The TeraMOS sensor for monolithic passive THz imagers

Corcos, Dan; Brouk, Igor; Malits, Maria; Svetlitza, Alexander; Stolyarova, Sara; Abramovich, Amir; Farber, E.; Bachar, N.; Elad, Danny; Nemirovsky, Y.

doi:10.1109/comcas.2011.6105883

Cited by 17 publications

(11 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Until now, the explanation for the high-frequency detection achieved by MOS field-effect transistors (FETs) [1][2][3] has been based on plasma wave detection theory [4]. When a high-frequency signal is applied between the gate and source electrodes of a MOS-FET, the model describes how THz radiation generates waves of carriers in the 2D electron gas of the inversion layer.…”

Section: Introductionmentioning

confidence: 99%

Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance

Palma

2020

Electronics

View full text Add to dashboard Cite

Metal oxide semiconductor (MOS) capacitance within field effect transistors are of great interest in terahertz (THz) imaging, as they permit high-sensitivity, high-resolution detection of chemical species and images using integrated circuit technology. High-frequency detection based on MOS technology has long been justified using a mechanism described by the plasma wave detection theory. The present study introduces a new interpretation of this effect based on the self-mixing process that occurs in the field effect depletion region, rather than that within the channel of the transistor. The proposed model formulates the THz modulation mechanisms of the charge in the potential barrier below the oxide based on the hydrodynamic semiconductor equations solved for the small-signal approximation. This approach explains the occurrence of the self-mixing process, the detection capability of the structure and, in particular, its frequency dependence. The dependence of the rectified voltage on the bias gate voltage, substrate doping, and frequency is derived, offering a new explanation for several previous experimental results. Harmonic balance simulations are presented and compared with the model results, fully validating the model’s implementation. Thus, the proposed model substantially improves the current understanding of THz rectification in semiconductors and provides new tools for the design of detectors.

show abstract

Section: Introductionmentioning

confidence: 99%

Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance

Palma

2020

Electronics

View full text Add to dashboard Cite

show abstract

“…Further, the trench is tailored to reduce electric field at the termination, and it avoids the high electric field at the outmost PN junction. The termination rim mesa, marked as M, is used to keep the mechanical stress of mesa structure in bonding process [14], so it should not be too small.…”

Section: Pixel Termination Structurementioning

confidence: 99%

An Advanced Double SOI CMOS Pixel Detector Termination With Trench Interspace

Wang

Chen

et al. 2015

IEEE Sensors J.

View full text Add to dashboard Cite

In this paper, an advanced double SOI CMOS pixel detector termination with trench interspace is investigated. The proposed termination, where horizontal structure is replaced by the vertical structure, leads to an optimal distribution of electric fields and improves the breakdown voltage. Two-dimensional and three-dimensional physical level simulation results show that the termination presents superior breakdown and charge collection characteristics compared with the conventional termination structure even under irradiation. In addition, the impact of trench interspace dimension and oxide plug structure on the breakdown voltage of pixel detector have been studied.

show abstract

“…Terahertz (THz) radiation locating between millimeter wave and far‐infrared wave is nonionizing, low power, and penetrating . In recent years, there has been an increasing interest in the potential of terahertz detection such as security screening, medical imaging, and astronomical observation due to its unique characteristics.…”

Section: Introductionmentioning

confidence: 99%

Modeling of an uncooled CMOS THz thermal detector with frequency‐selective cross‐dipole antenna and NMOS temperature sensor

Chen

Jiao

2017

Micro & Optical Tech Letters

View full text Add to dashboard Cite

form of traces by LabVIEW-based multi-shot FROG diagnostic system. compressed pulses results in the FWHM of 150 and 270 fs, respectively, with comparatively small temporal phase variations. We have also successfully acquired the grating detuned data in the form of single trace. The real profile of pulse which obtained from the femtosecond laser system retrieved by using FROG retrieval software validates the consistency of the LabVIEW-based FROG measured and retrieved data. ORCIDM. Hussain http://orcid.org/0000-0003-3142-9945

show abstract

The TeraMOS sensor for monolithic passive THz imagers

Cited by 17 publications

References 3 publications

Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance

Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance

An Advanced Double SOI CMOS Pixel Detector Termination With Trench Interspace

Modeling of an uncooled CMOS THz thermal detector with frequency‐selective cross‐dipole antenna and NMOS temperature sensor

Contact Info

Product

Resources

About