The thermal conductivity of chemical-vapor-deposited diamond films on silicon

Graebner, J. E.; Mucha, J. A.; Seibles, L.; Kammlott, G. W.

doi:10.1063/1.350981

Cited by 85 publications

(19 citation statements)

References 3 publications

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“…The effective conductivity increases rapidly with increasing layer thickness, from about 14 to 75 W m Ϫ1 K Ϫ1 for the 0.2 and 2.6 m thick layers, respectively. A similar trend was observed for lateral thermal diffusivities and conductivities in diamond within microns of the deposition interface [11][12][13]21 but the magnitude of the effective vertical conductivities measured here for a given layer thickness, which include boundary and volume resistances, are smaller than the lateral conductivities reported elsewhere for comparable layer thicknesses. Thermal diffusivities measured 13 along free-standing layers of thicknesses near0.35 and 5.5 m, for example, correspond to lateral conductivities of ϳ75 and 150 W m Ϫ1 K Ϫ1 , respectively.…”

supporting

confidence: 81%

Thermal conduction normal to diamond-silicon boundaries

Goodson

Käding

Rösner

et al. 1995

Applied Physics Letters

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Passive diamond layers fabricated using chemical vapor deposition can improve thermal conduction in electronic microstructures. The benefit of using diamond depends strongly on the thermal boundary resistance between active semiconducting regions, where heat is generated, and the diamond. Two independent experimental methods measure the total thermal resistance for conduction normal to 0.2, 0.5, and 2.6 μm thick diamond layers deposited on silicon, providing an upper bound for the effective silicon-diamond boundary resistance. The data agree with predictions that couple the local phonon scattering rate in the diamond to the grain size.

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supporting

confidence: 81%

Thermal conduction normal to diamond-silicon boundaries

Goodson

Käding

Rösner

et al. 1995

Applied Physics Letters

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“…To obtain diamond films with higher thermal conductivity (higher purity), the growth rates need to be controlled on a relatively slow level [5]. A gas mixture with a total flow of 50 sccm consisting of methane and hydrogen (2:98 vol%) was introduced with a total pressure of 2 kPa.…”

Section: Methodsmentioning

confidence: 99%

Effect of film thickness on the temperature dependence of thermal conductivity for diamond/BeO composites

Luo

Wei

et al. 2015

Ceramics International

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“…Graebner et al 1,28 reported anisotropy in the thermal conductivity of CVD diamond measured by a laser flash technique and fast infrared detection. Ono et al 29 reported thermal conductivity values of microwave CVD diamond films by making use of radiation heat transfer and radiation thermometry.…”

Section: ͑2͒mentioning

confidence: 98%

Bonding characterization, density measurement, and thermal diffusivity studies of amorphous silicon carbon nitride and boron carbon nitride thin films

Chattopadhyay

Chen

Chien

et al. 2002

Journal of Applied Physics

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Thermal diffusivity (α) of amorphous silicon carbon nitride (a-SiCxNy) and boron carbon nitride (a-BCxNy) thin films on crystalline silicon has been studied as a function of the carbon content and thickness of the films using the traveling wave technique. The thermal diffusivity showed a steady fall from ∼0.35 to about 0.15 cm2/s for a-SiCxNy films as the carbon content increased from 30 to ∼70 at. %. This decrease in thermal diffusivity was also accompanied by a decrease in the film density from 3.35 to ∼2.3 g/cm3 as a function of the carbon content of the a-SiCxNy films. In case of a-BCxNy, a peak in thermal diffusivity (0.6 cm2/s) was detected at a carbon concentration of ∼25 at. % which reduced to 0.2 cm2/s for a carbon concentration of ∼60 at. % in the films. The value of the density also showed a peak (∼2 g/cm3) at a carbon concentration of 25 at. % before decreasing in the a-BCxNy films. A study of bonding characterization revealed a dominant lower coordinated C(sp)–N phase at higher carbon concentrations that played a detrimental role in the film properties observed. A critical issue of the thickness dependence of thermal diffusivity in a layered structure of a-SiCxNy and a-BCxNy on silicon is addressed with information extracted from aluminum thin films on different substrates. An empirical model is proposed which can explain the reported thickness and substrate dependence of the thermal diffusivity data.

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The thermal conductivity of chemical-vapor-deposited diamond films on silicon

Cited by 85 publications

References 3 publications

Thermal conduction normal to diamond-silicon boundaries

Thermal conduction normal to diamond-silicon boundaries

Effect of film thickness on the temperature dependence of thermal conductivity for diamond/BeO composites

Bonding characterization, density measurement, and thermal diffusivity studies of amorphous silicon carbon nitride and boron carbon nitride thin films

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