The ultimate CMOS device and beyond

Kuhn, Kelin J.; Avci, Uygar E.; Cappellani, A.; Giles, M.D.; Haverty, Michael; Kim, Seiyon; Kotlyar, R.; Manipatruni, Sasikanth; Nikonov, Dmitri E.; Pawashe, Chytra; Radosavljević, M.; Rios, R.; Shankar, Sadasivan; Vedula, Ravi Teja; Chau, R.; Young, Ian A.

doi:10.1109/iedm.2012.6479001

Cited by 72 publications

(54 citation statements)

References 3 publications

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“…Figure S11a shows a SEM micrograph of a "zigzag" nanostructure consisting of alternating segments of 100 nm wide Cu and 80 nm wide ferromagnetic Py (Ni 80 Fe 20 ) wires. An ac current = 10 µA is applied to the sample at = 6.56 kHz and three signals are acquired simultaneously from the tSOT during scanning: time-averaged dc and two ac signals at frequencies and 2 using two lock-in amplifiers.…”

Section: S9 Simultaneous Magnetic and Thermal Imagingmentioning

confidence: 99%

“…Landauer's principle states the lowest bound on energy dissipation in an irreversible qubit operation to be 0 = B ln 2, where B is Boltzmann's constant and is the temperature 17,18 . At = 4.2 K, 0 = 410 -23 J, several orders of magnitude below 10 -19 J of dissipation per logical operation in present day superconducting electronics and 10 -15 J in CMOS devices 19,20 . Hence the power dissipated by an ideal qubit operating at a readout rate of = 1 GHz will be as low as = 0 = 40.2 fW.…”

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confidence: 96%

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Nanoscale thermal imaging of dissipation in quantum systems

Halbertal

Cuppens

Shalom

et al. 2016

Nature

190

175

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Energy dissipation is a fundamental process governing the dynamics of physical, chemical, and biological systems. It is also one of the main characteristics distinguishing quantum and classical phenomena. In condensed matter physics, in particular, scattering mechanisms, loss of quantum information, or breakdown of topological protection are deeply rooted in the intricate details of how and where the dissipation occurs. Despite its vital importance the microscopic behavior of a system is usually not formulated in terms of dissipation because the latter is not a readily measureable quantity on the microscale. Although nanoscale thermometry is gaining much recent interest [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] , the existing thermal imaging methods lack the necessary sensitivity and are unsuitable for low temperature operation required for study of quantum systems. Here we report a superconducting quantum interference nano-thermometer device with sub 50 nm diameter that resides at the apex of a sharp pipette and provides scanning cryogenic thermal sensing with four orders of magnitude improved thermal sensitivity of below 1 µK/Hz 1/2 . The non-contact non-invasive thermometry allows thermal imaging of very low nanoscale energy dissipation down to the fundamental Landauer limit [16][17][18] of 40 fW for continuous readout of a single qubit at 1 GHz at 4.2 K. These advances enable observation of dissipation due to single electron charging of individual quantum dots in carbon nanotubes and reveal a novel dissipation mechanism due to resonant localized states in hBN encapsulated graphene, opening the door to direct imaging of nanoscale dissipation processes in quantum matter. 2 Investigation of energy dissipation on the nanoscale is of major fundamental interest for a wide range of disciplines from biological processes, through chemical reactions, to energy-efficient computing [1][2][3][4][5] . Study of dissipation mechanisms in quantum systems is of particular importance because dissipation demolishes quantum information. In order to preserve a quantum state the dissipation has to be extremely weak and hence hard to measure. As a figure of merit for detection of low power dissipation in quantum systems 16 we consider an ideal qubit operating at a typical readout frequency of 1 GHz. Landauer's principle states the lowest bound on energy dissipation in an irreversible qubit operation to be 0 = B ln 2, where B is Boltzmann's constant and is the temperature 17,18 . At = 4.2 K, 0 = 410 -23 J, several orders of magnitude below 10 -19 J of dissipation per logical operation in present day superconducting electronics and 10 -15 J in CMOS devices 19,20 . Hence the power dissipated by an ideal qubit operating at a readout rate of = 1 GHz will be as low as = 0 = 40.2 fW. The resulting temperature increase of the qubit will depend on its size and the thermal properties of the substrate. For example, a 120 × 120 nm 2 device on a 1 µm thick SiO 2 /Si substrate dissipating 40 fW will heat up by about 3 µK (Fig. 1). Suc...

