The temperature dependence on the electrical properties of dysprosium oxide deposited on n-porous GaAs

Saghrouni, H.; Jomni, S.; Cherif, A.; Belgacem, Walid; Béji, Lotfi

doi:10.1016/j.jallcom.2016.03.078

Cited by 10 publications

(4 citation statements)

References 60 publications

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“…38,39 The high dielectric constant, thermodynamic strength, high band energy gap, sputtering power, high power density, and longevity have immensely favored REOs as a suitable dopant for various electronic devices. 31,40,41 They have also been used in the development of electrochemical sensors (i.e., a nanocomposites-based pHsensitive sensor for nitrite determination 42 ) and detectors (i.e., nanosensor for toxins detection 43 ) and electronic devices (i.e., ultrathin films with a high dielectric constant, k 26,44 ). The heat treatment is common in REOs-doped phosphors applications.…”

Section: An Overview Of Reos and Their Applicationsmentioning

confidence: 99%

“…The optoelectrical properties of sesquioxide-synthesized nanocomposites are, therefore, a remarkable addition in novel humidity sensors − for ambient humidity monitoring. The nanocrystalline structures and high photoluminescence properties have enhanced the use of R 2 O 3 -synthesized nanoparticles as an attractive material in novel biosensing applications of the medical sector. ,− Their unique traits have also been employed in a wide variety of industrial and consumer electronic device applications encompassing memory devices, ,− metal oxide semiconductors (MOSs), ,,, dielectric material devices, − highly efficient capacitors, − to energy storage devices. , The high dielectric constant, thermodynamic strength, high band energy gap, sputtering power, high power density, and longevity have immensely favored REOs as a suitable dopant for various electronic devices. ,, …”

Section: An Overview Of Reos and Their Applicationsmentioning

confidence: 99%

See 1 more Smart Citation

Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

Hossain

Ahmed

Khan

et al. 2021

ACS Appl. Electron. Mater.

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Rare earth oxides (REOs) are deemed important from both industrial implementation and research insight perspectives. One of the most conspicuous attributes of REOs is sensing, which contributes significantly to the development of diversified and robust systems of sensors and detector devices. However, there has not been any organized review that has pointed out critical insights from the sensor, detector, and electronic device perspectives that can invoke further studies to investigate the prospective and commercially relevant areas to date. To address this limitation, this review undertakes a focused report approach. From this concise yet comprehensive review, it has been prominent that the most significant contributions to the sensing and detecting fields by the REOs are in electrochemical, temperature, humidity, radiation, gas, and biosensors. Moreover, in terms of electronic device development, REOs have had a significant impact on memory devices, metal oxide semiconductors, dielectric materials, capacitors, energy storage devices, and so on. Furthermore, one of the key findings of the study is that the REOs have flexible doping (e.g., Er3+, Yb3+, Y3+, etc.) capability combined with other host materials such as HfO2 film, SiO2 stacks, TiO2, SnO2 nanostructures, etc., which will likely make REO-based electrochemical sensor and biosensor development the most promising sector in the coming years. Despite the impressive aspects, biocompatibility issues in several biological and biomedical systems along with the hygroscopic nature of REOs in electronic devices remain as concerns. However, these issues can be addressed by the advancement of intricate technologies such as targeted manipulation of the electronic configuration of REOs, multifarious doping experiments to obtain alternative mechanisms, etc. to obtain superior biocompatibility, and device development systems that are noninvasive to the environment. From the commercialization front, memory devices and energy storage devices will be the focusing points for large-scale investors due to improved mechanical (i.e., Young’s modulus, intrinsic stress, etc.) and electrical (i.e., high dielectric constant, resistivity, relative permittivity, etc.) properties, while REO-based metal oxide semiconductor and capacitor development is likely to be research-oriented for the next few years before making the eventual move to futuristic applications at a large industrial scale. In short, this review reports a substantial number of relevant studies that will pave the way for further experimental and computational investigations on REOs and their sensor, detector, and electronic device aspects.

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Section: An Overview Of Reos and Their Applicationsmentioning

confidence: 99%

Section: An Overview Of Reos and Their Applicationsmentioning

confidence: 99%

Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

Hossain

Ahmed

Khan

et al. 2021

ACS Appl. Electron. Mater.

