2012
DOI: 10.1063/1.3672855
|View full text |Cite
|
Sign up to set email alerts
|

The thickness, electric field, and strain effects on the magnetic anisotropy of FeCo/MgO(001) thin films: A first principles study

Abstract: The magnetic anisotropy of the FeCo/MgO(001) thin films with the effects of thickness, the electric field, and the strain of the in-plane lattice constant were investigated by first-principles calculations. The thickness dependence of the magnetic anisotropy of FeCo ultrathin films in the range of one to four monolayers was explored, and the films with one, three, and four FeCo monolayers preferred the in-plane easy axis of magnetization, while the film with two FeCo monolayers occupied the perpendicular aniso… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

1
21
0

Year Published

2013
2013
2019
2019

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 25 publications
(22 citation statements)
references
References 31 publications
1
21
0
Order By: Relevance
“…Much research has been carried out to understand and improve the properties of this voltage effect [3][4][5][6][7][8][9][10]. The mechanism can be understood as a charge accumulation/subtraction or shift of band filling at the metal/dielectric interface as a result of the application of voltage [11][12][13][14][15]. One useful technology that exploits this effect is the voltage-induced ferromagnetic resonance (FMR) technique in magnetic tunnel junctions (MTJ) [16,17], which utilizes it for microwave detection.…”
Section: Introductionmentioning
confidence: 98%
“…Much research has been carried out to understand and improve the properties of this voltage effect [3][4][5][6][7][8][9][10]. The mechanism can be understood as a charge accumulation/subtraction or shift of band filling at the metal/dielectric interface as a result of the application of voltage [11][12][13][14][15]. One useful technology that exploits this effect is the voltage-induced ferromagnetic resonance (FMR) technique in magnetic tunnel junctions (MTJ) [16,17], which utilizes it for microwave detection.…”
Section: Introductionmentioning
confidence: 98%
“…[8][9][10][11][12] Theoretical analyses highlight different possible mechanism that would lead to PMA and generally involves band hybridization, spin-orbit coupling splitting or strain. [13][14][15] Particularly, Yang et al attributed the PMA to a combination of two factors: overlap between O-pz and transition metal dz 2 orbitals, as well as degeneracy lift of out-of-plane 3d orbitals induced by spinorbit coupling. 14 In addition, He and Chen have shown that the lattice mismatch between MgO and FeCo could also induce an additional PMA.…”
mentioning
confidence: 99%
“…Interestingly, the magnetization of the system is switched from perpendicular at g FeCo ¼ 2% to in-plane orientation at g FeCo ¼ 4%. Such a strain-induced variation and magnetic switching have also been predicted in a similar model of the Ta/FeCo/MgO heterostructure by He and Chen, 23 in which the FeCo layer is not of B2-type, but in L6 0 structure with Fe and Co present on the same atomic plane.…”
Section: Resultsmentioning
confidence: 71%