The Vapor Pressures of Tellurium and Selenium

Brooks, LeRoy S.

doi:10.1021/ja01121a059

Cited by 131 publications

(69 citation statements)

References 2 publications

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“…However, the isotherm is very steep in this region and it is difficult to put a definite upper limit on the number of layers which one could obtain, but in no case were films thicker than 20 atoms observed. Furthermore, it may be said provisionally that we have not been able to obtain films thicker than 40 These results seem to contradict those of Kistemaker and of Long and Meyer, which yielded a film about 160 atoms thick near saturation. Our results are in better agreement with those of Jackson and co-workers.…”

Section: Discussioncontrasting

confidence: 55%

Quarterly Rept. No. 28 for March 1953 to Sponsors of the Institute for the Study of Metals

METALS¹

1953

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Section: Discussioncontrasting

confidence: 55%

Quarterly Rept. No. 28 for March 1953 to Sponsors of the Institute for the Study of Metals

METALS¹

1953

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“…[8] Above about 847 K this equation and that of Brooks [10] agree to within about 2%. Below 847 K Eq 4 gives values increasingly lower than Brooks', reaching about 15% at the melting point.…”

Section: Thermodynamic Properties Of Telluriummentioning

confidence: 77%

High Temperature Thermodynamic Properties of ZnTe(s)

Brebrick

2011

J. Phase Equilib. Diffus.

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We have gathered the partial pressure, Knudsen cell, and emf measurements on ZnTe(s) from which the Gibbs energy of formation can be calculated. Published partial pressures of diatomic tellurium have been adjusted to take account of a subsequently published third law analysis of tellurium. The equation used to calculate the total pressure from the rate of mass loss from an extensive set of Knudsen cell measurements has been corrected to give a 5% increase in total pressure and the Gibbs energy of formation has been recalculated. A high temperature heat capacity for ZnTe(s) has been selected from the published data. The Gibbs energies of formation as a function of temperature have then been fit using a third law analysis to give two essentially equally good but extreme fits. In the first, the standard enthalpy of formation agrees with the calorimetric value of 2119 kJ/mol but the standard entropy of ZnTe(s) is low by 2-3 J/mol K. In the second, the standard enthalpy of formation is more positive than the calorimetric values by about 3 kJ/mol but the standard entropy of ZnTe(s) is 82 J/mol K and close to the value from low temperature heat capacity measurements. We select values of 2119.49 kJ/mol for the standard enthalpy of formation and 78.23 J/mol K for the standard entropy.Keywords partial pressures over ZnTe(s), standard enthalpy of formation of ZnTe(s), standard entropy of ZnTe(s), thermodynamic properties of ZnTe(s), third law analysis for ZnTe(s)

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“…This model assumes that the S and Se incorporation in CIGSS is controlled by the kinetics of chemisorption of the chalcogen species and incorporation into the chalcopyrite lattice. This is justified by the following observations: (i) the evaporation pressure of S [11] and Se [12] is much greater than the vacuum during film growth so that the incorporation of S and Se into the film is controlled by its reaction with Cu, In, and Ga; (ii) since the reaction temperature is more than 300°C below the melting temperature of the four extremes of ternary chalcopyrites [13,14,15,16,17] the driving force to form the chalcopyrite phase from the vapor is sufficient with either S or Se [ 18,19,20]; and (iii) the growth rate is controlled by the fluxes of Cu, In, and Ga, and the relative compositions of the groups I and III species in the films match those of the fluxes. The solid lines in Figure 1 fitting the data for CIGSS samples were determined from the following simple equation derived from the kinetic model for chalcogen incorporation [10].…”

Section: Results: Uniform Depositionmentioning

confidence: 99%

Development of a Wide Bandgap Cell for Thin Film Tandem Solar Cells: Final Technical Report, 6 November 2003 - 5 January 2007

Shafarman¹,

McCandless²

2008

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The Vapor Pressures of Tellurium and Selenium

Cited by 131 publications

References 2 publications

Quarterly Rept. No. 28 for March 1953 to Sponsors of the Institute for the Study of Metals

Quarterly Rept. No. 28 for March 1953 to Sponsors of the Institute for the Study of Metals

High Temperature Thermodynamic Properties of ZnTe(s)

Development of a Wide Bandgap Cell for Thin Film Tandem Solar Cells: Final Technical Report, 6 November 2003 - 5 January 2007

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