1969
DOI: 10.1016/s0042-207x(69)91840-5
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The use of radio frequency sputter ion etching and scanning electron microscopy to study the internal structure of biological material

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Cited by 14 publications
(9 citation statements)
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“…In ion etching, ions are extracted from a glow discharge in an inert gas at low pressure and are attracted to the target surface, from which about one atom is typically knocked off by each ion-surface collision (Stuart et al, 1969). This selective removal of substrate atoms makes structural features within materials observable by scanning electron microscopy.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…In ion etching, ions are extracted from a glow discharge in an inert gas at low pressure and are attracted to the target surface, from which about one atom is typically knocked off by each ion-surface collision (Stuart et al, 1969). This selective removal of substrate atoms makes structural features within materials observable by scanning electron microscopy.…”
Section: Discussionmentioning
confidence: 99%
“…This selective removal of substrate atoms makes structural features within materials observable by scanning electron microscopy. The resistance of material components to removal by argon-ion-beam etching is related to the composition and structure ofthe material (Boyde and Stewart, 1962;Stuart et al, 1969;Vahl et al, 1972). The argon-ion bombardment method presently used for disclosing the interface between the adhesive resin and the conditioned and/or primed dentin surface was first introduced by Inokoshi et al (1990).…”
Section: Discussionmentioning
confidence: 99%
“…Stuart et al (1969) and Lewis et at. (1968) examined human erythrocytes after etching with hydrogen, oxygen, argon or nitrogen.…”
Section: Introductionmentioning
confidence: 93%
“…Most frequently however, etching is carried out with argon ions [4,9]. Under this approach the test surface is bombarded with argon ions, whereupon an atom is removed from the surface, typically through collision with an argon ion [10]. As argon etching is effective in a substratum-specific manner, structures of varying composition are removed to varying degrees by means of this procedure, which, on subsequent observation under a SEM, allows a differentiated image of the adhesive interface as compared with an unetched sample [6,11].…”
Section: Introductionmentioning
confidence: 99%