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“…Recently, rare-earth metal oxides (REOs) [19][20][21][22] have been extensively investigated as alternative gate dielectric material for future MOS-based device applications. Among the REOs, dysprosium oxide (Dy 2 O 3 ) has the greatest potential as a gate dielectric materials to replace the SiO 2 gate dielectric and improve device performance due to the its unique properties including the high relative permittivity (∼13) [23], large band gap (4.9) [24], sufficient band offset values [25] and good thermodynamic stability with silicon [26].…”

Section: Introductionmentioning

confidence: 99%

A detailed study on frequency dependent electrical characteristics of MOS capacitors with dysprosium oxide gate dielectrics

Kaya¹,

Yılmaz²

2019

Semicond. Sci. Technol.

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Frequency dependent electrical characteristics of Al/Dy 2 O 3 /p-Si/Ag MOS capacitors have been systematically investigated incorporating interfacial chemical structures of the capacitors to specify where interface state signals arise from. The results show that capacitance (C) increases with decreasing in the applied voltage frequency due to the response time dependency of the interface states. Conductance (G) curves have a single peak at the relatively high frequencies as expected. Interestingly, the G curves exhibit two distinct peaks at 400 kHz and lower frequencies. These G peaks are associated with acceptor-like interface (D it,ac ) and donor-like interface (D it,dn ) states. Electrochemical analysis has also depicted that non-stoichiometric DySiO x and SiO x bonds are present at the interface between Dy 2 O 3 /Si gate stack. Owing to interactions between mobile charge carriers and possible defect sites present at the DySiO x and SiO x , the D it,ac and D it,dn signals have been observed at G curves. In addition, the C hysteresis loop widths decrease with decreasing in the voltage frequencies due to opposite polarity and response time dependencies of the D it,ac and D it,dn states. The oxide, interface and border trap densities of capacitors exhibit slight frequency variations and their orders are comparable with device used in the state of the art microelectronics technologies. On the other hand, barrier potential varies from 0.97 eV to 1.136 eV depending on the voltage frequencies. Leakage current density was found to be 1.61×10 −7 Acm −2 at −1 V and Fowler-Nordheim tunneling mechanism dominates the leakage current conduction. Considering to these results, it can be concluded that the Dy 2 O 3 shows promising dielectric and insulating behavior for the application in future microelectronics technology.

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“…Considering III-V semiconductors, especially, gallium arsenide (GaAs) is the most important representative due to its use in high-efficiency solar cell [4]. In this regard, GaAs has been subject of intensive research in both experimentally and theoretically to understand the structural, mechanical, thermal and electronic properties and demonstrate a highly efficient properties of this material [5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

MOLECULAR DYNAMICS STUDY ON THE STRUCTURAL, THERMAL AND ENERGETIC PROPERTIES OF GaAs NANOPARTICLES

Kurban¹

2018

Anadolu University Journal of Science and Technology-a Applied Sciences and Engineering

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In this work, the structural and energetic properties of GaAs nanoparticles (NPs) are investigated using the bond order potential (BOP) based on modern classical molecular dynamics (MD) method. All MD simulations are performed by means of LAMMPS (large-scale atomic/molecular massively parallel simulator). Some physical properties such as variation of potential energy depending on temperature, order parameter, coordination number in terms of probability distribution and radial distribution function (RDF) are searched. The heat capacity () calculation is also performed as depending on temperature using a nonequilibrated molecular dynamics simulation strategy. The tendency of Ga and As atoms inside the core has been observed under temperature increase. As atoms have significant effect on the stability of GaAs NPs. Temperature dependence of these physical properties was obtained. The calculated physical properties are found to be sensitive to temperature.

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The temperature dependence on the electrical properties of dysprosium oxide deposited on n-porous GaAs

Cited by 10 publications

References 60 publications

Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

A detailed study on frequency dependent electrical characteristics of MOS capacitors with dysprosium oxide gate dielectrics

MOLECULAR DYNAMICS STUDY ON THE STRUCTURAL, THERMAL AND ENERGETIC PROPERTIES OF GaAs NANOPARTICLES

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