Abstract:The tensoresistance at the uniaxial pressure along the crystallographic direction [100] for n-Si single crystals, which were irradiated by the different doses of gamma quants was investigated. On the basis of the theory of anisotropic scattering and experimental data of the tensoresistance the dependences of the parameter of mobility anisotropy on the uniaxial pressure for the data of single crystals are obtained. It has been shown that for unirradiated n-Si single crystals, the parameter of mobility anisotrop… Show more
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