The temperature dependence on the electrical properties of dysprosium oxide deposited on p-Si substrate

The investigation of the complex dielectric and electric modulus of Al/Mg2Si/p-Si Schottky diode and its AC electrical conductivity in a wide frequency range

“…Hence, dielectric constant increases due to such behavior of space charges at low frequencies [27][28][29][30][31][32].…”

Capacitance–conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3interfacial layer

“…Thus, it can be said that the correction for the series resistance is particularly important in conductance measurements. Furthermore, the values of dielectric loss tangent and ac conductivity strongly depend on applied voltage and the thickness of the interfacial oxide layer [1][2][3][14][15][16][17][18][19][20][21][22][23]. Moreover, the low value of dielectric constant could be due to the formation of the native oxides related to Ga and As during devices fabrication processes.…”

“…Therefore, the SiO 2 must be replaced with other gate dielectrics [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24], that is, the reduction of gate dimensions requires decreasing oxide thickness to prevent the short channel effect and therefore the undesirable gate leakage current is substantial and increases exponentially with decreasing thickness. This calls for other dielectrics with much higher dielectric constants, that is, the high-κ metallic gate oxides which allow maintenance of the gate oxide capacitance needed for reducing short channel effects [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24]. Wu and colleagues have reported [10] that the atomic layer deposition (ALD) method is the most widely used technique in spite of the fact that other methods have also led to attractive results, and that the ALD has improved the interface quality and reduced the defects density in high-κ films.…”

“…Al 2 O 3 is an attractive candidate for the high-κ material; it has a dielectric constant of 8.6 and a wide bandgap of about 6.6 eV (for the amorphous oxide typical of ALD-grown layers). Titanium is commonly used as a standard gate metal in the fabrication of GaAs field effect transistors (FET) and MESFET since it has good adhesion and is stable against inter-diffusion and compound formation and has good electrical properties at room temperature and elevated temperatures [23,24].…”

Some physical investigations on In2S3:Sn sprayed thin film

“…At low frequencies, a plateau appears for each temperature and reveals low frequency dispersion phenomena. The origin of the frequency-dependence of conductance lies in the relaxation phenomena arising due to mobile charge carriers [57].…”