTION Charge Trapping Flash memories (SONOS [1], NROM [2], TANOS [3], BE-SONOS [4]) are the most promISIng technology for ultra-scaled mass storage applications. The charge trapping layer (typically made of nitride) and high-K band-gap engineered tunnel and blocking dielectrics have been proposed to overcome some of the scaling limits of planar Floating Gate (FG) Flash devices without changing the basic architecture of the memory cell [5].…”

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confidence: 99%

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Fundamental reliability issues of advanced charge-trapping Flash memory devices

Larcher

Padovani

2010

2010 17th IEEE International Conference on Electronics, Circuits and Systems

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The basic reliability issues of Charge Trapping (CT) Flash memory devices will be discussed from a physical perspective, highlighting the reliability implications of process and technology innovations introduced to sustain the uninterrupted device scaling down. We will focus on the reliability issues related to the charge localization inside the trapping layer and the high-K band-gap engineered stacks introduced to implement both tunnel and blocking dielectrics.We will describe the physical mechanisms responsible of reliability degradation (data retention, array disturbs, endurance), discussing briefly the issues related to ultra-scaled and vertically stacked 3D Flash memory devices.

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Section: B Blocking Dielectricmentioning

confidence: 99%

Section: C Harge L Ocaliza Non I Nside the Trapping L Ayermentioning

confidence: 99%

mentioning

confidence: 99%

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Fundamental reliability issues of advanced charge-trapping Flash memory devices

Larcher

Padovani

2010

2010 17th IEEE International Conference on Electronics, Circuits and Systems

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“…The metal-nitride-oxide-silicon (MNOS) devices were invented in 1967 [2] and were first electrically alterable semiconductor (EAROM). This charge trapping device became another potential candidate of NVM due to its storage capability of charges in discrete traps in the nitride layer.…”

Section: Mnosmentioning

confidence: 99%

A Review of Evolution comes in Non Volatile Semiconductor memories like SONOS with the role of high k-dielectric material

Kandpal¹,

Malkani²,

Nainwal³

et al. 2014

IOSRJEN

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-SONOS type memories have many advantages of lower operating voltages, excellent endurance and compatibility with standard metal oxide semiconductor (CMOS) technology. However, data retention and operating speed are limitations in such kind of memories. This paper reviews the evolution comes in the basic architecture of non-volatile memory devices like MNOS,SNOS and SONOS with the purpose of using high kdielectric material in each layer like tunneling layer, charge-trapping layer and blocking layer. Additionally, here we discuss different dielectric materials (HfO 2 or Al 2 O 3 /oxy-nitride gate dielectrics) and their properties like bias-temperature instabilities, radiation response and annealing characteristics used in such kind of nonvolatile semiconductor memories. This will help to understand the contributions of oxide, interface and bordertrap charges in charge buildup. This literature survey can provide insight into the fundamental charge trapping properties of high-k dielectrics and help to predict the long-term radiation response and reliability of these devices.

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“…Electrons are trapped in the SiN layer and can be stored for sufficient duration for the layer to function as a nonvolatile memory. The concept of a charge-trapped nonvolatile SONOS cell was first introduced in the 1960s and initial commercialized devices were demonstrated in the early 1970s [1,2]. After conventional floating-polygate flash devices were introduced in the late 1980s, the popularity of SONOS device diminished [3].…”

Section: Introductionmentioning

confidence: 99%

Highly Scalable NAND Flash Memory Cell Design Embracing Backside Charge Storage

Кwon¹,

Park²,

Shin

2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-For highly scalable NAND flash memory applications, a compact (4F 2 /cell) nonvolatile memory architecture is proposed and investigated via threedimensional device simulations. The back-channel program/erase is conducted independently from the front-channel read operation as information is stored in the form of charge at the backside of the channel, and hence, read disturbance is avoided. The memory cell structure is essentially equivalent to that of the fully-depleted transistor, which allows a high cell read current and a steep subthreshold slope, to enable lower voltage operation in comparison with conventional NAND flash devices. To minimize memory cell disturbance during programming, a charge depletion method using appropriate biasing of a buried back-gate line that runs parallel to the bit line is introduced. This design is a new candidate for scaling NAND flash memory to sub-20 nm lateral dimensions.

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The variable threshold transistor, a new electrically-alterable, non-destructive read-only storage device

Cited by 44 publications

References 0 publications

Fundamental reliability issues of advanced charge-trapping Flash memory devices

Fundamental reliability issues of advanced charge-trapping Flash memory devices

A Review of Evolution comes in Non Volatile Semiconductor memories like SONOS with the role of high k-dielectric material

Highly Scalable NAND Flash Memory Cell Design Embracing Backside Charge Storage

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