The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures

Altındal, Ş.; Parlaktürk, F.; Tataroğlu, A.; Parlak, M.; Sarmasov, S.N.; Agasiev, A. A.

doi:10.1016/j.vacuum.2008.03.001

Cited by 24 publications

(15 citation statements)

References 29 publications

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“…[11][12][13][14][15] Due to their usage in such areas, investigation of dielectric properties in MFS structures in terms of various variables is of great importance; hence, it has been realized by various researchers. 1-10 The importance of these structures is a result of their usage in various electronic devices such as solar cells, detectors, transistors, and microwave devices.…”

Section: Introductionmentioning

confidence: 99%

“…The underlying reason that this formalism has been used by many researchers 15,[19][20][21][22][23][24][25][26] is that better understanding of bulk dielectric response is realized. It is well known the features such as high dielectric constant, high Curie temperature, high breakdown strength, and peculiar switching ability [11][12][13][14][15] prove that Bi 4 Ti 3 O 12 is a well-suit material for MFS structures. 18,25,27 In this study, the ferroelectric material, which is used as interfacial layer, is bismuth titanate (Bi 4 Ti 3 O 12 ).…”

Section: Introductionmentioning

confidence: 99%

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Influence of interfacial layer thickness on frequency dependent dielectric properties and electrical conductivity in Al/Bi4Ti3O12/p-Si structures

Durmuş

Yıldırım

2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inInvestigation on dielectric properties of atomic layer deposited Al2O3 dielectric films J. Vac. Sci. Technol. A 32, 031509 (2014); 10.1116/1.4870593Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metalinsulator-semiconductor Schottky diodes structures were fabricated with different interfacial layer thickness values (10, 25, and 53 nm) and admittance measurements of the structures were carried out between 1 kHz and 1 MHz in order to investigate the influence of interfacial layer thickness on dielectric properties of these structures. For the structure with thicker interfacial layer, higher dielectric constant (e 0 ) and dielectric loss (e 00 ) values were obtained at low frequencies. At high frequencies, these parameters tend to be saturated and become almost constant. Loss tangent versus frequency plots exhibit a peak and magnitude of the peak weakens with increasing frequency and shifts toward high frequency region. The dispersion in e 0 and e 00 with varying thickness at low frequencies was ascribed to interfacial polarization. In addition, obtained e 00 values indicated higher energy dissipation in the structure with thicker interfacial layer. Admittance data of the structures were also considered in terms of modulus formalism to interpret the relaxation processes in the structures. Moreover, dc electrical conductivity values were derived using frequency dependent ac electrical conductivity of the structures.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of interfacial layer thickness on frequency dependent dielectric properties and electrical conductivity in Al/Bi4Ti3O12/p-Si structures

Durmuş

Yıldırım

2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Çünkü bu tür malzemeler; bir taraftan yarıiletken aygıtlardaki sızıntı akımı ve seri direnç (R s ) değerlerinde hatırı sayılır azaltırken diğer taraftan da kısa devre direncini (R sh ), engel yüksekliğini ve doğrultma oranını artırmaktadır. Baryum-titanyum-oksit (BTO) malzemesi de yüksek dielektrik sabiti değerine (küçük frekanslarda 200) sahip olup birçok yüzey durumunu pasife edebilme özeliğine sahiptir [1][2][3][4][5][6][7][8]. Öte yandan, kalıcı bellek uygulamalarına uyum sağlayan düşük zorlayıcı alan değeri, termal depolarizasyon problemlerini asgari düzeye indiren yüksek Curie sıcaklığı, yüksek dielektrik sabiti, yüksek kırılma dayanımı ve özgün anahtarlama davranışı yüzünden BTO bellek depolama kondansatörlerinde, optik belleklerde ve elektro-optik cihaz uygulamalarında oldukça fazla ilgi çekmiştir [5][6][7][8][9][10][11][12][13].…”

Section: Gi̇ri̇ş (Introduction)unclassified

Metal/Ferro-elektrik/Yarıiletken (Au/Bi4Ti3O12/n-Si) (MFS) Yapıların Hazırlanması ve Kompleks Dielektrik ile Elektrik Modülüsün 1 MHz için Sıcaklığa Bağlı İncelenmesi

