The ultralow thermal conductivity and tunable thermoelectric properties of surfactant-free SnSe nanocrystals

Mir, Wasim J.; Sharma, Anirudh; Villalva, Diego Rosas; Liu, Jiakai; Haque, Azimul; Shikin, Semen; Baran, Derya

doi:10.1039/d1ra05182b

Cited by 6 publications

(5 citation statements)

References 41 publications

(72 reference statements)

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“…Figure d shows a comparison of the PF data from this work with reported values for polycrystalline SnS bulks with similar grain size to that of our SnS film and SnSe and SnS thin films deposited by low-cost techniques including spin coating, electrodeposition, thermal evaporation, and pulsed laser deposition. ,− ,,− The PF values for our SnS film deposited at 445 °C by AACVD in the temperature range of 300–520 K are at least comparable to, and in most cases higher than, the PF values reported for SnS bulks with similar grain size with the SnS film. Indeed, up to 520 K, our PF data exceeds that for all SnSe films deposited by other low-cost techniques (Figure d).…”

Section: Resultssupporting

confidence: 64%

“…Temperature dependence of (a) Seebeck coefficient ( S ), (b) electrical conductivity (σ), and (c) power factor (PF) for SnS films deposited at 397, 418, and 445 °C; (d) Comparison of the PF in this work (red stars) with reported values for SnS bulk materials with similar grain sizes to that of our SnS films and SnSe and SnS thin films (star symbols) prepared by low-cost deposition techniques. ,− ,,− …”

Section: Resultsmentioning

confidence: 91%

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Enhanced Thermoelectric Performance of Tin(II) Sulfide Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition

Liu

McNaughter

Azough

et al. 2023

ACS Appl. Energy Mater.

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Orthorhombic SnS exhibits excellent thermoelectric performance as a consequence its relatively high Seebeck coefficient and low thermal conductivity. In the present work, polycrystalline orthorhombic SnS thin films were prepared by aerosol-assisted chemical vapor deposition (AACVD) using the single source precursor dibutyl-bis(diethyldithiocarbamato)tin(IV) [Sn(C4H9)2(S2CN(C2H5)2)2]. We examined the effects of the processing parameters on the composition, microstructure, and electrical transport properties of the SnS films. Deposition temperature dominates charge transport; the room temperature electrical conductivity increased from 0.003 to 0.19 S·cm–1 as deposition temperature increased from 375 to 445 °C. Similarly, the maximum power factor (PF) increased with deposition temperature, reaching ∼0.22 μW·cm–1·K–2 at 570 K. The power factors for SnS films deposited by AACVD are higher than values from earlier work on SnS bulks and SnS/SnSe films at temperatures up to 520 K. The electronic structure and electrical transport properties of SnS were investigated using density-functional theory to provide an improved understanding of the materials performance. To the best of our knowledge, the thermal conductivity (κ) of SnS film was measured for the first time allowing the figure of merit (zT) for SnS film to be evaluated. A relatively low thermal conductivity of ∼0.41 W·m–1·K–1 was obtained at 550 K for SnS films deposited at 445 °C; the corresponding zT value was ∼0.026. The SnS films are good candidates for thermoelectric applications and AACVD is a promising technique for the preparation of high-performance thermoelectric films.

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Section: Resultssupporting

confidence: 64%

Section: Resultsmentioning

confidence: 91%

Enhanced Thermoelectric Performance of Tin(II) Sulfide Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition

Liu

McNaughter

Azough

et al. 2023

ACS Appl. Energy Mater.

