The thickness of native oxides on aluminum alloys and single crystals

Evertsson, Jonas; Bertram, Florian; Zhang, Fan; Rullik, Lisa; Merte, Lindsay R.; Shipilin, Mikhail; Soldemo, Markus; Ahmadi, Sareh; Vinogradov, Nikolay A.; Carlà, Francesco; Weissenrieder, Jonas; Göthelid, Mats; Pan, Jinshan; Mikkelsen, Anders; Nilsson, J-O; Lundgren, Edvin

doi:10.1016/j.apsusc.2015.05.043

Cited by 182 publications

(122 citation statements)

References 33 publications

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“…2. In XTEM high-resolution mode, the thickness of the native aluminum oxide was determined as ~3.5 nm, which is in agreement with typical values reported in literature (12,13). Figure 2.…”

Section: Methodssupporting

confidence: 88%

Low-Temperature Aluminum-Aluminum Wafer Bonding

et al. 2016

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Aluminum-aluminum thermo-compression wafer bonding is becoming increasingly important in the production of microelectromechanical systems (MEMS) devices. As the chemically highly stable aluminum oxide layer acts as a diffusion barrier between the two aluminum metallization layers, up to now the process has required bonding temperatures of 300°C or more. By using the EVG®580 ComBond® system, in which a surface treatment and subsequent wafer bonding are both performed in a high vacuum cluster, for the first time successful Al-Al wafer bonding was possible at a temperature of 100°C. The bonded interfaces of blank Al wafers and Al wafers with patterned frames were characterized using C-mode scanning acoustic microscopy (C-SAM) and transmission electron microscopy (TEM) as well as dicing yield and pull tests representative for the bonding strength. The investigations revealed areas of oxide-free, atomic contact at the Al-Al bonded interface.

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“…2. In XTEM high-resolution mode, the thickness of the native aluminum oxide was determined as ~3.5 nm, which is in agreement with typical values reported in literature (12,13). Figure 2.…”

Section: Methodssupporting

confidence: 88%

Low-Temperature Aluminum-Aluminum Wafer Bonding

et al. 2016

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“…TEM measurements revealed that the grains extend throughout the whole layer for both deposition types. Furthermore, the thickness of the native aluminum oxide is about 3 nm to 4 nm, which is in agreement with typical reported values (Hart 1956;Evertsson et al 2015).…”

Section: Methodssupporting

confidence: 79%

Surface pretreated low-temperature aluminum–aluminum wafer bonding

et al. 2017

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Aluminum-aluminum wafer bonding is becoming increasingly important in the production of CMOS microelectromechanical systems. So far, successful bonding has required extreme processing temperatures of 450°C or more, because the chemically highly stable oxide layer acts as a diffusion barrier between the two aluminum metallization layers. By using the ComBond Ò system, in which a surface treatment and subsequent wafer bonding are both performed in a high vacuum cluster, for the first time successful Al-Al wafer bonding was possible at a temperature of 150°C. The bonded interfaces were characterized using C-mode scanning acoustic microscopy and transmission electron microscopy, and featured areas of oxide-free, atomic contact.

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“…For the thin alumina layer on top of the Al antennas, the refractive index was modeled after bulk sapphire . Its thickness was assumed as 6 nm to match the literature . The sample geometry was modeled according to the characterization of the fabricated samples.…”

Section: Methodsmentioning

confidence: 99%

Advanced Optical Programming of Individual Meta‐Atoms Beyond the Effective Medium Approach

et al. 2019

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Nanometer‐thick active metasurfaces (MSs) based on phase‐change materials (PCMs) enable compact photonic components, offering adjustable functionalities for the manipulation of light, such as polarization filtering, lensing, and beam steering. Commonly, they feature multiple operation states by switching the whole PCM fully between two states of drastically different optical properties. Intermediate states of the PCM are also exploited to obtain gradual resonance shifts, which are usually uniform over the whole MS and described by effective medium response. For programmable MSs, however, the ability to selectively address and switch the PCM in individual meta‐atoms is required. Here, simultaneous control of size, position, and crystallization depth of the switched phase‐change material (PCM) volume within each meta‐atom in a proof‐of‐principle MS consisting of a PCM‐covered Al–nanorod antenna array is demonstrated. By modifying optical properties locally, amplitude and light phase can be programmed at the meta‐atom scale. As this goes beyond previous effective medium concepts, it will enable small adaptive corrections to external aberrations and fabrication errors or multiple complex functionalities programmable on the same MS.

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The thickness of native oxides on aluminum alloys and single crystals

Cited by 182 publications

References 33 publications

Low-Temperature Aluminum-Aluminum Wafer Bonding

Low-Temperature Aluminum-Aluminum Wafer Bonding

Surface pretreated low-temperature aluminum–aluminum wafer bonding

Advanced Optical Programming of Individual Meta‐Atoms Beyond the Effective Medium Approach

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