Abstract:We have achieved spatially resolved room temperature photoluminescence (PL) from MOVPE GaAs (001) surfaces by Near-Field Scanning Optical Microscopy (NSOM). The PL intensity variation was related to the change of surface state density. Using this technique, the uniformity of surface passivation after (NH 4)2S treatment has been studied. We have performed the topography, reflection and PL measurements by NSOM as well as the topography measurements by Atomic Force Microscopy (AFM) on the as grown, etched and sul… Show more
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