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Section: S9 Simultaneous Magnetic and Thermal Imagingmentioning

confidence: 99%

mentioning

confidence: 96%

Nanoscale thermal imaging of dissipation in quantum systems

Halbertal

Cuppens

Shalom

et al. 2016

Nature

190

175

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“…28 6. In both shallow and through-wafer etching ALD-grown Al 2 O 3 hard masks have been reported to show extremely high selectivity (up to 66,000 w.r.t. Si), combined with good surface quality.…”

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confidence: 99%

“…Today, at the emergence of the 10-nm technology node and the 50 th anniversary of Moore's Law, 3D device and integration solutions are being rapidly introduced both intra-chip, e.g., Gate-All-Around, 3 vertical NAND, 4 and inter-chip, e.g., 3D Through-Silicon Vias (TSVs). 5 History of 3D etching.-Whereas the transistor design has been planar for most of its history, its periphery has been subjected to 3D design early on.…”

mentioning

confidence: 99%

Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching

Roozeboom

Bruele

Creyghton

et al. 2015

ECS J. Solid State Sci. Technol.

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Conventional (3D) etching in silicon is often based on the 'Bosch' plasma etch with alternating half-cycles of a directional Sietch and a fluorocarbon polymer passivation. Also shallow feature etching is often based on cycled processing. Likewise, ALD is time-multiplexed, with the extra benefit of half-reactions being self-limiting, thus enabling layer-by-layer growth in a cyclic process. To speed up growth rate, spatial ALD has been successfully commercialized for large-scale and high-rate deposition at atmospheric pressure. We conceived a similar spatially-divided etch concept for (high-rate) Atomic Layer Etching (ALEt). The process is converted from time-divided into spatially-divided by inserting inert gas-bearing 'curtains' that confine the reactive gases to individual injection slots in a gas injector head. By reciprocating substrates back and forth under such head one can realize the alternate etching/passivation-deposition cycles at optimized local pressures, without idle times needed for switching pressure or purging. Another improvement toward an all-spatial approach is the use of ALD-based oxide (Al 2 O 3 , SiO 2 , etc.) as passivation during, or gap-fill after etching. This approach, called spatial ALD-enabled RIE, has industrial potential in cost-effective back-endof-line and front-end-of-line processing, especially in patterning structures requiring minimum interface, line edge and fin sidewall roughness (i.e., atomic-scale fidelity with selective removal of atoms and retention of sharp corners). Today, the continuous doubling of the transistor count on planar microprocessor and memory chips in a two-year cadence has reached the point where Moore's Law (essentially an economic law) and Dennard's scaling (transistor and pitch dimensions) have approached their limits in 2D-scaling. The end of the planar device era was marked with the introduction in 2011 of the 22-nm Tri-Gate device.1,2 Figure 1 shows its design with gates surrounding the channel on three sides of vertical fins to improve gate delay.Today, at the emergence of the 10-nm technology node and the 50 th anniversary of Moore's Law, 3D device and integration solutions are being rapidly introduced both intra-chip, e.g., Gate-All-Around, 3 vertical NAND, 4 and inter-chip, e.g., 3D Through-Silicon Vias (TSVs). 5History of 3D etching.-Whereas the transistor design has been planar for most of its history, its periphery has been subjected to 3D design early on. One of the earliest 3D concepts has been the basic invention of 3D TSVs, already filed in 1958 by the famous W. Shockley, 6 cf. Fig. 2. Yet, in reality 3D Through-Silicon Via (TSV) technology took decades to accelerate the now rapidly growing stacked-chips and micro-electromechanical systems (MEMS) markets by enabling their interconnection in a 3D-integrated System-in-Package (i.e. the so-called 'More than Moore' domain). Today, the mainstream industrial technology for etching of both TSV and MEMS structures is ion-assisted etching or (Deep) Reactive Ion Etching. This method has become so ...

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“…Scaling down the CMOS technology node beyond the sub-20 nm causes the transistor to go through a transition from planar to multi-gate FETs such as bulk fin-type field effect transistors (FinFETs) because of the requirement of better gate control and suppression on short-channel effects (SCEs) [1][2][3]. In addition to the improvement on DC characteristics of individual device, however, continuously scaling not only overcomes challenges on fabrication but also suppresses systematic variation and random effects [4,5].…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

Huang¹,

Li²

2016

Nano Online

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In this work, we use an experimentally calibrated 3D quantum mechanically corrected device simulation to study the random dopant fluctuation (RDF) on DC characteristics of 16-nm-gate trapezoidal bulk fin-type field effect transistor (FinFET) devices. The fixed top-fin width, which is consistent with the realistic process by lithography, of trapezoidal bulk FinFET devices is considered in this study. For RDF on trapezoidal bulk FinFETs under the fixed top-fin width, we explore the impact of geometry and RDF on the on-/off-state current and the threshold voltage (V th ) fluctuation with respect to different channel fin angles. For the same channel doping concentration, compared with an ideal FinFET (i.e., device with a right angle of channel fin), the off-state current is large in trapezoidal bulk FinFETs with a small fin angle. Furthermore, the short-channel effect and V th variation degrade as the fin angle is getting smaller. The magnitude of the normalized σV th increases 7% when the fin angle decreases from 90°to 70°.

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The ultimate CMOS device and beyond

Cited by 72 publications

References 3 publications

Nanoscale thermal imaging of dissipation in quantum systems

Nanoscale thermal imaging of dissipation in quantum systems

Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching

Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants

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