The Use of Metal-Organics in the Preparation of Semiconductor Materials

Manasevit, H. M.; Simpson, W. I.

doi:10.1149/1.2408130

Cited by 141 publications

(23 citation statements)

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“…TeH 2 was dismissed as a viable MOVPE precursor due to instability above 0°C. 36 The cadmium (Cd) and Hg remaining on the MCT surface are sufficiently volatile to evaporate and be lost from the layer and reactor via the carrier gas.…”

Section: Resultsmentioning

confidence: 99%

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

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Acceptor doping of many II-VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg 1-x Cd x Te) with arsenic is no exception. High-temperature (>400°C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II-VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.

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Section: Resultsmentioning

confidence: 99%

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

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“…During the 1960s, selective epitaxial deposition of silicon and gallium arsenide was achieved in different industrial research laboratories [23][24][25]. During the late 1960s, MOCVD emerged as a promising technique in the production of a wide range of single crystal layers of compound semiconductor materials [26][27][28][29]. During the late 1960s, MOCVD emerged as a promising technique in the production of a wide range of single crystal layers of compound semiconductor materials [26][27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Selective Area Masked Growth (Nano to Micro)

Kim¹,

Chen²,

Coleman³

2015

Handbook of Crystal Growth

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“…[57] OMVPE growth of zinc selenide has been performed traditionally with dimethylzinc (or diethylzinc) and hydrogen selenide. [58] This combination of reactants suffers from severe premature gas phase reactions, resulting in non-uniform coverage.…”

Section: Growth Of Znse By Omvpementioning

confidence: 99%