The use of Ga16Sb84 alloy for electronic phase-change memory

Chang, Chih-Chung; Chao, C. T.; Wu, Jian-Da; Yew, Tri‐Rung; Tsai, Ming-Jinn; Chin, Tsung‐Shune

doi:10.1016/j.scriptamat.2010.12.046

Cited by 20 publications

(7 citation statements)

References 22 publications

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“…In recent years, antimony (Sb)rich materials are also emerging as the primary PCMs for universal memory devices since their crystallization speed is significantly high and fulfills the requirement of lower reamorphization energy than Te-based PCMs. 10,11 In that particular subset of alloys, GaSb alloys are getting special attention due to the fact that they possess high transition temperature and the phase segregation can be stopped by having novel device architectures. 12,13 One of the simple, repeatable, and robust ways to reduce the crystallization time is to exploit the loopholes in the incubation time.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Up to now, there has been a great deal of research that is mainly focused on finding novel PCM alloys , and modifying the prototype material like Ge 2 Sb 2 Te 5 (GST) by doping − to reduce the programming time. In recent years, antimony (Sb)-rich materials are also emerging as the primary PCMs for universal memory devices since their crystallization speed is significantly high and fulfills the requirement of lower reamorphization energy than Te-based PCMs. , In that particular subset of alloys, GaSb alloys are getting special attention due to the fact that they possess high transition temperature and the phase segregation can be stopped by having novel device architectures. , …”

Section: Introductionmentioning

confidence: 99%

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Revealing the Impact of Prestructural Ordering in GaSb Thin Films

et al. 2022

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For phase change materials (PCMs) to become a viable universal memory candidate and obsolete von-Neumann architecture, materials with very high crystallization speed are needed. Moreover, introducing prestructural ordering inside the material is also being touted as one of the promising techniques to reach the speed of SRAM or further down. In this aspect, GaSb alloys are showing much promise for not only having very low crystallization times by themselves, but also showing an enormous drop in the programming time while crystallizing the reamorphized material. Here, we demonstrate how the threshold switching behavior changes for the fully amorphous film in contrast with the disordered film with nucleation sites using conductive-atomic force microscopy. It is found that the required power and programming current for memory switching with nominally stoichiometric GaSb (44:56) are 23 nW and 6.2 nA, respectively. As expected for a nucleation-oriented PCM, the deposited thin film has two voltage thresholds during the local programming process, one for conduction and another for memory switching. However, when the nucleation sites are introduced inside the disordered film, the conduction and memory switching become simultaneous. This is also found to reduce the threshold power and SET current by 93% (1.5 nW) and 91% (550 pA), respectively. Furthermore, we also reveal the origin behind this behavioral change observed between these two thin films by using high-resolution transmission electron microscopy and synchrotron radiation photoelectron spectroscopy.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Revealing the Impact of Prestructural Ordering in GaSb Thin Films

et al. 2022

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“…This material is reported to have large contrast in resistance and low difference in mass density between amorphous and crystalline phases. The crystallization temperature of stoichiometric GaSb is around 220 °C, showing better stability than amorphous Ge-Sb-Te 22–25 , with a phase-change speed of 10 ns in the recording process 26 . Normally, the crystalline phase of PCMs exhibits higher optical reflectivity and larger mass density than the amorphous phase.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties and Local Structure Evolution during Crystallization of Ga16Sb84 Alloy

Dong

Guo

Qiao

et al. 2018

Sci Rep

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Phase-change memory is one of the most promising candidates for future memory technologies. However, most of the phase-change memories are based on chalcogenides, while other families of materials for this purpose remain insufficiently studied. In this work, we investigate the optical properties and microstructure of Ga16Sb84 by an in-situ ellipsometer and X-ray diffraction. Our experimental results reveal that the Ga16Sb84 films exhibit a relatively high crystallization temperature of ~250 °C, excelling in long data retention. In addition, a large optical contrast exists between the amorphous and crystalline states, which may make it suitable for use in optical discs. Molecular dynamics simulations indicate that a unique local structure order in the amorphous and crystalline phases is responsible for the optical properties observed in the experiment. The similarity found in the short-range orders of the amorphous and crystalline phases is beneficial to better understanding the fast phase transition of phase-change memory.

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“…1(a). 19) Then the microstructures of crystalline W 0.08 (Ge 2 Sb 2 -Te 5 ) 0.92 films are further discussed by analyzing the TEM images. Figures 3(a Figure 4 reveals that the grain size of W 0.08 (Ge 2 Sb 2 Te 5 ) 0.92 thin film is about 5-30 nm over the entire film.…”

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Improved performances of Ge₂Sb₂Te₅based phase change memory by W doping

Cheng

Mao

Zhang

et al. 2014

Jpn. J. Appl. Phys.

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W-doped Ge 2 Sb 2 Te 5 materials have been investigated for phase change memory applications. W 0.08 (Ge 2 Sb 2 Te 5 ) 0.92 phase change film exhibits a higher crystallization temperature (255 °C), better data retention of 10 years at 183 °C, and higher crystalline resistance compared with traditional Ge 2 Sb 2 Te 5 . The W x (Ge 2 Sb 2 Te 5 ) 1%x films crystallize into a stable face-centered cubic phase with uniform crystal grains. Phase-change memory device based on W 0.08 (Ge 2 Sb 2 Te 5 ) 0.92 shows short operation time (10 ns) and good endurance (6 ' 10 5 cycles). W x (Ge 2 Sb 2 Te 5 ) 1%x material is a promising candidate for phase-change memory applications that require good data retention and fast operation speed.

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The use of Ga16Sb84 alloy for electronic phase-change memory

Cited by 20 publications

References 22 publications

Revealing the Impact of Prestructural Ordering in GaSb Thin Films

Revealing the Impact of Prestructural Ordering in GaSb Thin Films

Optical Properties and Local Structure Evolution during Crystallization of Ga16Sb84 Alloy

Improved performances of Ge₂Sb₂Te₅based phase change memory by W doping

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The use of Ga16Sb84 alloy for electronic phase-change memory

Cited by 20 publications

References 22 publications

Revealing the Impact of Prestructural Ordering in GaSb Thin Films

Revealing the Impact of Prestructural Ordering in GaSb Thin Films

Optical Properties and Local Structure Evolution during Crystallization of Ga16Sb84 Alloy

Improved performances of Ge2Sb2Te5based phase change memory by W doping

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Improved performances of Ge₂Sb₂Te₅based phase change memory by W doping