The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy

Surface effects on the Frenkel pair defects stability in the vicinity of the Si(001) surface

“…A number of investigations have addressed point defects and their diffusion characteristics in well-ordered or amorphous bulk materials [11,12]. In fact, point defects, such as vacancies and interstitials, are known to have a Contents lists available at ScienceDirect journal homepage: www.elsevier.com/locate/mssp Materials Science in Semiconductor Processing great influence on various structural, mechanical, electrical and optical properties of crystalline and amorphous materials.…”

Depth-dependent phase change in Gd2O3 epitaxial layers under ion irradiation

“…First, the irradiation-induced normal tensile strain that develops in the first irradiation stage, and/or the stress induced by the curvature of the Si substrate after its amorphization close to the GO/Si interface could lead to anisotropic defect mobility (see e.g. [44] and references therein), with an enhanced migration along the surface normal. Second, a chemical gradient due to intermixing at the GO-Si interface on the one hand and stoichiometric GO at the layer surface on the other hand, could also lead to defect migration along the surface normal [45].…”