The Theoretical Performance of GaInAsSb and GaSb Cells Versus IR Emitter Temperature in Thermophotovoltaic Systems

Tang, Liangliang; Fraas, Lewis M.; Liu, Zhuming; Xu, Chang; Chen, Xingying

doi:10.1109/ted.2016.2589264

Cited by 21 publications

(12 citation statements)

References 24 publications

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“…Furthermore, as illustrated in Figure 3, InGaAs (0.74 eV) and GaSb TPV cells recorded the highest cell efficiencies, which demonstrates the maturity of these structures. Record TPV cell efficiencies for various materials Ge [196], GaSb [3,131,134], InAs [204], InGaAs [52,103,159,163,185,186], InAsSb [205], InGaSb [200], InGaAsSb [63,198,199] and cascade InAs/GaSb/AlSb [201].…”

Section: Narrow Bandgap Materials For Tpvmentioning

confidence: 99%

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A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

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Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this global issue with supplementary generation of electrical energy. This paper presents a critical review on two dominant types of semiconductor materials, namely gallium antimonide (GaSb) and indium gallium arsenide (InGaAs), as the potential candidates for TPV cells. The advantages and drawbacks of non-epitaxy and epitaxy growth methods are well-discussed based on different semiconductor materials. In addition, this paper critically examines and summarizes the electrical cell performance of TPV cells made of GaSb, InGaAs and other narrow bandgap semiconductor materials. The cell conversion efficiency improvement in terms of structural design and architectural optimization are also comprehensively analyzed and discussed. Lastly, the practical applications, current issues and challenges of TPV cells are critically reviewed and concluded with recommendations for future research. The highlighted insights of this review will contribute to the increase in effort towards development of future TPV systems with improved cell conversion efficiency.

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Section: Narrow Bandgap Materials For Tpvmentioning

confidence: 99%

“… Record TPV cell efficiencies for various materials Ge [ 195 ], GaSb [ 3 , 131 , 134 ], InAs [ 204 ], InGaAs [ 52 , 103 , 159 , 163 , 185 , 186 ], InAsSb [ 205 ], InGaSb [ 200 ], InGaAsSb [ 63 , 198 , 199 ] and cascade InAs/GaSb/AlSb [ 201 ]. …”

Section: Narrow Bandgap Materials For Tpvmentioning

confidence: 99%

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

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“…Ga 0.84 In 0.16 As 0.14 Sb 0.86 半导体在靠近截止波长的长波区光吸收系数较低 [27] , 入射光进入材料的深度较大, 增大厚度L会增加深部光吸收产生的载流表 1 室温(300 K)下Ga 0.84 In 0.16 As 0.14 Sb 0.86 p-n结有源区的结构和物理参数 [27−29] Table 1. Structure and physical parameters of the Ga 0.84 In 0.16 As 0.14 Sb 0.86 p-n junction at room temperature (300 K) [27−29] .…”

Section: 光电特性unclassified

Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure

皇甫夏虹¹,

刘双飞²,

肖家军³

et al. 2021

Acta Phys. Sin.

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GaInAsSb quaternary alloys have attracted much interest in infrared optoelectronic applications due to their versatility in a large range of energy gaps from 0.296 eV to 0.726 eV when lattice matches to GaSb wafer. However, due to the high intrinsic carrier concentration and Auger recombination, GaInAsSb p-n junctions typically are characterized by high dark current density at room temperature and need to be operated at low temperature to obtain high optoelectronic performance. In this work, a front surface wide-bandgap semiconductor nano pillar array (NPA) and a high reflective metal back surface reflector (BSR) are designed to modulate optoelectronic performances of GaInAsSb p-n junction. The optical and optoelectronic characteristics are analyzed by the finite difference time domain simulation and the numerical solution of carrier transport equations, respectively. It shows that the NPA-BSR structure can trigger Mie-type resonance, Wood-Rayleigh anomaly effect and Fabry-Perot resonance, which can be used to trap the light efficiently in an ultrathin GaInAsSb film. Owing to these nanophotonic effects, the average light absorption of ~90% can be obtained in 1.0–2.3 μm infrared waveband for 1μm Ga0.84In0.16As0.14Sb0.86. It also shows that the Auger recombination can be suppressed with thickness decreasing which leads the carrier collection efficiency to increase and the dark current density to decrease. Theoretical results show that the carrier collection efficiency of ~99% and dark current density of ~5×10–6 A/cm2 can be obtained for the 1 μm Ga0.84In0.16As0.14Sb0.86 p-n junction. With these unique optoelectronic properties, the NPA-BSR nanophotonic structure can become a very promising method to realize the high performance ultrathin GaInAsSb infrared optoelectronic devices.

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“…Most research directed toward the improvement of STPV systems has focused on the design of selective emitters and absorbers, 25 , 36 – 39 PV cells, 40 – 46 and optical filters that reflect out-of-band photons 20 . However, optical cavities for STPV systems have rarely been investigated, regardless of the fact that they can increase photon recycling and the emitter-to-cell effective view factor 47 …”

Section: Introductionmentioning

confidence: 99%

Spheroid-based optical cavities for tunable photon recycling and emitter temperature control in robust solar thermophotovoltaic systems

Talebzadeh

O’Brien

2023

J. Photon. Energy

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.The theoretical efficiency of solar thermophotovoltaic (STPV) systems is much greater than their efficiencies achieved in practice. Optical cavities can improve the performance of STPV systems by increasing the emitter-to-PV cell view factor and by facilitating photon recycling, whereby photons are reflected back to the emitter. Photon recycling reduces losses and increases the temperature of the emitter, thereby increasing efficiency. Our study presents STPV systems comprising optical cavities in the form of oblate and prolate spheroids. The geometry of the optical cavity can be tuned to control the degree of photon recycling, emitter temperature, emission losses, and the emitter-to-PV cell effective view factor and separation distance without using complex nano- or microstructured materials or optical filters. Numerical analysis shows an optical cavity in the form of a prolate spheroid, prolate spheroid with a middle annular aperture specular reflector, and integrated oblate- and prolate-spheroid can be used to achieve efficiencies of 17.7%, 18.9%, and 22%, respectively, under solar irradiation at a concentration factor of 1500X. These robust spheroid-based optical cavities can be used to design improved STPV systems with increased durability and higher performance.

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The Theoretical Performance of GaInAsSb and GaSb Cells Versus IR Emitter Temperature in Thermophotovoltaic Systems

Cited by 21 publications

References 24 publications

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

Modulating infrared optoelectronic performance of GaInAsSb p-n junction by nanophotonic structure

Spheroid-based optical cavities for tunable photon recycling and emitter temperature control in robust solar thermophotovoltaic systems

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