2020
DOI: 10.1039/d0cp00512f
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The total dose effect of γ-ray induced domain evolution on α-In2Se3 nanoflakes

Abstract: The domain evolution and photodetection performance degradation of α-In2Se3 nanoflakes induced by the total dose effect of 60Co γ-rays are investigated.

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Cited by 10 publications
(9 citation statements)
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“…Very recently, the surface In or Se vacancies have been introduced in the In 2 Se 3 nanoflakes by the neutron irradiation and 60 Co γ-rays, respectively, which intricately tuned the electronic structure and polarization. 28,29 Compared with the abounding studies on defect-regulated electronic and magnetic properties, the defective effect in 2D ferroelectric materials and the formed heterostructures is rarely investigated. Therefore, these open questions greatly limit the practical applications of 2D ferroelectric In 2 Se 3 , especially in high-energy p−n junctions.…”
Section: Introductionmentioning
confidence: 99%
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“…Very recently, the surface In or Se vacancies have been introduced in the In 2 Se 3 nanoflakes by the neutron irradiation and 60 Co γ-rays, respectively, which intricately tuned the electronic structure and polarization. 28,29 Compared with the abounding studies on defect-regulated electronic and magnetic properties, the defective effect in 2D ferroelectric materials and the formed heterostructures is rarely investigated. Therefore, these open questions greatly limit the practical applications of 2D ferroelectric In 2 Se 3 , especially in high-energy p−n junctions.…”
Section: Introductionmentioning
confidence: 99%
“…The localized electronic states are introduced by the single transition metal or chalcogen vacancy in transition metal dichalcogenides (TMDCs), leading to the reduced band gaps, low mobility, and p- or n-type doped conditions. , Along with the defect-tuned electronic properties, the I vacancies in the CrI 3 monolayer not only can modulate the 2D magnetism but also can induce the switchable electric polarization in the nanostructure. , For the In 2 Se 3 monolayer and its heterostructure, the doping conditions and electric dipole are very sensitive to the changes of electronic states and charge distribution, both of which are expected to be significantly regulated by the point defects. Very recently, the surface In or Se vacancies have been introduced in the In 2 Se 3 nanoflakes by the neutron irradiation and 60 Co γ-rays, respectively, which intricately tuned the electronic structure and polarization. , Compared with the abounding studies on defect-regulated electronic and magnetic properties, the defective effect in 2D ferroelectric materials and the formed heterostructures is rarely investigated. Therefore, these open questions greatly limit the practical applications of 2D ferroelectric In 2 Se 3 , especially in high-energy p–n junctions.…”
Section: Introductionmentioning
confidence: 99%
“…This phenomenon of laser power‐dependent photocurrent evolution has also been observed in α‐In 2 Se 3 . [ 65 ] Moreover, Figure S10 in the Supporting Information shows the photocurrent as a function of laser power. The power‐law exponent for nonradiative recombination in a single defect‐dependent model should be 1.…”
Section: Resultsmentioning
confidence: 99%
“…32,48 Recently, the surface In or Se vacancies have been introduced in the In 2 Se 3 nanoflakes by neutron irradiation and 60 Co γ-rays, respectively. 49,50 Here, we theoretically investigate the potential of various single transition metal atoms (TM = Fe, Co, Ni, Cu, Zn, Mo, Ru, Rh, Pd, Ag, Ir, Pt, Au) on the defective In 2 Se 3 monolayer with Se vacancy as the ferroelectric SACs toward CO oxidation. The calculated results screened out seven catalysts with singly dispersed TM atoms anchored on the 2D defective In 2 Se 3 monolayer.…”
Section: Introductionmentioning
confidence: 99%
“…In this work, based on the experimentally available 2D ferroelectrics, the In 2 Se 3 monolayer with out-of-plane polarization is chosen as the potential substrate for single-atom catalysis. For practical applications, the point defect, which comes from the material production process, is ineluctable for 2D materials , and often plays a positive role in anchoring metal atoms and improving catalytic performance. , Recently, the surface In or Se vacancies have been introduced in the In 2 Se 3 nanoflakes by neutron irradiation and 60 Co γ-rays, respectively. , Here, we theoretically investigate the potential of various single transition metal atoms (TM = Fe, Co, Ni, Cu, Zn, Mo, Ru, Rh, Pd, Ag, Ir, Pt, Au) on the defective In 2 Se 3 monolayer with Se vacancy as the ferroelectric SACs toward CO oxidation. The calculated results screened out seven catalysts with singly dispersed TM atoms anchored on the 2D defective In 2 Se 3 monolayer.…”
Section: Introductionmentioning
confidence: 99%