The Transition of Threshold Voltage Shift of Al2O3/Si3N4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

Lee, Ya-Huan; Chang, Kai-Chun; Tai, Mao-Chou; Wang, Yu-Xuan; Lin, Hsin-Ni; Yeh, Yu-Hsuan; Kuo, Hung-Ming; Tsai, Xin-Ying; Lee, Jason; Huang, I-Yu; Chang, Ting-Chang; Sze, Simon

doi:10.1109/ted.2024.3351094

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2024

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“…Y.-H. Li et al studied the mechanisms of GaN MISHEMT degradation, various negative bias voltages, and various temperatures, as well as dc negative gate bias stress (dc-NGBS) and ac negative gate bias stress (ac-NGBS). The dynamic RON is higher at higher temperatures, indicating the extracted trap energy levels in the GaN layer due to TA-TFE dominating the degradation of dc-NGBS [19].…”

Section: Resultsmentioning

confidence: 99%

Study of 1500 V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates

Liu,

Chen,

Chuang

et al. 2024

Electronics

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In this study, we demonstrate breakdown voltage at 1500 V of GaN on a QST power device. The high breakdown voltage and low current collapse performance can be attributed to the higher quality of GaN buffer layers grown on QST substrates. This is primarily due to the matched coefficient of thermal expansion (CTE) with GaN and the enhanced mechanical strength. Based on computer-aided design (TCAD) simulations, the strong electric-field-induced trap-assisted thermionic field emissions (TA-TFEs) in the GaN on QST could be eliminated in the GaN buffer. This demonstration showed the potential of GaN on QST, and promises well-controlled performance and reliability under high-power operation conditions.

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Section: Resultsmentioning

confidence: 99%