The Thermal Radiative Properties of Semiconductors

Timans, P. J.

doi:10.1007/978-94-015-8711-2_2

Cited by 54 publications

(32 citation statements)

References 216 publications

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“…Since ε bl accounts for all contributions other than the free carriers, it can be determined from the refractive index and extinction coefficient of silicon as [1].…”

Section: The Drude Model For the Optical Constants Of Doped Siliconmentioning

confidence: 99%

“…At room temperature, the scattering process is dominated by lattice scattering for lightly doped silicon and the impurity scattering becomes important for heavily doped silicon when the dopant concentration exceeds 10 18 cm -3 . Because of the relatively insignificance of impurity scattering at high temperatures, the following formula will be used to calculate the impurity scattering times: In order to obtain a better agreement with the measured near-infrared absorption coefficients for lightly doped silicon [1,7,[16][17][18], the expressions for lattice scattering are modified in the present study, as follows: …”

Section: The Drude Model For the Optical Constants Of Doped Siliconmentioning

confidence: 99%

“…Understanding the radiative properties of semiconductors is essential for the advancement of manufacturing technology, such as rapid thermal processing [1]. Because of the major heating source in rapid thermal processing is lamp radiation, knowledge of radiative properties is important for temperature control during the process.…”

Section: Introductionmentioning

confidence: 99%

“…Semitransparent crystalline silicon solar cells can improve the efficiency of solar power generation [3]. Accurate radiometric temperature measurements of silicon wafers and heat transfer analysis of rapid thermal processing furnaces require a thorough understanding of the radiative properties of the silicon wafer, whose surface may be coated with dielectric or absorbing films [1]. In fact, surface modification by coatings can significantly affect the radiative properties of a material [4].…”

Section: Introductionmentioning

confidence: 99%

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Effects of Dopant Concentrations on Thin Films with Coherent Formulation at Visible Wavelengths

Omidpanah¹

2012

IJEE

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Semiconductor materials with coatings have a wide range of applications in MEMS and NEMS. This work uses transfer-matrix method for calculating the radiative properties. Dopped silicon is used and the coherent formulation is applied. The Drude model for the optical constants of doped silicon is employed. Results showed that for the visible wavelengths, more emittance occurs in high concentrations and the reflectance decreases as the concentration increases. In these wavelengths, transmittance is negligible. Donars and acceptors act similar in visible wavelengths. The effect of wave interference can be understood by plotting the spectral properties such as reflectance or transmittance of a thin dielectric film versus the film thickness and analyzing the oscillations of properties due to constructive and destructive interferences. But this effect has not been shown at visible wavelengths. At room temperature, the scattering process is dominated by lattice scattering for lightly doped silicon and the impurity scattering becomes important for heavily doped silicon when the dopant concentration exceeds 10 18 cm -3 visible wavelengths

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“…Since ε bl accounts for all contributions other than the free carriers, it can be determined from the refractive index and extinction coefficient of silicon as [1].…”

Section: The Drude Model For the Optical Constants Of Doped Siliconmentioning

confidence: 99%

Section: The Drude Model For the Optical Constants Of Doped Siliconmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effects of Dopant Concentrations on Thin Films with Coherent Formulation at Visible Wavelengths

Omidpanah¹

2012

IJEE

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“…For example, at ϭ700 nm the silicon absorption constant is ␣ϭ3ϫ10 3 cm Ϫ1 , corresponding to an absorption length of ␣ Ϫ1 ϭ3.3 m. 1 As a consequence, typical silicon photodiodes require a large device thickness to achieve the requisite responsivity. 2 However, this can lead to a transit time limited bandwidth due to the long distance carriers have to travel.…”

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confidence: 99%