The use of atomic hydrogen for low temperature oxide removal from HgCdTe

Hirsh, L. S.; Ziemer, Katherine S.; Richards‐Babb, Michelle; Stinespring, C. D.; Myers, T. H.; Colin, T.

doi:10.1007/s11664-998-0030-6

Cited by 14 publications

(13 citation statements)

References 25 publications

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“…1c). The reduction of the Te oxide by atomic H is consistent with the results of Hirsh et al 4 and also indicates that the reduction reaction is first order in H exposure. Upon complete reduction, negligible further etching of Te is observed.…”

Section: Discussionsupporting

confidence: 90%

“…This is consistent with the reaction proposed by Hirsh et al for reduction of tellurium oxide by atomic H via H 2 O formation. 4 The plot of ln(I/I 0 ) of the TeO 2 feature as a function of H + H 2 exposure time (Fig. 2b) indicates that the oxide reduction process is first order with respect to atomic H exposure time.…”

Section: Atomic H Exposure Of Unetched Hg 12x CD X Te Filmmentioning

confidence: 89%

“…2a) of as-received Hg 1Àx Cd x Te consists of two features, at 576.7 eV and 573.2 eV, corresponding to oxidized and reduced Te, respectively. 3,4,13,14 The O 1s XPS spectra (Fig. 2c) exhibits a feature at 530.9 eV, which corresponds to oxidized tellurium.…”

Section: Atomic H Exposure Of Unetched Hg 12x CD X Te Filmmentioning

confidence: 99%

“…Hirsh et al have shown that atomic hydrogen effectively reduces tellurium oxide present on as-received Hg 1Àx Cd x Te surfaces. 4,5 However changes in the surface composition and electronic structure of the ternary alloy are extremely important for subsequent CdTe deposition or other processes related to device fabrication. 3,[6][7][8] In this work we use x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) to examine the effect of atomic hydrogen on the surface of both Br/methanol-etched and as-received Hg 1Àx Cd x Te samples.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Hydrogen Free Radicals on Hg1−x Cd x Te

Wilks

Tavakoli

Kelber

2010

Journal of Elec Materi

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Section: Discussionsupporting

confidence: 90%

Section: Atomic H Exposure Of Unetched Hg 12x CD X Te Filmmentioning

confidence: 89%

Section: Atomic H Exposure Of Unetched Hg 12x CD X Te Filmmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of Hydrogen Free Radicals on Hg1−x Cd x Te

Wilks

Tavakoli

Kelber

2010

Journal of Elec Materi

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“…It has been demonstrated to be a valuable nondestructive multipurpose microscopic research tool for studying HgCdTe-related materials. [9][10][11][12][13][14][15][16][17][18][19][20][21] In this work, a Veeco D3100 scanning probe microscopy (SPM) system configured for tapping-mode operation was used for AFM measurements. A 1-X Si tapping-mode tip/ cantilever with a backside Al reflective enhancement coating was employed to obtain good signal-tonoise ratio.…”

Section: Methodsmentioning

confidence: 99%

Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Chang

Becker

Grein

et al. 2008

Journal of Elec Materi

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The surface morphology and crystallinity of HgCdTe films grown by molecular beam epitaxy (MBE) on both CdZnTe and CdTe/Si (211)B substrates were characterized using atomic force microscopy (AFM), as well as scanning (SEM) and transmission (TEM) electron microscopy. Crosshatch patterns and sandybeach-like morphologies were commonly found on MBE (211) HgCdTe epilayers grown on both CdZnTe and CdTe/Si substrates. The patterns were oriented along the 213 Â Ã , 231 Â Ã , and 011 Â Ã directions, which were associated with the intersection between the (211) growth plane and each of the eight equivalent HgCdTe slip planes. This was caused by strain-driven operation of slip in these systems with relative large Schmid factor, and was accompanied by dislocation formation as well as surface strain relief. Surface crater defects were associated with relatively high growth temperature and/or low Hg flux, whereas microtwins were associated with relatively low growth temperature and/or high Hg flux. AFM and electron microscopy were used to reveal the formation mechanisms of these defects. HgCdTe/HgCdTe superlattices with layer composition differences of less than 2% were grown by MBE on CdZnTe substrates in order to clarify the formation mechanisms of void defects. The micrographs directly revealed the spiral nature of growth, hence demonstrating that the formation of void defects could be associated with the Burton, Cabrera, and Frank (BCF) growth mode. Void defects, including microvoids and craters, were caused by screw defect clusters, which could be triggered by Te precipitates, impurities, dust, other contamination or flakes. Needle defects originated from screw defect clusters linearly aligned along the 011 Â Ã directions with opposite Burgers vector directions. They were visible in HgCdTe epilayers grown on interfacial superlattices. Hillocks were generated owing to twin growth of void or needle defects on (111) planes due to low growth temperature and the corresponding insufficient Hg movement on the growth surface. Therefore, in addition to nucleation and growth of HgCdTe in the normal two-dimensional layer growth mode, the BCF growth mode played an important role and should be taken into account during investigation of HgCdTe MBE growth mechanisms.

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Catalytic Reactivation of Industrial Oxygen Depolarized Cathodes by in situ Generation of Atomic Hydrogen

et al. 2019

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Electrocatalytically active materials on the industrial as well as on the laboratory scale may suffer from chemical instability during operation, air exposure, or storage in the electrolyte. A strategy to recover the loss of electrocatalytic activity is presented. Oxygen‐depolarized cathodes (ODC), analogous to those that are utilized in industrial brine electrolysis, are analyzed: the catalytic activity of the electrodes upon storage (4 weeks) under industrial process conditions (30 wt % NaOH, without operation) diminishes. This phenomenon occurs as a consequence of surface oxidation and pore blockage, as revealed by scanning electron microscopy, focused ion beam milling, X‐ray photoelectron spectroscopy, and Raman spectroscopy. Potentiodynamic cycling of the oxidized electrodes to highly reductive potentials and the formation of “nascent” hydrogen re‐reduces the electrode material, ultimately recovering the former catalytic activity.

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The use of atomic hydrogen for low temperature oxide removal from HgCdTe

Cited by 14 publications

References 25 publications

Effect of Hydrogen Free Radicals on Hg1−x Cd x Te

Effect of Hydrogen Free Radicals on Hg1−x Cd x Te

Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy

Catalytic Reactivation of Industrial Oxygen Depolarized Cathodes by in situ Generation of Atomic Hydrogen

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