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“…The thermopower of all the samples was found to be ≈30 μ VK −1 from the slope of Figure S4a–d (Supporting Information), which resulted in a power factor of 51.3 μ WK −2 m −1 , that is about 2.5 times higher than that of polyaniline/graphene nanocomposite [ 50 ] and surfactant‐free SnSe nanocrystals. [ 51 ] In single‐layer graphene, Xiao et al [ 52 ] reported the electrical conductivity in the range of 4 × 10 4 −6 × 10 4 Sm −1 . The low density of structural defects is responsible for the superior electrical conductivity and, correspondingly, lower thermopower of single‐layer graphene.…”

Section: Resultsmentioning

confidence: 99%

A Qualitative Study of Defects with Enhanced Transport Properties of Graphene Exfoliated from Gum Arabic by Rapid Sonication Method

Anadkat,

Dungani,

Pandya

et al. 2024

Physica Status Solidi (a)

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Graphene‐like materials are utilized to make electrical devices, thermal sensors, biosensors, and energy storage batteries. Herein, an efficient and cost‐effective approach is demonstrated by modulating the sonication time duration for producing a few layers of graphene using the emulsification qualities of low‐cost and environmentally friendly gum Arabic. By implementing the modified approach, the production time for graphene synthesis is significantly reduced to a short duration as compared to preliminarily reported methodologies. XRD, field‐emission scanning electron microscopy, and Raman spectroscopic results of graphene samples are presented in order to study the nature of defects. The flakes are thin enough (20 nm) to seem semitransparent under the FESEM. From the combination of both I2D/IG and FWHM (2D), a predominant formation of 3–7 graphene layers is observed. It is identified that mainly foreign adatom defects are present, with a density of ≈1010 cm−2, which results in an increasing Hall carrier concentration (≈2 × 1023 m−3) and mobility (≈27 800 cm2 Vs−1). Furthermore, graphene has a higher electrical conductivity of ≈550 S cm−1, which is far better than previously reported. This research opens the way for the mass manufacturing of simple, green, and cost‐effective graphene with better quality and physical attributes.

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“…Due to the quantum size effect, the bandgap energy was larger than that of the indirect bandgap energy of 0.80 eV in bulk SnSe. 40,41) The smaller the QD size, the stronger the quantum confinement effect. The previously reported indirect bandgap energy of 2.27 eV for the 2.5 nm SnSe QDs is slightly smaller than the value of sample F. 42) The bandgap SC1012-4 © 2022 The Japan Society of Applied Physics energies of larger crystals of samples G and H were 1.58 eV and 1.45 eV, respectively, which were smaller than the value of sample F. Since the nanorod of sample H is longer, the bandgap energy was smaller than that of sample G. The bandgap energy of sample D was 1.40 eV.…”

Section: Methodsmentioning

confidence: 99%

Study on chemical synthesis of SnSSe nanosheets and nanocrystals

Mukai

Nakayama

2022

Jpn. J. Appl. Phys.

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Two kinds of raw material combination for the hot injection method were investigated for the chemical synthesis of SnSSe nanosheets and nanocrystals, which are low-toxic optoelectronic materials. When SnSe quantum dots were synthesized by mainly using oleic acid as Se precursor solvent, the quantum dots changed from spherical to cubic as the size increased. The growth condition dependence of the nanocrystal formation process was discussed. When SnSSe nanocrystals were synthesized by mainly using trioctylphosphine as Se precursor solvent, it was found that the nanocrystal shape changed from dot to rod or sheet by reducing the proportion of S. The bandgap energy did not simply depend on the composition ratio of S but was affected by the change in the nanocrystal shape depending on the quantum confinement effect.

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The ultralow thermal conductivity and tunable thermoelectric properties of surfactant-free SnSe nanocrystals

Abstract: This work demonstrates tunable transport in surfactant free SnSe nanocrystals that retain ultralow nature of thermal conductivity.

Cited by 6 publications

References 41 publications

Enhanced Thermoelectric Performance of Tin(II) Sulfide Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition

Enhanced Thermoelectric Performance of Tin(II) Sulfide Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition

A Qualitative Study of Defects with Enhanced Transport Properties of Graphene Exfoliated from Gum Arabic by Rapid Sonication Method

Study on chemical synthesis of SnSSe nanosheets and nanocrystals

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