The temperature-dependent growth of Fe submonolayer film on Au(001) studied by barrier height imaging using scanning tunneling microscopy

Kawagoe, Takeshi; Kotaki, Tomoyuki; Shibasaki, Toshiya; Ohmori, Yosiaki; Itoh, A.

doi:10.1016/s0039-6028(00)00824-4

Cited by 16 publications

(4 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Such a transition between different temperature regimes has already been observed for homoepitaxy and heteroepitaxy on metal surfaces [44][45][46][47]. Also in these systems, deposited atoms may remain above the surface or may insert, depending on the deposition temperature.…”

Section: B Nucleation and Growthmentioning

confidence: 61%

Growth mechanism of silicene onAg(111)determined by scanning tunneling microscopy measurements andab initiocalculations

et al. 2015

View full text Add to dashboard Cite

Scanning tunneling microscopy has been used to real-time study the growth of silicene on Ag(111) in the 200-533-K temperature range. We show that the growth mode depends strongly on the deposition temperature T. At T = 300 K and above, the formation of silicene results from the exchange between surface Ag atoms and Si atoms, which are inserted in the substrate top layer. Density functional theory calculations confirm that Si insertion is thermodynamically favored, and we propose an energetic model for explaining the observed growth processes as a function of T. For T 400 K, ordered structures are observed as soon as silicene domains are large enough. With increasing coverage, disordered and dotted phases progressively transform into stable (√ 13 × √ 13)R13.9 • and (4 × 4) structures.

show abstract

Section: B Nucleation and Growthmentioning

confidence: 61%

Growth mechanism of silicene onAg(111)determined by scanning tunneling microscopy measurements andab initiocalculations

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Local barrier height (LBH) measurement using STM enables us to estimate the local work function of metal [28,29] and semiconductor [30][31][32] surfaces. Several research groups have applied LBH measurement to alkali metals [33][34][35] and oxygen atoms [36,37] deposited on semiconductor surfaces, and found that charge transfer occurred between the adsorbates and substrates.…”

Section: Scanning Tunneling Microscopymentioning

confidence: 99%

Electronic structures of Au supported on TiO2

Okazaki

Ichikawa

Maeda

et al. 2005

Applied Catalysis A: General

View full text Add to dashboard Cite

“…Nevertheless, the diffusion is enhanced as the temperature is increased. The presence of defects like island boundaries in our granular films (see figure 2(a)) hints at the possibility of Au-segregation [24]. We cannot rule out that also in the case of thinner films (e.g.…”

Section: Discussionmentioning

confidence: 86%

Au-induced perpendicular magnetization in Fe films grown on Si(001)

Zavaliche

Wulfhekel

Przybylski

et al. 2003

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

We report on Fe films grown on Au-buffered Si(001) showing perpendicular magnetization at ambient temperatures. The in-plane magnetization in ultra-thin Fe films grown at 150 K reorients irreversibly out-of-plane as a result of annealing close to room temperature. A Au cap layer which is expected to segregate to the top of the Fe film may be responsible for this behaviour. This hypothesis is based on the observation of an in-plane to out-of-plane reorientation of magnetization upon the growth of an ultra-thin Au cap layer on a slightly thicker Fe film. The origin of such a strong out-of-plane anisotropy of Fe induced by Au is discussed.

show abstract

The temperature-dependent growth of Fe submonolayer film on Au(001) studied by barrier height imaging using scanning tunneling microscopy

Cited by 16 publications

References 28 publications

Growth mechanism of silicene onAg(111)determined by scanning tunneling microscopy measurements andab initiocalculations

Growth mechanism of silicene onAg(111)determined by scanning tunneling microscopy measurements andab initiocalculations

Electronic structures of Au supported on TiO2

Au-induced perpendicular magnetization in Fe films grown on Si(001)

Contact Info

Product

Resources

About