The vacuum ultra-violet photoelectron spectrum of the SiO(X¹Σ⁺) molecule

IP determination and 1+1 REMPI spectrum of SiO at 210–220 nm in an ion trap: Implications for SiO+ ion trap loading

“…Assuming that the 17 meV depression of the IP due to the field is the extreme case and given that most molecules that we ionize will be generated under weaker fields, we can estimate that the actual IP is 11.59(1) eV. This value is within error bounds of the most reliable previous measurements [4][5][6][7]. Interestingly, the most accurate values obtained with PES[6] (11.61(1) eV) and Rydberg formula fit [5] of the n=4-16 (11.584(11) eV) disagree with each other and our measurement is halfway between those and within error bounds of both of them.…”

“…SiO+ bands were observed in 1943 [8] but at that time misidentified as SiN. Later, this misunderstanding was resolved [9] and several electronic states were mapped by means of PES [6], absorption spectroscopy [9,10] and laser-induced fluorescence (LIF) [11]. Several ab initio calculation studies predicted [12][13][14] rich excited electronic state structure of SiO + .…”

A Study of theX2Σ+andA2Π States of SiO+Using Fast-Ion-Beam Laser Spectroscopy

“…The vibrational factors the exception of the L-doubling ( q / p / 2 ) parameters for Copyright ᭧ 1998 by Academic Press S / AND A 2 P STATES OF SiO [5][6][7][8][9] , indicates that the same parameter value was used £ Å 5 through £ Å 9.…”

The VUV Absorption Spectrum of SiO: Three New Ionization Limits

“…The first concerns the photoelectron study by Colbourn et al (2), while the second details the absorption spectrum down to 700Å by Baig and Connerade (3).…”