The value of the unforeseen

Kalff, Floris

doi:10.1038/nnano.2016.243

Cited by 1 publication

(1 citation statement)

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“…The magnetic field reduces the thermal stability of MRAM cells and complicates the MRAM integration. Several strategies were recently pursued to break this mirror symmetry and to achieve deterministic switching without an external magnetic field: to grow the ferromagnetic layer in a special wedge form (11), to control the spin-orbit torque through crystal symmetry in WTe 2 /ferromagnet bilayers (5), to use an antiferromagnetic (AF) material to magnetically bias the ferromagnetic layer (12)(13)(14)(15), and to exploit the geometry of the device shape to control the switching (16). However, these methods either require a local intrusion into the fabrication process, or are based on solutions whose scalability and integration is problematic (AF, shapes).…”

Section: Introductionmentioning

confidence: 99%

Ultra-Fast Switching of a Free Magnetic Layer with Out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells

2018

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Continuous miniaturization of complementary metal-oxide semiconductor (CMOS) devices is one of the driving forces for the unprecedented increase of speed and performance delivered by modern integrated circuits However, a rapid increase of the stand-by power due to transistor leakages and the need to refresh the data in dynamic random access memory (DRAM) is becoming a pressing issue. The microelectronics industry is facing major challenges related to power dissipation and energy consumption, and the microprocessors' scaling will hit a power wall soon. An attractive path to mitigate the unfavorable trend of increasing power at stand-by is to introduce non-volatility in the circuits. The development of an electrically addressable non-volatile memory which combines fast operation, simple structure, and high endurance is essential to mitigate the increase of the stand-by power and to introduce instant-on architectures without the need of data initialization when going from a stand-by to an operation regime. Oxide-based resistive RAM (RRAM) possesses filamentary switching between on/off states and is thus intrinsically prone to significant resistance fluctuations in both on and off states. In addition, the endurance reported is only slightly higher than that in flash memory. For this reason, it is premature to consider RRAM at its current stage of development for digital applications. Since continuous conductance modulation is suitable for implementing analog synaptic weights, both filamentary and nonfilamentary switching RRAM types are currently intensively investigated, particularly also for neuromorphic applications [1].

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