1996
DOI: 10.1103/physrevlett.77.3041
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The Twelve-Line 1.682 eV Luminescence Center in Diamond and the Vacancy-Silicon Complex

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Cited by 281 publications
(285 citation statements)
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“…Thus, if there is an intermediate 1 E state, to be consistent with observation it must lie at an energy higher than the 1 A 1 state. It is recognized that this order is in disagreement with calculated energy levels [32]. However, there is an appeal of including a higher single 1 E state as it could lie close to the excited triplet level and the 1 A 1 close to the ground state thus accounting for the relatively fast inter-system crossing reported below.…”
Section: Nitrogen-vacancy Centermentioning
confidence: 40%
“…Thus, if there is an intermediate 1 E state, to be consistent with observation it must lie at an energy higher than the 1 A 1 state. It is recognized that this order is in disagreement with calculated energy levels [32]. However, there is an appeal of including a higher single 1 E state as it could lie close to the excited triplet level and the 1 A 1 close to the ground state thus accounting for the relatively fast inter-system crossing reported below.…”
Section: Nitrogen-vacancy Centermentioning
confidence: 40%
“…SiV centers occur only very rarely in natural diamonds, whereas they are very common impurities in synthetic CVD diamonds as a results of doping with silicon during the growth due to etching of silicon substrates, quartz reactor walls or windows in the CVD growth plasma [44][45][46] . Such an in situ creation of SiV centers has been employed to create single SiV centers in spatially isolated CVD nanodiamonds [47] or hetero-epitaxial nanoislands on iridium [48] that showed high single photon emission rates (up to 6 million counts/s [49] ).…”
Section: Siv Centersmentioning
confidence: 99%
“…In contrast to NV centers, where ZPL tuning via external fields was employed to achieve spectral overlap [16,17] , these results have very recently enabled the observation of two photoninterference from SiV centers without the need for spectral tuning [61] . The silicon atom in the SiV center is not located on a carbon lattice site but moves along the <111> direction of the diamond lattice toward the neighboring vacancy into the so called split-vacancy site (theory see: [44,62] ). Consequently, the SiV center's symmetry class is D 3d (compare NV center: C 3v ) and the ZPL is a transition between E u and E g electronic states, which both include an orbital degeneracy.…”
Section: Siv Centersmentioning
confidence: 99%
“…Intuitively, the two excitons corresponding to the excitations of the ground state of the NV 0 center ( 2 E → 2 A 1 [23]) and NV − center ( 3 A 2 → 1 A 1 ( 1 E) → 3 E) are not formally related: they correspond to two different representations of the same fundamental group C 3v [24], and are therefore physically different systems (not least of all because they correspond to systems with different electric charges). In one case the NV center has five electrons, whilst in the other the NV center has picked up an itinerant electron from the lattice and has 6 electrons, and so intuitively the dynamics of the NV 0 center and NV − center are uncoupled.…”
Section: Introductionmentioning
confidence: 99%