Durmuş

2018

Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım Ve Teknoloji

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Bu çalışmada ferro-elektrik (Bi 4 Ti 3 O 12 ) ara yüzeyli metal-yarıiletken (Au/n-Si) (MS) yapılar hazırlandı ve onların kompleks dielektrik ( * ='-j") ile elektrik Modulusu (M * =M'+jM") geniş bir sıcaklık aralığında (80-320 K) 1 MHz' de detaylı olarak incelendi. Elde edilen deneysel sonuçlardan, bu parametrelerin ve elektriksel iletkenliği () hem sıcaklığa hem de voltaja oldukça bağlı olduğunu gösterdi. Hem '-V hem de "-V grafiklerin terslenim, tükenim ve yığılma bölgelerine sahip olduğu ve ' ile " değerlerindeki değişim özellikle tükenim ve yığılma bölgesinde olmaktadır. Bu değişim, tükenim bölgesinde ara yüzey durumlarının/tuzakların varlığına (D it ) ve sıcaklığa atfedilirken yığılma bölgesindeki ise seri direnç (R s ) ve ferroelektrik ara yüzey tabakanın varlığına atfedildi. Tükenim bölgesinde hem '-V hem de "-V eğrilerinde gözlenen pik (Bi 4 Ti 3 O 12 )/n-Si ara yüzeyinde ve yarıiletkenin yasak enerji bandına yerleşmiş ara yüzey durumlarının özel bir dağılımına ve sıcaklık ile dış dc elektrik alana atfedildi. ', ", M', M" ve  değerlerinin azalan sıcaklıkla azalması, düşük sıcaklıklarda yeterince serbest taşıyıcının mevcut olmadığını ve artan sıcaklıkla daha çok sayıda yükün tuzaktan iletim bandına geçmesine atfedildi.

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“…When the thickness of interfacial ferroelectric layer is small, the device behaves like a typical Schottky barrier diode which could be utilized as photodiode, solar cell, and alike. However, when the thickness is sufficiently large, it becomes difficult for the charges on metal and semiconductor to exchange, hence the charge storage feature of the MFS structure comes forward, and therefore MFS structure basically behaves like a MFS capacitor which could be utilized in ferroelectric field effect transistors [16][17][18][19]. Like the other kinds of MS structures with various interlayer materials, the *Sorumlu Yazar (Corresponding Author) e-posta : pdurmuz@gazi.edu.tr performance and reliability of a MFS structure are dependent of various factors/parameters such as the interfacial layer thickness, its homogeneity and dielectric constant, the process of surface preparation or fabrication procesess, doping concentration of donor or acceptor atoms (ND or NA), barrier formation at M/S interface and its homogeneity, density of Nss or dislocations at interlayer/semiconductor interface, series resistance (Rs) of device, as well as measurement conditions such frequency of a.c. signal, applied bias voltage and device temperature [20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors

Durmuş¹,

Bilkan²,

Yıldırım³

2017

Journal of Polytechnic

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Bu makaleye şu şekilde atıfta bulunabilirsiniz(To cite to this article): Durmuş P., Bilkan Ç. and Yıldırım M., "Effects of frequency and bias voltage on dielectric properties and electric modulus of Au/Bi4Ti3O12/n-Si capacitors", Politeknik Dergisi, 20(4): 1003-1008, (2017). Politeknik Dergisi, 2017; 20 (4) : 1003-1008 Journal of Polytechnic, 2017; 20 (4) : 1003-1008 ABSRACTIn this work, a metal-ferroelectric-semiconductor (MFS) type capacitor was fabricated and admittance measurements were held in a wide frequency range of 1 kHz-5 MHz at room temperature for the investigation of frequency and voltage dependence of complex dielectric constant, complex electric modulus and electrical conductivity of the MFS capacitor. Bismuth titanate (Bi4Ti3O12) with high dielectric constant was used as interfacial ferroelectric material and the structure of MFS capacitor was obtained as Au/Bi4Ti3O12/n-Si. Experimental results showed that dielectric, modulus and conductivity parameters are strong functions of frequency and voltage especially in depletion and accumulation regions due to the existence of surface states (Nss), series resistance (Rs), interfacial polarization and interfacial layer. It was found that Rs of the structure and interfacial ferroelectric layer are efective in accumulation region whereas surface states (Nss) and interfacial polarization are efective in depletion region. Also the changes in dielectric, modulus and conductivity parameters become considerably high particularly at low frequencies due to high values of Rs and Nss. The observed anomalous peak in voltage dependent plots of capacitance and dielectric constant was atributed to the particular density distribution of Nss, Rs and minority carrier injection. Moreover, the value of conductivity at low and intermediate frequencies is almost independent of frequency thus low frequency data was used to extract d.c. conductivity. This work showed that the use of high-dielectric Bi4Ti3O12 as ferroelectric interfacial layer in a MFS capacitor is preferable due to high values of its dielectric constant compared with traditional insulator layer materials such as SiO2 and SnO2. Therefore, a MFS capacitor with Bi4Ti3O12 interfacial layer can store more energy thanks to its high dielectric constant. Keywords: MFS capacitors, frequency and voltage dependence, surface states and interfacial polarization, dielectricproperties and electrical modulus.

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The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures

Cited by 24 publications

References 29 publications

Influence of interfacial layer thickness on frequency dependent dielectric properties and electrical conductivity in Al/Bi4Ti3O12/p-Si structures

Influence of interfacial layer thickness on frequency dependent dielectric properties and electrical conductivity in Al/Bi4Ti3O12/p-Si structures

Metal/Ferro-elektrik/Yarıiletken (Au/Bi4Ti3O12/n-Si) (MFS) Yapıların Hazırlanması ve Kompleks Dielektrik ile Elektrik Modülüsün 1 MHz için Sıcaklığa Bağlı İncelenmesi

Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors

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