The tungsten bronzes and related compounds

Dickens, P.G.; Whittingham, M. S.

doi:10.1039/qr9682200030

Cited by 271 publications

(126 citation statements)

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“…Moreover, tungsten is susceptible to second-order Jahn-Teller (SOJT) distortion leading to spontaneous formation of offcentering WO 6 octahedra [2]. In particular, with WO 6 octahedral framework, the alkali metal tungsten bronzes have been intensively studied for interesting physical properties [3][4][5][6][7]. The structure is constructed by the corner-sharing WO 6 octahedra framework, where the alkali metal is located in different types of channels forming perovskite cubic, tetragonal, hexagonal and intergrowth tungsten bronzes (ITB).…”

Section: Introductionmentioning

confidence: 99%

Nanoscale building blocks in a novel lithium arsenotungsten bronze: Synthesis and characterization

Zhao

Murshed

Huq

et al. 2015

Journal of Solid State Chemistry

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a b s t r a c tWe report on a novel compound Li 3 AsW 7 O 25 obtained by solid-state reaction and characterized by diffraction and spectroscopic methods. The bronze-type compound crystallizes in the orthorhombic space group Pbca with a¼ 724.38(3) pm, b ¼1008.15(4) pm, c ¼ 4906.16(17) pm and Z¼8. The structure is built up by chains of WO 6 octahedra interconnected by AsO 4 tetrahedra and WO 6 octahedra forming a polyhedral arrangement as seen in intergrowth tungsten bronzes. The X-ray single crystal structure refinement allows solving the complex arsenotungstate framework. The powder neutron diffraction data analysis locates the lithium atoms. Thermal analysis showed that Li 3 AsW 7 O 25 is stable up to its melting at 1135(3) K followed by a decomposition at 1182(5) K. The Kubelka-Munk treatment of the UV-vis spectrum revealed a wide band gap in the range of 2.84-3.40 eV depending on the presumed electron transition type.

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Section: Introductionmentioning

confidence: 99%

Nanoscale building blocks in a novel lithium arsenotungsten bronze: Synthesis and characterization

Zhao

Murshed

Huq

et al. 2015

Journal of Solid State Chemistry

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“…3a), whose structure is similar to that of conventional three-terminal thin-film transistors composed of a transition-metal oxide layer (20-nm-thick SrCoO 2.5 ) as the active channel layer (Fig. S1), the leakage-free electrolyte incorporated in a 200-nm-thick amorphous NaTaO 3 nanopillar array film as the gate insulator, and a proton absorber (20-nm-thick amorphous WO 3 , a well-known electrochromic material [29] ) / metal bilayer as the gate electrode. This layer structure was confirmed by transmission electron microscopy (TEM) image (Fig.…”

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confidence: 95%

Reversibly Switchable Electromagnetic Device with Leakage‐Free Electrolyte

Katase

Suzuki

Ohta

2016

Adv Elect Materials

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A reversibly switchable electromagnetic oxide device is demonstrated by using a thin-film transistor structure with a newly developed "leakage-free electrolyte" as a gate insulator. The electrical and magnetic behavior of the device can be switched from antiferromagnetic insulation to ferromagnetic metal electrically under DC voltage of ±3 V at room temperature.The result provides a novel design concept for practical memory device.

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“…In that case, it becomes an electrical conductor and opaque to visible light following the valence-state change of W ion from W 6+ to W 5+ . 40) Thus, protonation/deprotonation of WO 3 is a promising candidate for the realization of simultaneous switching between colorless/colored and insulating/conducting states in a non-volatile manner, which would be ideal for use in advanced display device: e.g. such EC-MI switching device can simultaneously switch the visible-color information and electrical information, which will lead to a novel information storage/ display device.…”

Section: Electrochromic Metal-insulatormentioning

confidence: 99%

Transition-metal-oxide based functional thin-film device using leakage-free electrolyte

Katase

Ohta

2017

J. Ceram. Soc. Japan

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Using the flexible valence states of transition-metal-oxides (TMOs), the optical, electronic, and magnetic properties can be simultaneously controlled by electrochemical oxidation and reduction. Herein we review our recent works on the electrochemically switchable functional thin-film device, which has a three-terminal thin-film-transistor (TFT) structure with the TMO as an active channel layer and the liquid-leakage-free electrolyte as a gate insulator. Thin films of vanadium dioxide, tungsten trioxide, and strontium cobaltite were selected as the channel layer. By applying the gate voltage at room temperature in air, the protonation/ deprotonation or oxidation/deoxidation occurs in the TMO channels and their opto-electronic and electro-magnetic properties are reversibly switched by using the mobile ions in the solid TFT structure. The present device with liquid-leakage-free electrolyte provides a novel design concept for the development of future multifunctional switching devices based on TMOs.

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The tungsten bronzes and related compounds

Cited by 271 publications

References 0 publications

Nanoscale building blocks in a novel lithium arsenotungsten bronze: Synthesis and characterization

Nanoscale building blocks in a novel lithium arsenotungsten bronze: Synthesis and characterization

Reversibly Switchable Electromagnetic Device with Leakage‐Free Electrolyte

Transition-metal-oxide based functional thin-film device using leakage-free electrolyte

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