The temperature dependence of the D° and D+ capture cross-section in a-Si

Spear, W. E.; Hourd, Andrew C.; Kinmond, S.

doi:10.1016/0022-3093(85)90731-8

Cited by 19 publications

(2 citation statements)

References 10 publications

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“…7 cannot be attributed only to the charge-state of the dangling bonds. Indeed, the capture cross sections of the positively charged ( n ϩ ) and neutral ( n 0 ) Si dangling bonds for electrons has been found from transient photoconductivity experiments 28,29 to differ only by about a factor of 5-30, namely, it is n ϩ / n 0 ϭ5Ϫ30. In order to overcome the above difficulties and clarify the character of the probing defects, their local bonding configuration must be taken into account as well.…”

Section: Discussionmentioning

confidence: 98%

Various defect states ina-Si:H studied by modulated photoconductivity spectroscopy

Kounavis

2002

Phys. Rev. B

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Various kinds of defect state distributions dominating electron trapping and recombination in a-Si:H films from different laboratories are studied by analyzing modulated photocurrent measurements obtained by varying the frequency or the bias light level. The characteristic features of the experimental modulated photocurrent spectra are compared with those predicted theoretically and a clear physical meaning is obtained. Two kinds of defect states are extracted directly from the spectra without prior assumptions about the form of the density of states. The energetic distributions of these defect states at the quasi-Fermi level and above it are calculated and their magnitude was found to differ by about an order of magnitude, while their capture coefficients differ by as much as 2-3 orders of magnitude. We assign the two kinds of defects to silicon dangling bonds with three backbonded silicon atoms and silicon dangling bonds where one backbond is substituted by hydrogen.

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Section: Discussionmentioning

confidence: 98%

Various defect states ina-Si:H studied by modulated photoconductivity spectroscopy

Kounavis

2002

Phys. Rev. B

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“…From the experiment the charge states of the measured defects can not be determined explicitly, but some arguments supporting our interpretation abo¥ shoulg be 2 outlined: (1) The observed capture cross-section of 10 -10-cm is usually attributed to positively charged DBs [9]. (2) Charge neutrality in undoped samples requires positive states above Ef if Ef is located above the D-states.…”

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confidence: 82%

Defect Distribution and Defect Kinetics in Undoped and Boron-Doped A-Si:H Investigated by Modulated Photocurrents

Schumm

Bauer

1989

MRS Proc.

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Gap state profiles in a-Si:H around the Fermi energy have been determined by phase shift analysis of modulated photocurrents. Measurements on different samples in various light-soaked and annealed states show a general strong correlation of the defect structure with the Fermi level position, with a minimum in the DOS at E and a peak above Ef. A model of the defect structure involving a peak of D+ states above Ef is outlined that accounts for the observed correlations.

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