The Thermally Activated Deformation of Crystalline Materials

Evans, A.G.; Rawlings, R. D.

doi:10.1002/pssb.19690340102

Cited by 369 publications

(93 citation statements)

References 58 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…An alternative locking mechanism proposed by Caillard et al [43,44,45] [35,36]. Second, the stress dependence of the activation energy described by equation (6(a)) is consistent with models describing the cross-slip screw dislocations [37].…”

Section: Examination Of Other Factors Inhibiting Dislocation Mobilitysupporting

confidence: 78%

See 1 more Smart Citation

Tensile creep of polycrystalline near-stoichiometric NiAl

Raj

2003

Materials Science and Engineering: A

View full text Add to dashboard Cite

Long term tensile creep studies were conducted on binary NiAl in the temperature range 700-1200 K with the objectives of characterizing and understanding the creep mechanisms.Inverse and normal primary creep curves were observed depending on stress and temperature. It is concluded that the primary creep of NiAl is limited by dislocation mobility. The stress exponent for creep, n, decreased from 13.9 at 700 K to 5.5 at 1200 K. The true activation energy

show abstract

Section: Examination Of Other Factors Inhibiting Dislocation Mobilitysupporting

confidence: 78%

“…(4), 6(a) and (b) at low stresses [37], while eqn. (4) also represents the general formulation for other thermally activated mechanisms [35,36]. is not significant enough to choose between the two types of stress dependencies given the scatter in the data.…”

Section: Temperature Dependence Of the Secondary Creep Ratementioning

confidence: 99%

Tensile creep of polycrystalline near-stoichiometric NiAl

Raj

2003

Materials Science and Engineering: A

View full text Add to dashboard Cite

show abstract

“…The strain rate sensitivity of the¯ow stress r is slightly higher, too. It corresponds to an activation volume [16] V kTam s r P of 1.75 nm 3 or about 75 b 3 . Here, k is Boltzmann's constant, T the absolute temperature, and m s the orientation factor.…”

Section: Discussionmentioning

confidence: 99%

“…The logarithm of the rate of the stress decrease À ' was plotted versus '. In this diagram, the strain rate sensitivity r is given by the inverse slope of the relaxation curves (see the review [16])…”

Section: Methodsmentioning

confidence: 99%

Dislocation processes during the deformation of NiAl–0.2at.%Ta

et al. 1999

View full text Add to dashboard Cite

Macroscopic compression tests and in situ straining experiments in a high-voltage electron microscope were performed on NiAl± 0.2at.%Ta at room temperature and at elevated temperatures. At room temperature in soft orientations, dislocations of ah100i Burgers vectors bow out between jogs. In contrast to pure NiAl, the dislocations move in a viscous way between the pinned con®gurations. At 475 C in a hard orientation, dislocations with ah110i Burgers vectors move in a viscous way in con®gurations strongly depending on the respective slip plane. Preferred orientations of dislocations are of mixed character, most pronounced as very straight dislocations oriented along h111i directions on {110} planes. These con®gurations cannot be explained on the basis of the existing atomistic theories. The¯ow stress is interpreted in terms of the back stress of the dislocations bowing out between jogs at room temperature, the statistical theory of solid solution hardening, and the formation of atmospheres containing Ta atoms at elevated temperatures. #

show abstract

“…To some extent, independent slip on both systems could therefore plausibly account for the fact that Finally, in figure 3 measurements of the mean free path L as a function of temperature are presented. The cation-vacancy diffusion process causes the increment of L for T 2 410 K since climb of dislocations plays a major role in the deformation behaviour of NaCl crystals in the temperature range above 425 K [14]. Due to the process of diffusion-controlled climbing the mobile dislocations are able to overcome weak obstacles, that leads to an increase of the mean distance L of the acting obstacles.…”

Section: «-(£-) =0) -(» (3mentioning

confidence: 99%

Dislocation dynamics in alkali halide single crystals investigated by nuclear spin relaxation measurements

et al. 1980

View full text Add to dashboard Cite

Résumé. -La résonance magnétique nucléaire est appliquée à l'étude de la variation de la vitesse des dislocations avec la contrainte de compression appliquée dans des cristaux d'halogénures alcalins. T lp a été mesurée en fonction du taux s de la déformation plastique. La route moyenne des dislocations mobiles a été déterminée. Nous indiquons les résultats des expériences sur de différents noyaux, sur de différentes orientations des cristaux et sur des températures différentes.Abstract. -Dislocations moving at various velocities in deforming alkali halide single crystals were studied using the technique of pulsed nuclear magnetic resonance. The spin lattice relaxation rate in the rotating frame is measured as a function of the plastic deformation rate 6. From this the mean free path of mobile dislocations can be determined. The results for different resonant nuclei, different crystal orientations with respect to the crystal axis and different temperatures are presented.

show abstract

The Thermally Activated Deformation of Crystalline Materials

Cited by 369 publications

References 58 publications

Tensile creep of polycrystalline near-stoichiometric NiAl

Tensile creep of polycrystalline near-stoichiometric NiAl

Dislocation processes during the deformation of NiAl–0.2at.%Ta

Dislocation dynamics in alkali halide single crystals investigated by nuclear spin relaxation measurements

Contact Info

Product

Resources

About