The thickness uniformity of films deposited by magnetron sputtering with rotation and revolution

Fu, Chunlin; Yang, Chengtao; Han, Leigang; Chen, Hongwei

doi:10.1016/j.surfcoat.2004.12.023

Cited by 37 publications

(7 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Vasilev et al theoretically reported that increasing the erosion area of the planar cylindrical target had a negligible (<1%) but positive effect on the uniformity of magnetron sputtered films. Fu et al simulated the thickness uniformity versus the parameters (rotation speed, revolution speed, and d ts ) in a radio frequency (RF) magnetron sputtering (MS) system and found that the relative deviation of film thickness distribution was less than 3% within a diameter of 100 mm, when the ratio of rotation speed to revolution speed was 5.3.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Structural Investigation of Ultra-Uniform Mo Films on a Si/SiO₂ Wafer by the Direct-Current Magnetron Sputtering Method

Cheng

Wang

et al. 2023

Crystal Growth & Design

View full text Add to dashboard Cite

As a kind of important strategic resource, molybdenum (Mo) and its alloys are widely applied in solar cells and 5G radio frequency filters. In order to improve the yield of industrial production, it is important to reduce the nonuniformity of thin-film thickness. We prepared Mo films on CMOS compatible Si/SiO2 wafers through a magnetron sputtering method and systematically investigated the effect of tuning of several process parameters on film thickness nonuniformity and other structural properties, including crystallite size (D), microstrain (ε), and dislocation density (δ). At optimized sputtering power (80 W), chamber pressure (0.4 Pa), argon flow rate (90 sccm), substrate temperature (350 °C), and target–substrate distance (9 cm), the deposited 200 nm-thick Mo films show a unified <110> preferred orientation, and the film thickness nonuniformity reaches an excellent value of 0.46%, with a surface roughness of 0.83 nm and the full width at half maximum (FWHM) of X-ray diffraction (XRD) (110) rocking curve as low as 0.47°. Our results provide efficient reference for the preparation of uniform metal films, which have potential for improving the quality and yield in filter device manufacturing.

show abstract

Section: Introductionmentioning

confidence: 99%

Preparation and Structural Investigation of Ultra-Uniform Mo Films on a Si/SiO₂ Wafer by the Direct-Current Magnetron Sputtering Method

Cheng

Wang

et al. 2023

Crystal Growth & Design

View full text Add to dashboard Cite

show abstract

“…In the past decades, relevant numerical models have been successively established to evaluate the deposition uniformity of single-target magnetron sputtering systems, possessing parallel co-axial target-substrate configuration [ 5 , 6 , 7 ], parallel off-axis target-substrate configuration [ 8 ], angular offset target-substrate configuration [ 9 ], rotated substrate [ 10 ], or stationary convex substrate [ 11 ]. These numerical models assumed that the target material in the erosion groove was uniformly etched.…”

Section: Introductionmentioning

confidence: 99%

Study on the Deposition Uniformity of Triple-Target Magnetron Co-Sputtering System: Numerical Simulation and Experiment

et al. 2022

View full text Add to dashboard Cite

The uniformity of magnetron-sputtered films can be evaluated using an analytical model whose key parameters, such as included angle cosine and distance between infinitesimal elements, are so far calculated based on targets-substrate geometric relation. This existing computation scheme is not applicable in a triple-target magnetron co-sputtering system with complex targets-substrate geometric relation. In this work, a computation method was proposed to calculate the deposition uniformity of a triple-target magnetron co-sputtering system based on the analytical model. In this method, the coordinates of the infinitesimal elements on the substrate and targets were calibrated in an identical global coordinate system via coordinate transformation, such that the key parameters of the analytical formula can be evaluated by vector computation. The effects of the target-substrate angle and target-substrate distance on the deposition uniformity of a given triple-target magnetron co-sputtering system were investigated via numerical simulation and experiment, respectively. Simulation results were consistent with experimental results. Relevant evolution mechanisms of the deposition uniformity of the co-sputtering system with the variations of target-substrate parameters were discussed in detail based on the simulation results. It is expected that this computation approach can be employed to provide theoretical guidance for the fast and economical fabrication of high-quality, large-area film and composite films.

show abstract

“…In this article, a new way to design a system where this hysteresis is decreased has been identified. On the other hand, in order to ensure uniform thickness film, some manufacturers have introduced moving substrate with rotation and revolution in the magnetron sputtering system [11]. However, no attention has been paid on the performance of the planetary substrate in reactive sputtering process, especially the effect on hysteresis width.…”

Section: Introduction mentioning

confidence: 99%

Influence of a Revolutionary Substrate on Hysteresis Effect in Reactive Sputtering Deposition of Vanadium Oxide

He¹,

Wang²,

Dong³

et al. 2016

View full text Add to dashboard Cite

Reactive sputter processes frequently exhibit stability problems. The cause of this is that these processes normally exhibit hysteresis effects in the processing curves. Eliminating or decreasing the hysteresis would significantly simplify the use of reactive sputtering processes. In this work, we present reactive sputtering deposition modeling of vanadium oxide with a revolutionary substrate, aiming to study the influence of it on hysteresis effect. Based on this modeling, the fractions of V, V2O3, VO2, V2O5 at the target surface and target voltage have been investigated as a function of reactive gas flow during the reactive sputtering. The substrate area was replaced by a new parameter of effective area of substrate As which was calculated as a sum of contributions from the substrate area at each cell of time. From the modeling results, it is suggested that the effective area of the substrate was reduced for reactive sputtering with revolutionary substrate, thus the hysteresis width would be decreased. This has been experimentally verified by reactive sputtering deposition of VOx. Besides, the fundamental explanation to this behavior as well as the experimental verification is presented.

show abstract

The thickness uniformity of films deposited by magnetron sputtering with rotation and revolution

Cited by 37 publications

References 5 publications

Preparation and Structural Investigation of Ultra-Uniform Mo Films on a Si/SiO₂ Wafer by the Direct-Current Magnetron Sputtering Method

Preparation and Structural Investigation of Ultra-Uniform Mo Films on a Si/SiO₂ Wafer by the Direct-Current Magnetron Sputtering Method

Study on the Deposition Uniformity of Triple-Target Magnetron Co-Sputtering System: Numerical Simulation and Experiment

Influence of a Revolutionary Substrate on Hysteresis Effect in Reactive Sputtering Deposition of Vanadium Oxide

Contact Info

Product

Resources

About

The thickness uniformity of films deposited by magnetron sputtering with rotation and revolution

Cited by 37 publications

References 5 publications

Preparation and Structural Investigation of Ultra-Uniform Mo Films on a Si/SiO2 Wafer by the Direct-Current Magnetron Sputtering Method

Preparation and Structural Investigation of Ultra-Uniform Mo Films on a Si/SiO2 Wafer by the Direct-Current Magnetron Sputtering Method

Study on the Deposition Uniformity of Triple-Target Magnetron Co-Sputtering System: Numerical Simulation and Experiment

Influence of a Revolutionary Substrate on Hysteresis Effect in Reactive Sputtering Deposition of Vanadium Oxide

Contact Info

Product

Resources

About

Preparation and Structural Investigation of Ultra-Uniform Mo Films on a Si/SiO₂ Wafer by the Direct-Current Magnetron Sputtering Method

Preparation and Structural Investigation of Ultra-Uniform Mo Films on a Si/SiO₂ Wafer by the Direct-Current Magnetron Sputtering Method